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Experimental Mechanics of Micro-Nano Scale Spectroscopy

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Mechanics of Materials".

Deadline for manuscript submissions: closed (20 November 2022) | Viewed by 4042

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Special Issue Editor

Prof. Dr. Wei Qiu

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Guest Editor

Department of Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, China
Interests: Raman-mechanical theory; micro-nano experimental mechanics; mechanics of nanomaterials and structures; optical mechanics; semiconductor material; microscopic Raman spectroscopy; interfacial mechanical property; thermal barrier coating; fluorescence spectrum

Special Issue Information

Dear Colleagues,

The experimental investigation on mechanical behavior around various new materials and structures is a hot field in materials science and engineering, which requires the continuous development of new methods and technologies of experimental mechanics. In recent years, micro and nano spectral technologies, such as micro-Raman spectroscopy and micro fluorescence spectroscopy, have seen many influential achievements in frontier applications of mechanical studies. A new sub-branch of experimental mechanics is forming, namely, spectral experimental mechanics. This Special Issue intends to gather the recent results of spectral technologies in the methodological research of experimental mechanics and the frontier field of mechanics at the micro and nano scale. We look forward to contributions including, but not limited to, the following fields.

Experimental theory of spectral–mechanical characterization;
New methods or techniques of mechanical measurement using spectroscopy;
New development of spectral instruments for the experimental study of mechanics;
Application of spectral analysis on the mechanical behaviors of advanced materials, such as:
- Measurement of multi-scale mechanical parameters of micro and nano materials;
- Interfacial behaviors of graphene, transition metal sulfide, phosphorene, and other two-dimensional materials and their heterostructures;
- Strain engineering of new-generation semiconductor structures;
- Phenomena of mechanical–electrochemical coupling of new energy structures;
- Internal damage of advanced composites and coating structures.

Prof. Dr. Wei Qiu
Guest Editor

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Keywords

experimental mechanics
spectroscopy
micro–nano scale
stress
strain
interface
Raman
fluorescence

Published Papers (3 papers)

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15 pages, 4378 KiB

Open AccessArticle

Characterization of the Internal Stress Evolution of an EB-PVD Thermal Barrier Coating during a Long-Term Thermal Cycling

by Zhen Zhen, Chuan Qu and Donghui Fu

Materials 2023, 16(7), 2910; https://doi.org/10.3390/ma16072910 - 06 Apr 2023

Cited by 1 | Viewed by 1185

Abstract

Electron beam physical vapour deposition (EB-PVD) technology is a standard industrial method for the preparation of a thermal barrier coating (TBC) deposition on aeroengines. The internal stress of EB-PVD TBCs, including stress inside the top coating (TC) and thermal oxidation stress during long-term service is one of the key reasons for thermal barrier failures. However, research on the synergistic characterization of the internal stress of EB-PVD TBCs is still lacking. In this work, the stress inside the TC layer and the thermal oxidation stress of EB-PVD TBC during long-term thermal cycles were synergistically detected, combining Cr³⁺-PLPS and THz-TDS technologies. Based on a self-built THz-TDS system, stress-THz coefficients c₁ and c₂ of the EB-PVD TBC, which are the core parameters for stress characterization, were calibrated for the first time. According to experimental results, the evolution law of the internal stress of the TC layer was similar to that of the TGO stress, which were interrelated and influenced by each other. In addition, the internal stress of the TC layer was less than that of the TGO stress due to the columnar crystal microstructure of EB-PVD TBCs. Full article

(This article belongs to the Special Issue Experimental Mechanics of Micro-Nano Scale Spectroscopy)

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13 pages, 3698 KiB

Open AccessEditor’s ChoiceArticle

Raman Characterization of the In-Plane Stress Tensor of Gallium Nitride

by Bowen Han, Mingyuan Sun, Ying Chang, Saisai He, Yuqi Zhao, Chuanyong Qu and Wei Qiu

Materials 2023, 16(6), 2255; https://doi.org/10.3390/ma16062255 - 10 Mar 2023

Viewed by 1323

Abstract

Experimental characterization of the in-plane stress tensor is a basic requirement for the development of GaN strain engineering. In this work, a theoretical model of stress characterization for GaN using polarized micro-Raman spectroscopy was developed based on elasticity theory and lattice dynamics. Compared with other works, the presented model can give the quantitative relationship between all components of the in-plane stress tensor and the measured Raman shift. The model was verified by a calibration experiment under step-by-step uniaxial compression. By combining the stress characterization model with the expanding cavity model, the in-plane residual stress component field around Berkovich indentation on the (0001) plane GaN was achieved. The experimental results show that the distributions of the stress components, which significantly differed from the distribution of the Raman shift, were closely related to the GaN crystal structure and exhibited a gradient along each crystal direction. Full article

(This article belongs to the Special Issue Experimental Mechanics of Micro-Nano Scale Spectroscopy)

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12 pages, 4470 KiB

Open AccessArticle

Stress Component Decoupling Analysis Based on Large Numerical Aperture Objective Lens, an Impractical Approach

by Ying Chang, Donghui Fu, Mingyuan Sun, Saisai He and Wei Qiu

Materials 2022, 15(13), 4616; https://doi.org/10.3390/ma15134616 - 30 Jun 2022

Viewed by 1174

Abstract

Micro Raman spectroscopy is an effective method to quantitatively analyse the internal stress of semiconductor materials and structures. However, the decoupling analysis of the stress components for {100} monocrystalline silicon (c-Si) remains difficult. In the work outlined, physical and simulation experiments were combined to study the influence of the objective lens numerical aperture (NA) on the Raman stress characterization. The physical experiments and simulation experiments show that the spectral results obtained by using lenses with different NAs can accurately obtain the principal stress sum but cannot decouple the components of the in-plane stress. Even if the spectral resolution of the simulated experiment is ideal (The random errors of the polarization directions of less than ±1° and the systematic random errors of less than ±0.02 cm⁻¹). The analysis based on the theoretical model demonstrates that the proportion of the principal stress sum in the Raman shift obtained in an actual experiment exceeded 98.7%, while the proportion of the principal stress difference part was almost negligible. This result made it difficult to identify the variable effects of different stress states from the experimental results. Further simulation experiments in this work verify that when the principal stress sum was identical, the differences in the Raman shifts caused by different stress states were much smaller than the resolution of the existing Raman microscope system, which was hardly possible to identify in the experimental results. It was proven that decoupling analysis of stress components using the large-NA objective lens lacked actual practicability. Full article

(This article belongs to the Special Issue Experimental Mechanics of Micro-Nano Scale Spectroscopy)

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