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Quantum Dots and Applications
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Quantum Dots and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (31 December 2019) | Viewed by 20217

Special Issue Editor

Prof. Dr. Heesun Yang

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, Hongik University, Seoul 04066, Korea
Interests: quantum dots; materials chemistry; photoluminescence; electroluminescence; light-emitting diodes
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Colloidal quantum dots (QDs) have been generating substantial interest due to their unique, beneficial attributes such as easy, wide tunability of visible-to-infrared emission wavelength, high fluorescent quantum yield, and low-cost solution-processibility. Thus, they are undoubtedly considered to be alternative emissive materials for next-generation optoelectronic and biological applications. Owning to the great synthetic advances of QDs and their in-depth photophysical understanding, they have entered the commercialization phase.

This Special Issue aims to provide recent, informative, QD-related resources for readers by addressing a broad range of topics from QD materials chemistry and characterization to processing and device fabrication. It will focus on not only the synthesis of colloidal QD materials with various semiconductor compositions such as II-VI, III-V, I-III-VI, and halide perovskite families; core/shell heterostructural engineering; and surface functionalization/encapsulation and photophysical investigation, but on their versatile applications such as down-conversion-, electroluminescence-based light-emitting diodes for display/lighting devices, luminescent solar concentrators, and biological labels.

We firmly believe that this collection will provide an opportunity to circulate innovative ideas and technologies on these emerging topics and contribute to the dissemination of expertise for young and leading researchers in the QD-related field.

Prof. Dr. Heesun Yang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • colloidal quantum dots
  • emissive materials
  • materials chemistry
  • optoelectronic

Published Papers (5 papers)

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Editorial

Jump to: Research

3 pages, 159 KiB  
Editorial
Quantum Dots and Applications
by Chang-Yeol Han, Hyun-Sik Kim and Heesun Yang
Materials 2020, 13(4), 897; https://doi.org/10.3390/ma13040897 - 18 Feb 2020
Cited by 16 | Viewed by 2931
Abstract
It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly [...] Read more.
It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed. Full article
(This article belongs to the Special Issue Quantum Dots and Applications)

Research

Jump to: Editorial

10 pages, 2095 KiB  
Article
Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device
by Minkyong Kim, Chang-Yeol Han, Heesun Yang and Byoungnam Park
Materials 2019, 12(14), 2289; https://doi.org/10.3390/ma12142289 - 17 Jul 2019
Cited by 5 | Viewed by 2816
Abstract
We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is [...] Read more.
We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of temperature. Using the transmission line method (TLM) in a ZnO/PbSe/ZnO geometry device, we measured the ZnO/PbSe electrical contact resistance, a measure of charge transfer efficiency. Fabrication of a highly conductive ZnO film through Al doping allows for the formation of ZnO source and drain electrodes, replacing conventional metal electrodes. We found that band to band tunneling at the PbSe QD/ZnO interface governs charge transfer based on temperature-independent PbSe QD/ZnO contact resistance. In contrast, the PbSe QD channel sheet resistance decreased as the temperature increased, indicating thermally activated transport process in the PbSe QD film. These results demonstrate that, at the ZnO/PbSe QD interface, temperature-independent tunneling process initiates carrier injection followed by thermally activated carrier hopping, determining the electrical contact resistance. Full article
(This article belongs to the Special Issue Quantum Dots and Applications)
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11 pages, 2952 KiB  
Article
Emission Enhancement of Cu-Doped InP Quantum Dots through Double Shelling Scheme
by Hwi-Jae Kim, Jung-Ho Jo, Suk-Young Yoon, Dae-Yeon Jo, Hyun-Sik Kim, Byoungnam Park and Heesun Yang
Materials 2019, 12(14), 2267; https://doi.org/10.3390/ma12142267 - 15 Jul 2019
Cited by 11 | Viewed by 5304
Abstract
The doping of transition metal ions, such as Cu+ and Mn2+ into a quantum dot (QD) host is one of the useful strategies in tuning its photoluminescence (PL). This study reports on a two-step synthesis of Cu-doped InP QDs double-shelled with [...] Read more.
The doping of transition metal ions, such as Cu+ and Mn2+ into a quantum dot (QD) host is one of the useful strategies in tuning its photoluminescence (PL). This study reports on a two-step synthesis of Cu-doped InP QDs double-shelled with ZnSe inner shell/ZnS outer shell. As a consequence of the double shelling-associated effective surface passivation along with optimal doping concentrations, Cu-doped InP/ZnSe/ZnS (InP:Cu/ZnSe/ZnS) QDs yield single Cu dopant-related emissions with high PL quantum yields of 57–58%. This study further attempted to tune PL of Cu-doped QDs through the variation of InP core size, which was implemented by adopting different types of Zn halide used in core synthesis. As the first application of doped InP QDs as electroluminescent (EL) emitters, two representative InP:Cu/ZnSe/ZnS QDs with different Cu concentrations were then employed as active emitting layers of all-solution-processed, multilayered QD-light-emitting diodes (QLEDs) with the state-of-the-art hybrid combination of organic hole transport layer plus inorganic electron transport layers. The EL performances, such as luminance and efficiencies of the resulting QLEDs with different Cu doping concentrations, were compared and discussed. Full article
(This article belongs to the Special Issue Quantum Dots and Applications)
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9 pages, 5006 KiB  
Article
A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots
by Xu Zhang, Qing Li, Shikai Yan, Wei Lei, Jing Chen and Khan Qasim
Materials 2019, 12(8), 1215; https://doi.org/10.3390/ma12081215 - 13 Apr 2019
Cited by 10 | Viewed by 3655
Abstract
Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector [...] Read more.
Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors. Full article
(This article belongs to the Special Issue Quantum Dots and Applications)
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22 pages, 4046 KiB  
Article
Visual Appearance of Nanocrystal-Based Luminescent Solar Concentrators
by Panagiotis Moraitis, Gijs van Leeuwen and Wilfried van Sark
Materials 2019, 12(6), 885; https://doi.org/10.3390/ma12060885 - 16 Mar 2019
Cited by 14 | Viewed by 4725
Abstract
The luminescent solar concentrator (LSC) is a promising concept for the integration of photovoltaic (PV) generators into the building envelope. Having the form of semitransparent plates, LSCs offer a high degree of flexibility and can be used as windows or facades, as part [...] Read more.
The luminescent solar concentrator (LSC) is a promising concept for the integration of photovoltaic (PV) generators into the building envelope. Having the form of semitransparent plates, LSCs offer a high degree of flexibility and can be used as windows or facades, as part of the of building-integrated photovoltaic (BIPV) industry. Existing performance characterizations of LSC devices focus almost exclusively on electric power generation. However, when used as window components, the transmitted spectrum can alter the color, potentially affecting the visual comfort of the occupants by altering the properties of the sunlight. In this study, eight different state-of-the-art nanocrystals are evaluated as potential candidates for LSC window luminophores, using Monte Carlo simulations. The transparency of each LSC window varies between 90% and 50%, and the color-rendering properties are assessed with respect to the color rendering index (CRI) and the correlated color temperature (CCT). It is found that luminophores with a wide absorption bandwidth in the visible spectrum can maintain a high CRI value (above 85) and CCT values close to the Planckian locus, even for high luminophore concentrations. In contrast, luminophores that only absorb partly in the visible spectrum suffer from color distortion, a situation characterized by low CCT and CRI values, even at high transmittance. Full article
(This article belongs to the Special Issue Quantum Dots and Applications)
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