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Feature Papers in Electronic Materials Section

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 79177

Printed Edition Available!
A printed edition of this Special Issue is available here.

Special Issue Editor

Dr. Fabrizio Roccaforte

E-Mail Website
Guest Editor
Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), 95121 Catania, Italy
Interests: wide band gap semiconductors (WBG); silicon carbide (SiC); gallium nitride (GaN); gallium oxide (Ga2O3), metal/semiconductor and metal/oxide/semiconductor interfaces; Schottky diode; JBS; MOSFET; HEMT; WBG device processing; power- and high-frequency electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Electronic materials are widespread in modern society. For example, communication devices, power supplies, energy conversion systems, computers and wireless systems, solid-state lighting devices, sensors and detectors, etc. are commmonly used in daily life and are often based on a variety of electronic materials with specific functionalities.

Clearly, the comprehension of the fundamental properties of these materials, the development of their processing technology, and their integration in real devices require continuous efforts from the scientific community.

This Special Issue on "Feature Papers in Electronic Materials Section" aims at collecting the most recent advances on electronic materials and devices in different fields of interest (e.g., nanotechnology, power- and high-frequency electronics, optoelectronic devices, sensors). For that reason, this Specail Issue will include a large variety of materials and related device technologies, such as nanostructures, binary and complex oxides, gate insulators, metallizations (Schottky, Ohmic), conventional semiconductors (Si, Ge, SiGe, GaAs, etc.), wide band gap semiconductors (SiC, GaN, Ga2O3, ZnO, AlN, diamond, etc.), heterostructures, nanowires, 2D materials and compounds (graphene, hexagonal boron nitride, transition metal dichalcogenides, etc.), optical and energy harvesting materials, etc. In addition, the development and application of advanced characterization techniques to electronic materials and devices are also in line with the scope of the SI.

The submission of regular articles and review papers on the above electronic materials and related devices is welcome.

Dr. Fabrizio Roccaforte
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • electronic materials
  • device processing
  • power- and high-frequency electronics
  • optoelectronics
  • sensors
  • detectors
  • semiconductors
  • wide band gap materials
  • graphene and related 2D materials

Related Special Issue

Published Papers (19 papers)

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Research

Jump to: Review

9 pages, 2641 KiB  
Article
Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC
by Matthias Kocher, Mathias Rommel, Paweł Piotr Michałowski and Tobias Erlbacher
Materials 2022, 15(1), 50; https://doi.org/10.3390/ma15010050 - 22 Dec 2021
Cited by 1 | Viewed by 3338
Abstract
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not [...] Read more.
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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9 pages, 22073 KiB  
Article
Induced Superconducting Transition in Ultra-Thin Iron-Selenide Films by a Mg-Coating Process
by Zhiqiang Cao, Longqing Chen, Zhenxiang Cheng and Wenbin Qiu
Materials 2021, 14(21), 6383; https://doi.org/10.3390/ma14216383 - 25 Oct 2021
Cited by 1 | Viewed by 1597
Abstract
Binary Iron selenide (FeSe) thin films have been widely studied for years to unveil the high temperature superconductivity in iron-based superconductors. However, the origin of superconducting transition in this unconventional system is still under debate and worth deep investigations. In the present work, [...] Read more.
Binary Iron selenide (FeSe) thin films have been widely studied for years to unveil the high temperature superconductivity in iron-based superconductors. However, the origin of superconducting transition in this unconventional system is still under debate and worth deep investigations. In the present work, the transition from insulator to superconductor was achieved in non-superconducting FeSe ultrathin films (~8 nm) grown on calcium fluoride substrates via a simple in-situ Mg-coating by a pulsed laser deposition technique. The Mg-coated FeSe film with an optimized amount of Mg exhibited a superconducting critical temperature as 9.7 K and an upper critical field as 30.9 T. Through systematic characterizations on phase identification, carrier transport behavior and high-resolution microstructural features, the revival of superconductivity in FeSe ultrathin films is mostly attributed to the highly crystallized FeSe and extra electron doping received from external Mg-coating process. Although the top few FeSe layers are incorporated with Mg, most FeSe layers are intact and protected by a stable magnesium oxide layer. This work provides a new strategy to induce superconductivity in FeSe films with non-superconducting behavior, which might contribute to a more comprehensive understanding of iron-based superconductivity and the benefit to downstream applications such as magnetic resonance imaging, high-field magnets and electrical cables. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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10 pages, 3655 KiB  
Article
Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)
by Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Annalisa Cannizzaro, Simona Boninelli and Francesco La Via
Materials 2021, 14(16), 4400; https://doi.org/10.3390/ma14164400 - 06 Aug 2021
Cited by 10 | Viewed by 2040
Abstract
This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal [...] Read more.
This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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10 pages, 2293 KiB  
Article
GaAs Nanomembranes in the High Electron Mobility Transistor Technology
by Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera and Róbert Kúdela
Materials 2021, 14(13), 3461; https://doi.org/10.3390/ma14133461 - 22 Jun 2021
Viewed by 1565
Abstract
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a [...] Read more.
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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Review

