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Inorganics
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Advanced Inorganic Semiconductor Materials
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Advanced Inorganic Semiconductor Materials

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 18602

Printed Edition Available!
A printed edition of this Special Issue is available here.

Special Issue Editors

Dr. Sake Wang

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Guest Editor
College of Science, Jinling Institute of Technology, Nanjing, China
Interests: spin and valley transport in 2D materials; valley-dependent optoelectronic properties; design of 2D van der Waals heterostructure-based novel high-efficiency photocatalysts using first-principles calculation
Special Issues, Collections and Topics in MDPI journals
Dr. Minglei Sun

E-Mail Website
Guest Editor
Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
Interests: first-principles computational study of 2D materials and their heterostructures; particularly for photocatalyst applications
Special Issues, Collections and Topics in MDPI journals
Dr. Nguyen Tuan Hung

E-Mail Website
Guest Editor
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai, Japan
Interests: thermoelectricity; artificial muscles; nanomechanics; first-principles calculations
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of the vast majority of electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent and flexible nanodevices, 2D materials could also serve as one of the ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry. 

Despite the significant advances in the previous decade, both opportunities and challenges still remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices. We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Minglei Sun
Dr. Nguyen Tuan Hung
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inorganics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

Related Special Issue

Published Papers (13 papers)

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Editorial

Jump to: Research, Review, Other

5 pages, 183 KiB  
Editorial
Advanced Inorganic Semiconductor Materials
by Sake Wang, Minglei Sun and Nguyen Tuan Hung
Inorganics 2024, 12(3), 81; https://doi.org/10.3390/inorganics12030081 - 06 Mar 2024
Viewed by 769
Abstract
The information technology revolution has been based decisively on the development and application of inorganic semiconductors [...] Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)

