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Dielectric Ceramics: Structure, Characterization, and Application

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced and Functional Ceramics and Glasses".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 5504

Special Issue Editors


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Guest Editor
Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal
Interests: solid state physics (electrical and magnetic properties of materials); biomaterials; niobium oxides and niobates physical properties
Special Issues, Collections and Topics in MDPI journals
Division of Materials Chemistry, Laboratory for Functional Materials, Rudjer Boskovic Institute, 10000 Zagreb, Croatia
Interests: oxide glasses and glass-ceramics; impedance spectroscopy; melt-quenching; (micro)structural characterization; structure and transport properties; crystallization; ceramics; biomaterials; dental materials; thin films; charge carrier dynamics
Special Issues, Collections and Topics in MDPI journals

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Assistant Guest Editor
Physics Institute, LACANM, Mato Grosso Federal University, Cuiabá, Mato Grosso, Brazil
Interests: ceramic; morphological characterization; conductivity; X-ray; impedance spectroscopy; polymers; electric modulus

Special Issue Information

Dear Colleagues,

You are invited to contribute to the Special Issue Dielectric Ceramics: Structure, Characterization and Application”. This Special Issue welcomes novel manuscripts dealing with previously unpublished advances in the area of dielectric ceramics.

Dielectric ceramics have become indispensable components in numerous devices due to their multifunctional property and are, at the moment, basic building block of every electronic device. Their physical characteristics, which are dependent on structure, composition, shape, and morphology, allow modelling the dielectric, ferroelectric, piezoelectric, and optical properties. One major advantage of these materials is that they can be manufactured in custom size, shape, and mode of operation. Different types of dielectric ceramics have been used for application in energy storage devices, such as high voltage capacitors, also in the form of a capacitor as a passive element in analogue and digital electronic circuits, as high voltage insulator, substrates for encapsulation of electronic circuits, gas sensors, magnetic tapes, piezoelectric transducers, transformer cores, surge protectors, etc. These materials have occupied a prominent place in a range of industries including the telecommunications sector, in particular in wireless, and are increasingly widespread and used due to particularities, such as relative low power consumption, high performance, and thermal stability. This also allows the minimization of electronic circuits. Due to the non-linear characteristics of these ceramics, there is a great potential for the construction of non-linear transmission lines for the generation of high-frequency waves with direct application in lasers or radars for applications in defense systems, and in space vehicles (satellites) for communications.

The purpose of this Special Issue is to compile the physical principles of dielectric ceramics operation, the advanced preparation processes of these materials in the micro and manometric dimensions, the discussion and analysis of the electrical response as a function of their structural and morphological characteristics, understanding ways of how to model the physical response, and, finally, the presentation of applications of these materials in current systems.

Dr. Manuel Pedro Fernandes Graça
Dr. Luka Pavić
Dr. Mauro Miguel Costa
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

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Research

8 pages, 1746 KiB  
Article
Improved Leakage Behavior at High Temperature via Engineering of Ferroelectric Sandwich Structures
by Guangliang Hu, Yinchang Shen, Qiaolan Fan, Wanli Zhao, Tongyu Liu, Chunrui Ma, Chun-Lin Jia and Ming Liu
Materials 2023, 16(2), 712; https://doi.org/10.3390/ma16020712 - 11 Jan 2023
Cited by 3 | Viewed by 1251
Abstract
The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO2-doped [...] Read more.
The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO2-doped BaZr0.35Ti0.65O3 (BZTS) layer sandwiched between two undoped BaZr0.35Ti0.65O3 (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature. Full article
(This article belongs to the Special Issue Dielectric Ceramics: Structure, Characterization, and Application)
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12 pages, 4536 KiB  
Article
Sr and Zr Co-Doped CaCu3Ti4O12 Ceramics with Improved Dielectric Properties
by Yunfei Yu, Qun Wang, Yongqing Li, Mehtab Ur Rehman and Waheed Qamar Khan
Materials 2022, 15(12), 4243; https://doi.org/10.3390/ma15124243 - 15 Jun 2022
Cited by 6 | Viewed by 1540
Abstract
The dielectric constant of CCTO materials can be as high as 104, which makes it suitable for use in electronic devices but the high dielectric loss limits its application. In this paper, a series of Sr and Zr co-doped CCTO ceramics [...] Read more.
The dielectric constant of CCTO materials can be as high as 104, which makes it suitable for use in electronic devices but the high dielectric loss limits its application. In this paper, a series of Sr and Zr co-doped CCTO ceramics having the formula Ca0.8Sr0.2Cu3Ti4−xZrxO12 (x = 0.1, 0.2, 0.3, 0.4) were obtained via a solid-state reaction technique. We force the effect of the Zr content on the phase composition, microstructure, cationic valence states, impedance, and dielectric properties of the as-prepared ceramics to reduce dielectric loss. The results demonstrate that Sr and Zr co-doping increases dielectric constant and reduces dielectric loss simultaneously, and the maximum dielectric constant (1.87 × 105, 1 Hz) and minimum dielectric loss (0.43, 102 Hz) are obtained when x = 0.3. Mixed Cu+/Cu2+ and Ti3+/Ti4+ valence states are observed to coexist in the co-doped material lattices, which promote dipole polarization, and thereby increase the dielectric constant of the ceramics. The dielectric properties of the materials are analyzed according to the internal barrier layer capacitance model, which elucidates the contributions of the grains and grain boundaries to dielectric performance. The maximum grain boundary resistance (3.7 × 105 Ω) is obtained for x = 0.3, which contributes toward the minimum dielectric loss (0.43) obtained for this ceramic at a frequency less than 1 kHz. The average grain sizes of the samples decrease with increasing Zr content, which is the primary factor increasing the grain boundary resistance of the co-doped ceramics. Full article
(This article belongs to the Special Issue Dielectric Ceramics: Structure, Characterization, and Application)
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8 pages, 2293 KiB  
Article
Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
by Hee Ju Shin, Hyun Kyu Seo, Su Yeon Lee, Minsoo Park, Seong-Geon Park and Min Kyu Yang
Materials 2022, 15(7), 2402; https://doi.org/10.3390/ma15072402 - 24 Mar 2022
Cited by 1 | Viewed by 1734
Abstract
TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental [...] Read more.
TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-μm scaled RRAM (resistive random access memory) devices. Full article
(This article belongs to the Special Issue Dielectric Ceramics: Structure, Characterization, and Application)
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