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26 pages, 8120 KiB  
Review
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
by Zeyu Chi, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze and Amador Pérez-Tomás
Materials 2022, 15(3), 1164; https://doi.org/10.3390/ma15031164 - 02 Feb 2022
Cited by 26 | Viewed by 5986
Abstract
Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve [...] Read more.
Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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29 pages, 4052 KiB  
Review
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices
by Raffaella Lo Nigro, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò and Fabrizio Roccaforte
Materials 2022, 15(3), 830; https://doi.org/10.3390/ma15030830 - 22 Jan 2022
Cited by 16 | Viewed by 4242
Abstract
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction [...] Read more.
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al2O3, HfO2) and some rare earth oxides (e.g., CeO2, Gd2O3, Sc2O3) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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26 pages, 3087 KiB  
Review
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
by Anthony Calzolaro, Thomas Mikolajick and Andre Wachowiak
Materials 2022, 15(3), 791; https://doi.org/10.3390/ma15030791 - 21 Jan 2022
Cited by 10 | Viewed by 4748
Abstract
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality [...] Read more.
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance. In particular, although AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) provide superior properties in terms of gate leakage currents compared to Schottky-gate HEMTs, the presence of an additional dielectric can induce threshold voltage instabilities. Similarly, the presence of trap states can be detrimental for the operational stability and reliability of other architectures of GaN devices employing a dielectric layer, such as hybrid MIS-FETs, trench MIS-FETs and vertical FinFETs. In this regard, the minimization of trap states is of critical importance to the advent of different insulated-gate GaN-based devices. Among the various dielectrics, aluminum oxide (Al2O3) is very attractive as a gate dielectric due to its large bandgap and band offsets to (Al)GaN, relatively high dielectric constant, high breakdown electric field as well as thermal and chemical stability against (Al)GaN. Additionally, although significant amounts of trap states are still present in the bulk Al2O3 and at the Al2O3/(Al)GaN interface, the current technological progress in the atomic layer deposition (ALD) process has already enabled the deposition of promising high-quality, uniform and conformal Al2O3 films to gate structures in GaN transistors. In this context, this paper first reviews the current status of gate dielectric technology using Al2O3 for GaN-based devices, focusing on the recent progress in engineering high-quality ALD-Al2O3/(Al)GaN interfaces and on the performance of Al2O3-gated GaN-based MIS-HEMTs for power switching applications. Afterwards, novel emerging concepts using the Al2O3-based gate dielectric technology are introduced. Finally, the recent status of nitride-based materials emerging as other gate dielectrics is briefly reviewed. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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15 pages, 1700 KiB  
Review
Recent Advances in Materials and Flexible Sensors for Arrhythmia Detection
by Matthew Guess, Nathan Zavanelli and Woon-Hong Yeo
Materials 2022, 15(3), 724; https://doi.org/10.3390/ma15030724 - 18 Jan 2022
Cited by 11 | Viewed by 3982
Abstract
Arrhythmias are one of the leading causes of death in the United States, and their early detection is essential for patient wellness. However, traditional arrhythmia diagnosis by expert evaluation from intermittent clinical examinations is time-consuming and often lacks quantitative data. Modern wearable sensors [...] Read more.
Arrhythmias are one of the leading causes of death in the United States, and their early detection is essential for patient wellness. However, traditional arrhythmia diagnosis by expert evaluation from intermittent clinical examinations is time-consuming and often lacks quantitative data. Modern wearable sensors and machine learning algorithms have attempted to alleviate this problem by providing continuous monitoring and real-time arrhythmia detection. However, current devices are still largely limited by the fundamental mismatch between skin and sensor, giving way to motion artifacts. Additionally, the desirable qualities of flexibility, robustness, breathability, adhesiveness, stretchability, and durability cannot all be met at once. Flexible sensors have improved upon the current clinical arrhythmia detection methods by following the topography of skin and reducing the natural interface mismatch between cardiac monitoring sensors and human skin. Flexible bioelectric, optoelectronic, ultrasonic, and mechanoelectrical sensors have been demonstrated to provide essential information about heart-rate variability, which is crucial in detecting and classifying arrhythmias. In this review, we analyze the current trends in flexible wearable sensors for cardiac monitoring and the efficacy of these devices for arrhythmia detection. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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46 pages, 9708 KiB  