Research

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11 pages, 2577 KiB  
Article
Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
by Jie Lu, Zeyang Xiang, Kexiang Wang, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ranping Li, Zixuan Wang, Huilin Jin and Ran Jiang
Inorganics 2024, 12(2), 60; https://doi.org/10.3390/inorganics12020060 - 17 Feb 2024
Viewed by 915
Abstract
The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe2 channel, coupled with an oxygen-deficient (OD)-HfO2 layer structure. In these transistors, the application of negative gate pulses resulted in a notable increase in the post-synaptic current, [...] Read more.
The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe2 channel, coupled with an oxygen-deficient (OD)-HfO2 layer structure. In these transistors, the application of negative gate pulses resulted in a notable increase in the post-synaptic current, while positive pulses led to a decrease. This distinctive response can be attributed to the dynamic interplay of charge interactions, significantly influenced by the ferroelectric characteristics of the OD-HfO2 layer. The findings from this study highlight the capability of this particular TFT configuration in closely mirroring the intricate functionalities of biological neurons, paving the way for advancements in bio-inspired computing technologies. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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12 pages, 5871 KiB  
Article
A First-Principle Study of Two-Dimensional Boron Nitride Polymorph with Tunable Magnetism
by Liping Qiao, Zhongqi Ma, Fulong Yan, Sake Wang and Qingyang Fan
Inorganics 2024, 12(2), 59; https://doi.org/10.3390/inorganics12020059 - 15 Feb 2024
Viewed by 967
Abstract
Using the first-principles calculation, two doping two-dimensional (2D) BN (boron nitride) polymorphs are constructed in this work. The two doping 2D BN polymorphs B5N6Al and B5N6C sheets are thermally stable under 500 K. All the [...] Read more.
Using the first-principles calculation, two doping two-dimensional (2D) BN (boron nitride) polymorphs are constructed in this work. The two doping 2D BN polymorphs B5N6Al and B5N6C sheets are thermally stable under 500 K. All the B6N6, B5N6Al, and B5N6C sheets are semiconductor materials with indirect band gaps on the basis of a hybrid functional. The anisotropic calculation results indicate that Young’s modulus (E) and Poisson’s ratio (v) of the B6N6, B5N6Al, and B5N6C sheets are anisotropic in the xy plane. In addition, the magnetic properties of the B6N6, B5N6Al, and B5N6C sheets have also been investigated. According to the calculation of the magnetic properties, B6N6 sheet does not exhibit magnetism, while it shows weak magnetism after doping carbon atom to the BN sheet. This paper explores the influence mechanism of doping different atoms on the basic physical properties of two-dimensional BN sheets. It not only constructs a relationship between structure and performance but also provides theoretical support for the performance regulation of BN materials. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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12 pages, 3133 KiB  
Article
Engineering Band Gap of Ternary Ag2TexS1−x Quantum Dots for Solution-Processed Near-Infrared Photodetectors
by Zan Wang, Yunjiao Gu, Daniil Aleksandrov, Fenghua Liu, Hongbo He and Weiping Wu
Inorganics 2024, 12(1), 1; https://doi.org/10.3390/inorganics12010001 - 19 Dec 2023
Viewed by 1534
Abstract
Silver-based chalcogenide semiconductors exhibit low toxicity and near-infrared optical properties and are therefore extensively employed in the field of solar cells, photodetectors, and biological probes. Here, we report a facile mixture precursor hot-injection colloidal route to prepare Ag2TexS1−x [...] Read more.
Silver-based chalcogenide semiconductors exhibit low toxicity and near-infrared optical properties and are therefore extensively employed in the field of solar cells, photodetectors, and biological probes. Here, we report a facile mixture precursor hot-injection colloidal route to prepare Ag2TexS1−x ternary quantum dots (QDs) with tunable photoluminescence (PL) emissions from 950 nm to 1600 nm via alloying band gap engineering. As a proof-of-concept application, the Ag2TexS1−x QDs-based near-infrared photodetector (PD) was fabricated via solution-processes to explore their photoelectric properties. The ICP-OES results reveal the relationship between the compositions of the precursor and the samples, which is consistent with Vegard’s equation. Alloying broadened the absorption spectrum and narrowed the band gap of the Ag2S QDs. The UPS results demonstrate the energy band alignment of the Ag2Te0.53S0.47 QDs. The solution-processed Ag2TexS1−x QD-based PD exhibited a photoresponse to 1350 nm illumination. With an applied voltage of 0.5 V, the specific detectivity is 0.91 × 1010 Jones and the responsivity is 0.48 mA/W. The PD maintained a stable response under multiple optical switching cycles, with a rise time of 2.11 s and a fall time of 1.04 s, which indicate excellent optoelectronic performance. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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14 pages, 3051 KiB  
Article
The Effect of Cation Incorporation on the Elastic and Vibrational Properties of Mixed Lead Chloride Perovskite Single Crystals
by Syed Bilal Junaid, Furqanul Hassan Naqvi and Jae-Hyeon Ko
Inorganics 2023, 11(10), 416; https://doi.org/10.3390/inorganics11100416 - 22 Oct 2023
Cited by 1 | Viewed by 1393
Abstract
In recent years, there have been intense studies on hybrid organic–inorganic compounds (HOIPs) due to their tunable and adaptable features. This present study reports the vibrational, structural, and elastic properties of mixed halide single crystals of MAxFA1-xPbCl3 [...] Read more.
