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Opto/Electronics Materials and Devices Applied for Telecommunications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (10 March 2024) | Viewed by 7805

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Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan
Interests: semiconductor devices and physics
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Special Issue Information

Dear Colleagues,

Based on the three major challenges outlined by the international semiconductor technology blueprint (ITRS) for the development of the semiconductor industry in the future, compound semiconductors are extremely suitable for use in high-efficiency power electronics in emerging communications standards beyond 5G/6G. The operation frequency of the telecommunication system is increasing and may be up to sub-THz/THz. Compound semiconductors, e.g., GaN and InP-based materials and devices, may have a key role in high-frequency, high-power, and high-temperature applications suitable for B5G/6G and satellite communication. There are, however, a lot of issues that need to be solved, such as those regarding materials, reliability, and device performance. Emerging materials and devices are upcoming ways in which applications could be enhanced.

This Special Issue will focus on materials and devices that can be used for B5G/6G system applications. The scope will cover, but will not be limited to, semiconductor material preparations (e.g., strain engineering, low defectivity and low cost), high-speed devices, power devices, lasers, photodetectors, modeling, simulation, and reliability.

It is my pleasure to invite you to submit papers to this Special Issue. Full papers, communications, and reviews are welcome.

Prof. Dr. Yeong-Her Wang
Guest Editor

Manuscript Submission Information

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Keywords

  • B5G/6G
  • III-V compounds
  • microwave device
  • power device
  • photonic device
  • materials growth

Published Papers (4 papers)

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Research

15 pages, 5714 KiB  
Article
Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes
by Yu-Chun Chen, Ruei-Hong Yan, Hsu-Chia Huang, Liang-Hsuan Nieh and Hao-Hsiung Lin
Materials 2023, 16(4), 1667; https://doi.org/10.3390/ma16041667 - 16 Feb 2023
Viewed by 2116
Abstract
We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two [...] Read more.
We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region. The devices with optimal AGR depth contain significantly higher breakdown voltages than those of devices either with shallower—or without any— AGR. For the FGR design, a series of devices with different spacings between AGR and FGR and different FGR opening widths for diffusion were fabricated and characterized. We show that when the spacing is longer than the critical value, the breakdown voltage can increase ~1.5 V higher than those of the APD devices without FGR. In addition, the wider the FGR opening width, the higher the breakdown voltage. TCAD simulations were also performed to study the effect of FGR, but showed less pronounced improvements, which could be due the discrepancy between the calculated and experimental diffusion profile. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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10 pages, 2573 KiB  
Article
GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by Kuntal Barman, Dai-Jie Lin, Rohit Gupta, Chih-Kang Chang and Jian-Jang Huang
Materials 2023, 16(2), 582; https://doi.org/10.3390/ma16020582 - 06 Jan 2023
Viewed by 1376
Abstract
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor [...] Read more.
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor interface, which results in a high breakdown voltage of 1.52 kV and maintains a channel on-resistance of 2.61 mΩ∙cm2. Because of the variable length and doping profile in the channel region, this model offers greater flexibility to meet a wide range of device application requirements. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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15 pages, 7613 KiB  
Article
Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT
by Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee and Yeong-Her Wang
Materials 2022, 15(24), 9067; https://doi.org/10.3390/ma15249067 - 19 Dec 2022
Cited by 3 | Viewed by 1844
Abstract
We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 [...] Read more.
We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 1.5×1012 A/mm (@ VG = −12 V) was observed in the stack layer MOS-HEMT due to the combined treatment. The performance of the dual surface-treated MOS–HEMT was significantly improved, particularly in terms of hysteresis, gate leakage, and subthreshold characteristics, with optimized gate annealing treatment. In addition, an organized gate leakage conduction mechanism in the AlGaN/GaN MOS–HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before and after gate annealing treatment and compared with the conventional Schottky gate. The conduction mechanism in the reverse gate bias was Poole–Frankel emission for the Schottky-gate HEMT and the MOS–HEMT before annealing. The dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. Meanwhile, gate leakage was governed by the hopping conduction mechanism in the MOS–HEMT without gate annealing modulation at a higher forward bias. After post-gate annealing (PGA) treatment, however, the leakage conduction mechanism was dominated by trap-assisted tunneling at the low to medium forward bias region and by Fowler–Nordheim tunneling at the higher forward bias region. Moreover, a decent product of maximum oscillation frequency and gate length (fmax × LG) was found to reach 27.16 GHz∙µm for the stack layer MOS–HEMT with PGA modulation. The dual surface-treated Al2O3/SiO2 stack layer MOS–HEMT with PGA modulation exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of −4.8 V, a higher ION/IOFF ratio of approximately 1.2×109, a subthreshold swing of 82 mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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16 pages, 10467 KiB  
Article
Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics
by Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee and Yeong-Her Wang
Materials 2022, 15(19), 6895; https://doi.org/10.3390/ma15196895 - 05 Oct 2022
Cited by 5 | Viewed by 1775
Abstract
A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after [...] Read more.
A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. The MOS-HEMT has a maximum drain current density of 847 mA/mm and peak transconductance of 181 mS/mm. The corresponding subthreshold swing and on/off ratio are 95 mV/dec and 3.3 × 107. The gate leakage current can be reduced by three orders of magnitude due to the Al2O3/ZrO2 stacked layer, which also contributes to the lower flicker noise. The temperature-dependent degradation of drain current density is 26%, which is smaller than the 47% of reference HEMT. The variation of subthreshold characteristics caused by thermal or time stress is smaller than that of the reference case, showing the proposed Al2O3/ZrO2 stacked gate dielectrics are reliable for device applications. Full article
(This article belongs to the Special Issue Opto/Electronics Materials and Devices Applied for Telecommunications)
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