Review
Diamond/GaN HEMTs: Where from and Where to?
by Joana C. Mendes, Michael Liehr and Changhui Li
Materials 2022, 15(2), 415; https://doi.org/10.3390/ma15020415 - 06 Jan 2022
Cited by 16 | Viewed by 6730
Abstract
Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility [...] Read more.
Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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18 pages, 5811 KiB  
Review
Towards Perfect Absorption of Single Layer CVD Graphene in an Optical Resonant Cavity: Challenges and Experimental Achievements
by Abedin Nematpour, Maria Luisa Grilli, Laura Lancellotti and Nicola Lisi
Materials 2022, 15(1), 352; https://doi.org/10.3390/ma15010352 - 04 Jan 2022
Cited by 3 | Viewed by 2242
Abstract
Graphene is emerging as a promising material for the integration in the most common Si platform, capable to convey some of its unique properties to fabricate novel photonic and optoelectronic devices. For many real functions and devices however, graphene absorption is too low [...] Read more.
Graphene is emerging as a promising material for the integration in the most common Si platform, capable to convey some of its unique properties to fabricate novel photonic and optoelectronic devices. For many real functions and devices however, graphene absorption is too low and must be enhanced. Among strategies, the use of an optical resonant cavity was recently proposed, and graphene absorption enhancement was demonstrated, both, by theoretical and experimental studies. This paper summarizes our recent progress in graphene absorption enhancement by means of Si/SiO2-based Fabry–Perot filters fabricated by radiofrequency sputtering. Simulations and experimental achievements carried out during more than two years of investigations are reported here, detailing the technical expedients that were necessary to increase the single layer CVD graphene absorption first to 39% and then up to 84%. Graphene absorption increased when an asymmetric Fabry–Perot filter was applied rather than a symmetric one, and a further absorption increase was obtained when graphene was embedded in a reflective rather than a transmissive Fabry–Perot filter. Moreover, the effect of the incident angle of the electromagnetic radiation and of the polarization of the light was investigated in the case of the optimized reflective Fabry–Perot filter. Experimental challenges and precautions to avoid evaporation or sputtering induced damage on the graphene layers are described as well, disclosing some experimental procedures that may help other researchers to embed graphene inside PVD grown materials with minimal alterations. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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22 pages, 4376 KiB  
Review
Materials and Processes for Schottky Contacts on Silicon Carbide
by Marilena Vivona, Filippo Giannazzo and Fabrizio Roccaforte
Materials 2022, 15(1), 298; https://doi.org/10.3390/ma15010298 - 31 Dec 2021
Cited by 9 | Viewed by 5007
Abstract
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the [...] Read more.
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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19 pages, 3752 KiB  
Review
Intrinsic Point Defects in Silica for Fiber Optics Applications
by Giuseppe Mattia Lo Piccolo, Marco Cannas and Simonpietro Agnello
Materials 2021, 14(24), 7682; https://doi.org/10.3390/ma14247682 - 13 Dec 2021
Cited by 9 | Viewed by 2934
Abstract
Due to its unique properties, amorphous silicon dioxide (a-SiO2) or silica is a key material in many technological fields, such as high-power laser systems, telecommunications, and fiber optics. In recent years, major efforts have been made in the development [...] Read more.
Due to its unique properties, amorphous silicon dioxide (a-SiO2) or silica is a key material in many technological fields, such as high-power laser systems, telecommunications, and fiber optics. In recent years, major efforts have been made in the development of highly transparent glasses, able to resist ionizing and non-ionizing radiation. However the widespread application of many silica-based technologies, particularly silica optical fibers, is still limited by the radiation-induced formation of point defects, which decrease their durability and transmission efficiency. Although this aspect has been widely investigated, the optical properties of certain defects and the correlation between their formation dynamics and the structure of the pristine glass remains an open issue. For this reason, it is of paramount importance to gain a deeper understanding of the structure–reactivity relationship in a-SiO2 for the prediction of the optical properties of a glass based on its manufacturing parameters, and the realization of more efficient devices. To this end, we here report on the state of the most important intrinsic point defects in pure silica, with a particular emphasis on their main spectroscopic features, their atomic structure, and the effects of their presence on the transmission properties of optical fibers. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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28 pages, 4921 KiB  
