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Investigation of Optoelectronic Functional Crystals: Crystal Growth, Properties and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 June 2023) | Viewed by 5222

Special Issue Editors


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Guest Editor
School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, China
Interests: optoelectronic material preparation and characterization; design and fabrication of photonics devices
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Physics, Tianjin Chengjian University, Tianjin 300384, China
Interests: defect structures of solid-state materials; photonics applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optoelectronic functional crystals have played a key role in advancing electronics and photonics. Their unique properties have enabled wide-ranging breakthroughs in the fields of optical modulation and waveguide, holographic storage and display, infrared and X-ray imaging, wavelength conversion and coherent optical amplification, optofluidic manipulation and interfacial science, photocatalytic degradation and photothermal conversion, etc. The present Special Issue aims to address both scientific and engineering developments related to the preparation, physico-chemical properties, and current and prospective applications of optoelectronic functional crystals. We strongly encourage the submission of novel interdisciplinary research, in which various techniques of materials engineering or artificial intelligence (AI) are involved.

Prof. Dr. Wenbo Yan
Dr. Lihong Shi
Guest Editors

Manuscript Submission Information

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Keywords

  • preparation and characterization of optoelectronic materials
  • first-principles study of optoelectronic materials
  • growth of optoelectronic crystals and simulation of crystal growth
  • photocatalytic degradation and photothermal conversion
  • light emission and infrared/X-ray imaging
  • optical modulation and waveguide
  • wavelength conversion and coherent optical amplification
  • holographic storage and display
  • optofluidic manipulation and interfacial science
  • deep learning and computer vision for optoelectronic applications
  • robotics and artificial intelligence for optoelectronic applications

Published Papers (5 papers)

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Editorial

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2 pages, 139 KiB  
Editorial
Investigation of Optoelectronic Functional Crystals: Crystal Growth, Properties and Applications
by Lihong Shi and Wenbo Yan
Materials 2023, 16(21), 6871; https://doi.org/10.3390/ma16216871 - 26 Oct 2023
Viewed by 526
Abstract
Optoelectronic functional crystals facilitate the conversion of light and electricity, inspiring breakthroughs in the fabrication of optoelectronic devices [...] Full article

