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Special Issue "Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials"

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 31 December 2023 | Viewed by 7171

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Dr. Fabrizio Roccaforte

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Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), 95121 Catania, Italy
Interests: wide band gap semiconductors (WBG); silicon carbide (SiC); gallium nitride (GaN); gallium oxide (Ga2O3), metal/semiconductor and metal/oxide/semiconductor interfaces; Schottky diode; JBS; MOSFET; HEMT; WBG device processing; power- and high-frequency electronics
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Dear Colleagues,

Energy saving, climate neutrality and sustainability are among the greatest challenges of our society, whilst completing the transition to renewable energy sources. In this context, advanced electronic materials play a critical and enabling role in the green and digital transition. Electronic materials include semiconductors for digital-, power- and high-frequency electronics, advanced functional materials for detectors and sensors, conductive and insulating coatings, flexible substrates, etc. All these materials are employed for the electronic components used in computers, wireless systems, solid-state lighting devices, sensors and detectors, wearable electronic devices, telecommunication systems, power devices for energy conversion, etc.

Clearly, the continuous development of electronic device technologies requires significant efforts from the scientific community, devoted to the full comprehension of the fundamental properties of these materials and of the related device’s physics.

After the great success of the first issue published in February 2022, this Special Issue "Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials" aims at collecting the most recent advances in electronic materials and devices in different fields of interest (e.g., nanotechnology, quantum technology, power- and high-frequency electronics, optoelectronic devices, sensors, etc.). For that reason, the S.I. will include papers on a variety of materials and related devices technologies, such as: nanostructures, binary and complex oxides, gate insulators, metallizations (Schottky, Ohmic), conventional semiconductors (Si, Ge, SiGe, GaAs, etc.), wide band gap semiconductors (e.g., SiC, GaN, Ga₂O₃, ZnO, AlN, diamond, etc.), heterostructures, nanowires, 2D materials and compounds (e.g., graphene, hexagonal boron nitride, transition metal dichalcogenides, etc.), optical and energy harvesting materials, magnetic materials, etc. In addition, the development and application of advanced characterization techniques to electronic materials and devices are also in line with the scope of the Special Issue.

The submission of regular articles and review papers on the above electronic materials and related devices is welcome.

Dr. Fabrizio Roccaforte
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

electronic materials
device processing
power- and high-frequency electronics
optoelectronics
sensors
detectors
semiconductors
wide band gap materials
graphene and related 2D materials

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Feature Papers in Electronic Materials Section in Materials (19 articles)

Published Papers (7 papers)

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Research

Open AccessArticle

Control of Coherent Light through Microperiodic Director Modulation in Nematic Films under Low-Voltage DC Electric Field

Georgi B. Hadjichristov

Materials 2023, 16(17), 6014; https://doi.org/10.3390/ma16176014 - 01 Sep 2023

Viewed by 276

Abstract

This work addresses the achievement of efficient control of laser light transmission through stationary microperiodic parallel stripe textures formed in films of nematic liquid crystals (NLCs) in planar-oriented cells upon a direct-current (DC) electric field. By varying the field intensity and, thereby, the field-induced periodic modulation of the nematic director and hence the complex transmittance function corresponding to the longitudinal domain texture induced in NLC films with initial planar alignment, the intensity of a linearly polarized laser beam passed through the films can be well controlled. In 25 µm-thick films of room-temperature NLCs pentylcyanobiphenyl (5CB), this results in a low-voltage (~4 V) sharp and deep V-shaped behavior of their electro-optically controlled transmittance. Such a reversible electro-optical effect is interesting for active control of laser beam intensity and other applications. The relevant physical mechanism is analyzed and explained. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessEditor’s ChoiceArticle

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions

Shigefusa F. Chichibu

and

Hiroshi Amano

Materials 2023, 16(5), 2016; https://doi.org/10.3390/ma16052016 - 28 Feb 2023

Cited by 1 | Viewed by 1181

Abstract

With the ammonothermal method, one of the most promising technologies for scalable, cost-effective production of bulk single crystals of the wide bandgap semiconductor GaN is investigated. Specifically, etch-back and growth conditions, as well as the transition from the former to the latter, are studied using a 2D axis symmetrical numerical model. In addition, experimental crystal growth results are analyzed in terms of etch-back and crystal growth rates as a function of vertical seed position. The numerical results of internal process conditions are discussed. Variations along the vertical axis of the autoclave are analyzed using both numerical and experimental data. During the transition from quasi-stable conditions of the dissolution stage (etch-back process) to quasi-stable conditions of the growth stage, significant temperature differences of 20 K to 70 K (depending on vertical position) occur temporarily between the crystals and the surrounding fluid. These lead to maximum rates of seed temperature change of 2.5 K/min to 1.2 K/min depending on vertical position. Based on temperature differences between seeds, fluid, and autoclave wall upon the end of the set temperature inversion process, deposition of GaN is expected to be favored on the bottom seed. The temporarily observed differences between the mean temperature of each crystal and its fluid surrounding diminish about 2 h after reaching constant set temperatures imposed at the outer autoclave wall, whereas approximately quasi-stable conditions are reached about 3 h after reaching constant set temperatures. Short-term fluctuations in temperature are mostly due to fluctuations in velocity magnitude, usually with only minor variations in the flow direction. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessArticle

Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

Alexander A. Lebedev

Vitali V. Kozlovski

Klavdia S. Davydovskaya

Roman A. Kuzmin

Mikhail E. Levinshtein

and

Anatolii M. Strel’chuk

Materials 2022, 15(23), 8637; https://doi.org/10.3390/ma15238637 - 03 Dec 2022

Cited by 1 | Viewed by 864

Abstract

In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (C–V) and current-voltage (I–V) characteristics. The dependence of the base resistance in high-voltage 4H-SiC Schottky diodes on the dose of irradiation by electrons and protons is experimentally traced in the range of eight orders of magnitude. It is demonstrated that the dependence of the carrier concentration on the irradiation dose can be determined unambiguously and reliably in a very wide range of compensation levels, based on the results of measuring the I–V characteristics. It is shown that the determination of the carrier removal rate using the I–V characteristics is more correct than using the C–V characteristics, especially in the case of high radiation doses. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessEditor’s ChoiceArticle

Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

and

Materials 2022, 15(22), 8230; https://doi.org/10.3390/ma15228230 - 19 Nov 2022

Viewed by 943

Abstract

Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or

Z_{1, 2}

transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the

Z_{1, 2}

transition, and only the first stage,

Z_{1}^{0}

, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessEditor’s ChoiceArticle

A Low Temperature Growth of Cu₂O Thin Films as Hole Transporting Material for Perovskite Solar Cells

and

Materials 2022, 15(21), 7790; https://doi.org/10.3390/ma15217790 - 04 Nov 2022

Cited by 1 | Viewed by 1317

Abstract

Copper oxide thin films have been successfully synthesized through a metal–organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd)₂, complex. Operative conditions of fabrication strongly affect both the composition and morphologies of the copper oxide thin films. The deposition temperature has been accurately monitored in order to stabilize and to produce, selectively and reproducibly, the two phases of cuprite Cu₂O and/or tenorite CuO. The present approach has the advantages of being industrially appealing, reliable, and fast for the production of thin films over large areas with fine control of both composition and surface uniformity. Moreover, the methylammonium lead iodide (MAPI) active layer has been successfully deposited on the ITO/Cu₂O substrate by the Low Vacuum Proximity Space Effusion (LV-PSE) technique. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM) analyses have been used to characterize the deposited films. The optical band gap (E_g), ranging from 1.99 to 2.41 eV, has been determined through UV-vis analysis, while the electrical measurements allowed to establish the p-type conductivity behavior of the deposited Cu₂O thin films with resistivities from 31 to 83 Ω cm and carrier concentration in the order of 1.5–2.8 × 10¹⁶ cm⁻³. These results pave the way for potential applications of the present system as a hole transporting layer combined with a perovskite active layer in emergent solar cell technologies. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessArticle

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

and

Materials 2022, 15(21), 7669; https://doi.org/10.3390/ma15217669 - 31 Oct 2022

Viewed by 1016

Abstract

The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400–1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Open AccessEditor’s ChoiceArticle

Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy

and

Materials 2022, 15(21), 7621; https://doi.org/10.3390/ma15217621 - 30 Oct 2022

Viewed by 935

Abstract

Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly applied to reveal defects causing states that are localised in the energy gap, these methods also sense-charge from quantum wells in heterostructures. However, proper evaluation of material response to external stimuli requires knowledge of material properties such as electron effective mass in complex structures. Here we propose a method for precise evaluation of effective mass in quantum well heterostructures. The infinite well model is successfully applied to the InGaAsN/GaAs quantum well structure and used to evaluate electron effective mass in the conduction and valence bands. The effective mass m/m₀ of charges from the conduction band was 0.093 ± 0.006, while the charges from the valence band exhibited an effective mass of 0.122 ± 0.018. Full article

(This article belongs to the Special Issue Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials)

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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Title: Silicon and Silicon Carbide recrystallization by laser annealing: a review
Authors: Daniele Arduino, Stefano Stassi*, Chiara Spano, Luciano Scaltrito, Sergio Ferrero and Valentina Bertana
Affiliation: Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy

Title: Single ion counting by ultra-thin membrane SiC detector
Authors: E.Sangregorio, E.Medina, A. Crnjac, M.JakCic, L.Calcagno, A.Vignati, F.Romano, G.Miluzzo and M.Camarda

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