Laser Hyperdoped and/or Textured Silicon: Universal Response from UV till Far-IR Range
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (10 October 2023) | Viewed by 1513
Special Issue Editors
Interests: hyperdoped silicon; optoelectronics; photovoltaics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Silicon remains the basic reliable CMOS-compatible material platform for most multi-functional optoelectronic devices. Being IR-blind, it could become a universal UV–mid-IR photosensitive material via donor or acceptor hyperdoping and annealing procedures.
This Special Issue summarizes the recent advances in hyperdoping technologies, annealing regimes, chemical and structural characterization, electrical properties and spectral response of hyperdoped silicon, for its perspective optoelectronic applications.
Key topics:
- hyperdoping technologies;
- annealing regimes;
- chemical and structural characterization;
- electrical properties;
- spectral response;
- optoelectronic integration.
Dr. Sergey I. Kudryashov
Dr. Michael Kovalev
Guest Editors
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Keywords
- hyperdoped silicon
- nano- and microstructuring
- hyperdoping technologies
- annealing regimes
- chemical and structural characterization
- electrical properties
- UV–mid-IR spectral response
- optoelectronics
- photovoltaics
- optoelectronic integration