Research

Jump to: Editorial

8 pages, 17616 KiB  
Article
Transmission Electron Microscopy Peeled Surface Defect of Perovskite Quantum Dots to Improve Crystal Structure
by Longfei Yuan, Taixin Zhou, Fengmin Jin, Guohong Liang, Yuxiang Liao, Aijuan Zhao and Wenbo Yan
Materials 2023, 16(17), 6010; https://doi.org/10.3390/ma16176010 - 01 Sep 2023
Viewed by 803
Abstract
Transmission electron microscopy (TEM) is an excellent characterization method to analyze the size, morphology, crystalline state, and microstructure of perovskite quantum dots (PeQDs). Nevertheless, the electron beam of TEM as an illumination source provides high energy, which causes morphological variation (fusion and melting) [...] Read more.
Transmission electron microscopy (TEM) is an excellent characterization method to analyze the size, morphology, crystalline state, and microstructure of perovskite quantum dots (PeQDs). Nevertheless, the electron beam of TEM as an illumination source provides high energy, which causes morphological variation (fusion and melting) and recession of the crystalline structure in low radiolysis tolerance specimens. Hence, a novel and facile strategy is proposed: electron beam peel [PbBr6]4− octahedron defects from the surface of QDs to optimize the crystal structure. TEM and high-angle annular dark-field scanning TEM (HAADF) tests indicate that the [PbBr6]4− octahedron would be peeled from the surface of QDs when QDs samples were irradiated under high-power irradiation, and then a clear image would be obtained. To avoid interference from a protective film of “carbon deposits” on the surface of the sample when using high resolution TEM, amorphous carbon film (15–20 nm) was deposited on the surface of QDs film and then characterized by TEM and HAADF. The detection consequences showed that the defection of PbBr2 on the surface of QDs will gradually disappear with the extension of radiation time, which further verifies the conjecture. Full article
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17 pages, 3656 KiB  
Article
Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN
by Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden and Julien Brault
Materials 2022, 15(23), 8602; https://doi.org/10.3390/ma15238602 - 02 Dec 2022
Cited by 6 | Viewed by 1276
Abstract
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology [...] Read more.
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and the annealing duration and temperature. Optimum annealing conditions were identified. The results of X-ray diffraction showed that optimization of the annealing recipe led to a significant reduction in the symmetric (0 0 0 2) and skew symmetric (1 0 −1 1) reflections, which was associated with a reduction in edge and mixed threading dislocation densities (TDDs). Furthermore, the impact on the crystalline structure of AlN and its surface was studied, and the results showed a transition from a surface with high roughness to a smoother surface morphology with a significant reduction in roughness. In addition, the annealing duration was increased at 1650 °C to further understand the impact on both AlN and h-BN, and the results showed a diffusion interplay between AlN and h-BN. Finally, an AlN layer was regrown on the top of an annealed template, which led to large terraces with atomic steps and low roughness. Full article
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14 pages, 354 KiB  
Article
Research on Hybrid Force Control of Redundant Manipulator with Reverse Task Priority
by Yu Su, Haiyan Liu, You Li, Bin Xue, Xianqing Liu, Minsi Li, Chunlan Lin and Xueying Wu
Materials 2022, 15(19), 6611; https://doi.org/10.3390/ma15196611 - 23 Sep 2022
Viewed by 1035
Abstract
This paper presents the reverse priority impedance control of manipulators with reference to redundant robots of a given task. The reverse priority kinematic control of redundant manipulators is first expressed in detail. The motion in the joint space is derived following the opposite [...] Read more.
This paper presents the reverse priority impedance control of manipulators with reference to redundant robots of a given task. The reverse priority kinematic control of redundant manipulators is first expressed in detail. The motion in the joint space is derived following the opposite order compared with the classical task priority–based solution. Then the Cartesian impedance control is combined with the reverse priority impedance control to solve the reverse hierarchical impedance controlled, so that the Cartesian impedance behavior can be divided into the primary priority impedance control and the secondary priority impedance control. Furthermore, the secondary impedance control task will not disturb the primary impedance control task. The motion in the joint space is affected following the opposite order and working in the corresponding projection operators. The primary impedance control tasks are implemented at the end, so as to avoid the possible deformations caused by the singularities occurring in the secondary impedance control tasks. Hence, the proposed reverse priority impedance control of manipulator can achieve the desired impedance control tasks with proper hierarchy. In this paper, the simulation experiments of the manipulator will verify the proposed reverse priority control algorithm. Full article
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20 pages, 4341 KiB  
Article
Structural Features and Defect Equilibrium in Cubic PrBa1−xSrxFe2O6−δ
by Ilia A. Leonidov, Alexey A. Markov, Mikhail A. Zavyalov, Oleg V. Merkulov, Elisaveta V. Shalaeva, Sergey S. Nikitin, Ekaterina V. Tsipis and Mikhail V. Patrakeev
Materials 2022, 15(13), 4390; https://doi.org/10.3390/ma15134390 - 21 Jun 2022
Cited by 5 | Viewed by 1141
Abstract
The structure, oxygen non-stoichiometry, and defect equilibrium in perovskite-type PrBa1−xSrxFe2O6−δ (x = 0, 0.25, 0.50) synthesized at 1350 °C were studied. For all compositions, X-ray diffraction testifies to the formation of a cubic [...] Read more.
The structure, oxygen non-stoichiometry, and defect equilibrium in perovskite-type PrBa1−xSrxFe2O6−δ (x = 0, 0.25, 0.50) synthesized at 1350 °C were studied. For all compositions, X-ray diffraction testifies to the formation of a cubic structure (S.G. Pm3¯m), but an electron diffraction study reveals additional diffuse satellites around each Bragg spot, indicating the primary incommensurate modulation with wave vectors about ±0.43a*. The results were interpreted as a sign of the short-order in both A-cation and anion sublattices in the areas of a few nanometers in size, and of an intermediate state before the formation of an ordered superstructure. An increase in oxygen deficiency was found to promote the ordering, whereas partial substitution of barium by strontium caused the opposite effect. The oxygen content in oxides as a function of oxygen partial pressure and temperature was measured by coulometric titration, and the data were used for the modeling of defect equilibrium in oxides. The simulation results implied oxygen vacancy ordering in PrBa1−xSrxFe2O6−δ that is in agreement with the electron diffraction study. Besides oxidation and charge disproportionation reactions, the reactions of oxygen vacancy distribution between non-equivalent anion positions, and their trapping in clusters with Pr3+ ions were taken into account by the model. It was demonstrated that an increase in the strontium content in Pr0.5Ba0.5−xSrxFeO3−δ suppressed ordering of oxygen vacancies, increased the binding energy of oxygen ions in the oxides, and resulted in an increase in the concentration of p-type carriers. Full article
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