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Selected Papers from TIKI ICICE 2018
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Selected Papers from TIKI ICICE 2018

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 March 2019) | Viewed by 10787

Special Issue Editors

Prof. Dr. Shoou-Jinn Chang

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Guest Editor
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Interests: optical and electronic devices; semi-conductive materials; nanotechnology
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Sheng-Joue Young

E-Mail Website
Guest Editor
Department of Electronic Engineering, National United University, Miaoli City 36063, Taiwan
Interests: semiconductor physics; optoelectronic devices; nanotechnology
Special Issues, Collections and Topics in MDPI journals
Dr. Stephen D. Prior

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Advisory Board Member
Aeronautics, Astronautics and Computational Engineering, University of Southampton, Southampton SO16 7QF, UK
Interests: microsystem design; nanotechnology
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The 2018 International Conference on Innovation, Communication, and Engineering (TIKI ICICE 2018, http://2018.icice.asia/) will be held in Hangzhou, Zhejiang Province, P. R. China on November 9–14, 2018; it will provide a unified communication platform for material topics. Scientists from all over the world actively want to discover new advanced materials in electrical and mechanical engineering. In recent years, applications of advanced materials have been in highly developing fields, notably, in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. Therefore, the fields of electrical and mechanical materials have always been popular research areas. The scopes of TIKI ICICE 2018 not only encompass material sizes at the nanoscale, but also in various dimensions, where the onset of size-dependent phenomena usually enables novel applications.

This Special Issue selects excellent papers from TIKI ICICE 2018 and covers the following scopes, including fundamental and advanced materials of electrical and mechanical engineering; their synthesis and engineering; their application in optical sensors, magnetic, acoustic, and thermal transduction; their integration with many elements; the design of electrical or mechanical devices; the evaluation of various performances; and the exploration of their broad applications in industry, environmental control, material analysis, etc. We invite investigators to contribute original research articles, as well as review articles, to this Special Issue.

Potential topics include, but are not limited to, the following:

  • Developments of advanced materials for new electrical and optical properties
  • Nanomaterials for preparation and applications
  • Combinatorial methods of advanced materials for mechanical design and optimization
  • Advanced materials for preparation and applications
  • Subjects related to electronic thin films and coating technology
  • The synthesis engineering of advanced materials
  • Advanced materials in mechatronics applications

Schedule:

Manuscript Due: 31 March 2019
First Round of Reviews: 30 April 2019
Second Round of Reviews: 31 May 2019
Acceptance of Final papers and Publication: 30 June 2019

Prof. Dr. Shoou-Jinn Chang
Prof. Dr. Sheng-Joue Young
Dr. Stephen D. Prior
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Advanced materials
  • Microelectronic devices
  • Optical sensors

Published Papers (3 papers)

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Research

9 pages, 4302 KiB  
Article
Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga
by Kuan-Yu Chen, Chih-Chiang Yang, Yan-Kuin Su, Zi-Hao Wang and Hsin-Chieh Yu
Materials 2019, 12(5), 737; https://doi.org/10.3390/ma12050737 - 04 Mar 2019
Cited by 15 | Viewed by 3548
Abstract
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, [...] Read more.
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 106, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 104. IGO TFTs may act as photodetectors according to the results obtained for optical properties. Full article
(This article belongs to the Special Issue Selected Papers from TIKI ICICE 2018)
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14 pages, 6874 KiB  
Article
Temperature Field Numerical Analysis Mode and Verification of Quenching Heat Treatment Using Carbon Steel in Rotating Laser Scanning
by Tsung-Pin Hung, Chao-Ming Hsu, Hsiu-An Tsai, Shuo-Ching Chen and Zong-Rong Liu
Materials 2019, 12(3), 534; https://doi.org/10.3390/ma12030534 - 11 Feb 2019
Cited by 9 | Viewed by 2872
Abstract
Temperature history and hardening depth are experimentally characterized in the rotational laser hardening process for an AISI 1045 medium carbon steel specimen. A three-dimensional finite element model is proposed to predict the temperature field distribution and hardening zone area. The laser temperature field [...] Read more.
Temperature history and hardening depth are experimentally characterized in the rotational laser hardening process for an AISI 1045 medium carbon steel specimen. A three-dimensional finite element model is proposed to predict the temperature field distribution and hardening zone area. The laser temperature field is set up for an average distribution and scanned along a circular path. Linear motion also takes place alongside rotation. The prediction of hardening area can be increased by increasing the rotational radius, which in turn raises the processing efficiency. A good agreement is found between the experimental characterized hardness value and metallographic composition. The uniformity of the hardening area decreases with increasing laser scanning speed. The increased laser power input could help to expand the hardening depth. Full article
(This article belongs to the Special Issue Selected Papers from TIKI ICICE 2018)
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10 pages, 4213 KiB  
Article
Structure and Properties of Single-Layer MoS2 for Nano-Photoelectric Devices
by Jiaying Jian, Honglong Chang and Tao Xu
Materials 2019, 12(2), 198; https://doi.org/10.3390/ma12020198 - 09 Jan 2019
Cited by 23 | Viewed by 3857
Abstract
To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and layers of an MoS [...] Read more.
To meet the need for preparing high-performance nano-optoelectronic devices based on single-layer MoS2, the effects of the heating method (one-step or two-step heating) and the temperature of the MoO3 source on the morphology, size, structure, and layers of an MoS2 crystal grown on a sapphire substrate using chemical vapor deposition are studied in this paper. The results show that MoS2 prepared by two-step heating (the heating of the S source starts when the temperature of the MoO3 source rises to 837 K) is superior over that of one-step heating (MoO3 and S are heated at the same time). One-step heating tends to form a mixture of MoO2 and MoS2. Neither too low nor too high of a heating temperature of MoO3 source is conducive to the formation of MoS2. When the temperature of MoO3 source is in the range of 1073 K to 1098 K, the size of MoS2 increases with the rise in temperature. A uniform large-sized triangle with a side length of 100 μm is obtained when the heating temperature of MoO3 is 1098 K. The triangular MoS2 crystals grown by the two-step heating method have a single-layer structure. Full article
(This article belongs to the Special Issue Selected Papers from TIKI ICICE 2018)
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