Review
A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes
by Luca Seravalli and Matteo Bosi
Materials 2021, 14(24), 7590; https://doi.org/10.3390/ma14247590 - 10 Dec 2021
Cited by 24 | Viewed by 5285
Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those [...] Read more.
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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25 pages, 5574 KiB  
Review
Diamond for Electronics: Materials, Processing and Devices
by Daniel Araujo, Mariko Suzuki, Fernando Lloret, Gonzalo Alba and Pilar Villar
Materials 2021, 14(22), 7081; https://doi.org/10.3390/ma14227081 - 22 Nov 2021
Cited by 25 | Viewed by 4980
Abstract
Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the [...] Read more.
Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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22 pages, 4164 KiB  
Review
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology
by Fan Li, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez-Tomas, Jonathan Edward Evans, Craig Arthur Fisher, Finn Alec Monaghan, Philip Andrew Mawby and Mike Jennings
Materials 2021, 14(19), 5831; https://doi.org/10.3390/ma14195831 - 05 Oct 2021
Cited by 19 | Viewed by 5352
Abstract
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and [...] Read more.
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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35 pages, 9228 KiB  
Review
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
by Francesco La Via, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Emilio Scalise, Anna Marzegalli, Andrey Sarikov, Leo Miglio, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Philipp Schuh, Michael Schöler, Manuel Kollmuss and Peter Wellmannadd Show full author list remove Hide full author list
Materials 2021, 14(18), 5348; https://doi.org/10.3390/ma14185348 - 16 Sep 2021
Cited by 35 | Viewed by 4782
Abstract
In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. [...] Read more.
In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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14 pages, 3669 KiB  
Review
Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation
by Alexander A. Lebedev, Vitali V. Kozlovski, Klavdia S. Davydovskaya and Mikhail E. Levinshtein
Materials 2021, 14(17), 4976; https://doi.org/10.3390/ma14174976 - 31 Aug 2021
Cited by 16 | Viewed by 2510
Abstract
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation [...] Read more.
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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35 pages, 6588 KiB  
Review
Recent Advances in High-Throughput Nanomaterial Manufacturing for Hybrid Flexible Bioelectronics
by Nathan Zavanelli, Jihoon Kim and Woon-Hong Yeo
Materials 2021, 14(11), 2973; https://doi.org/10.3390/ma14112973 - 31 May 2021
Cited by 13 | Viewed by 4813
Abstract
Hybrid flexible bioelectronic systems refer to integrated soft biosensing platforms with tremendous clinical impact. In this new paradigm, electrical systems can stretch and deform with the skin while previously hidden physiological signals can be continuously recorded. However, hybrid flexible bioelectronics will not receive [...] Read more.
Hybrid flexible bioelectronic systems refer to integrated soft biosensing platforms with tremendous clinical impact. In this new paradigm, electrical systems can stretch and deform with the skin while previously hidden physiological signals can be continuously recorded. However, hybrid flexible bioelectronics will not receive wide clinical adoption until these systems can be manufactured at industrial scales cost-effectively. Therefore, new manufacturing approaches must be discovered and studied under the same innovative spirit that led to the adoption of novel materials and soft structures. Recent works have taken mature manufacturing approaches from the graphics industry, such as gravure, flexography, screen, and inkjet printing, and applied them to fully printed bioelectronics. These applications require the cohesive study of many disparate parts. For instance, nanomaterials with optimal properties for each specific application must be dispersed in printable inks with rheology suited to each printing method. This review summarizes recent advances in printing technologies, key nanomaterials, and applications of the manufactured hybrid bioelectronics. We also discuss the existing challenges of the available nanomanufacturing methods and the areas that need immediate technological improvements. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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19 pages, 19378 KiB  
Review
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
by Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini
Materials 2021, 14(9), 2316; https://doi.org/10.3390/ma14092316 - 29 Apr 2021
Cited by 19 | Viewed by 4578
Abstract
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most [...] Read more.
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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