In recent years, there have been intense studies on hybrid organic–inorganic compounds (HOIPs) due to their tunable and adaptable features. This present study reports the vibrational, structural, and elastic properties of mixed halide single crystals of MAxFA1-xPbCl3 at room temperature by introducing the FA cation at the A-site of the perovskite crystal structure. Powder X-ray diffraction analysis confirmed that its cubic crystal symmetry is similar to that of MAPbCl3 and FAPbCl3 with no secondary phases, indicating a successful synthesis of the MAxFA1-xPbCl3 mixed halide single crystals. Structural analysis confirmed that the FA substitution increases the lattice constant with increasing FA concentration. Raman spectroscopy provided insight into the vibrational modes, revealing the successful incorporation of the FA cation into the system. Brillouin spectroscopy was used to investigate the changes in the elastic properties induced via the FA substitution. A monotonic decrease in the sound velocity and the elastic constant suggests that the incorporation of large FA cations causes distortion within the inorganic framework, altering bond lengths and angles and ultimately resulting in decreased elastic constants. An analysis of the absorption coefficient revealed lower attenuation coefficients as the FA content increased, indicating reduced damping effects and internal friction. The current findings can facilitate the fundamental understanding of mixed lead chloride perovskite materials and pave the way for future investigations to exploit the unique properties of mixed halide perovskites for advanced optoelectronic applications. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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14 pages, 8345 KiB  
Article
GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption
by Hassen Dakhlaoui, Walid Belhadj, Haykel Elabidi, Fatih Ungan and Bryan M. Wong
Inorganics 2023, 11(10), 401; https://doi.org/10.3390/inorganics11100401 - 13 Oct 2023
Viewed by 1199
Abstract
We present the first detailed study of optical absorption coefficients (OACs) in a GaAs quantum dot confined with a Woods–Saxon potential containing a hydrogenic impurity at its center. We use a finite difference method to solve the Schrödinger equation within the framework of [...] Read more.
We present the first detailed study of optical absorption coefficients (OACs) in a GaAs quantum dot confined with a Woods–Saxon potential containing a hydrogenic impurity at its center. We use a finite difference method to solve the Schrödinger equation within the framework of the effective mass approximation. First, we compute energy levels and probability densities for different parameters governing the confining potential. We then calculate dipole matrix elements and energy differences, E1p−E1s, and discuss their role with respect to the OACs. Our findings demonstrate the important role of these parameters in tuning the OAC to enable blue or red shifts and alter its amplitude. Our simulations provide a guided path to fabricating new optoelectronic devices by adjusting the confining potential shape. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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15 pages, 2552 KiB  
Article
Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers
by Hazem Deeb, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan and Kirill Lozovoy
Inorganics 2023, 11(7), 303; https://doi.org/10.3390/inorganics11070303 - 15 Jul 2023
Cited by 1 | Viewed by 1639
Abstract
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses [...] Read more.
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses of the absorption and multiplication layers of germanium on the silicon avalanche photodiode were simulated and analyzed. The study revealed that the gain of the avalanche photodiode is directly proportional to the thickness of the multiplication layer. However, a thicker multiplication layer was also associated with a higher breakdown voltage. The bandwidth of the device, on the other hand, was inversely proportional to the product of the absorption layer thickness and the carrier transit time. A thinner absorption layer offers a higher bandwidth, but it may compromise responsivity and quantum efficiency. In this study, the dependence of the photodetectors’ operating characteristics on the doping concentration used for the multiplication and absorption layers is revealed for the first time. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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11 pages, 3962 KiB  
Article
Strain Modulation of Electronic Properties in Monolayer SnP2S6 and GeP2S6
by Junlei Zhou, Yuzhou Gu, Yue-E Xie, Fen Qiao, Jiaren Yuan, Jingjing He, Sake Wang, Yangsheng Li and Yangbo Zhou
Inorganics 2023, 11(7), 301; https://doi.org/10.3390/inorganics11070301 - 15 Jul 2023
Cited by 2 | Viewed by 1017
Abstract
In recent years, two-dimensional (2D) materials have attracted significant attention due to their distinctive properties, including exceptional mechanical flexibility and tunable electronic properties. Via the first-principles calculation, we investigate the effect of strain on the electronic properties of monolayer SnP2S6 [...] Read more.
In recent years, two-dimensional (2D) materials have attracted significant attention due to their distinctive properties, including exceptional mechanical flexibility and tunable electronic properties. Via the first-principles calculation, we investigate the effect of strain on the electronic properties of monolayer SnP2S6 and GeP2S6. We find that monolayer SnP2S6 is an indirect bandgap semiconductor, while monolayer GeP2S6 is a direct bandgap semiconductor. Notably, under uniform biaxial strains, SnP2S6 undergoes an indirect-to-direct bandgap transition at 4.0% biaxial compressive strains, while GeP2S6 exhibits a direct-to-indirect transition at 2.0% biaxial tensile strain. The changes in the conduction band edge can be attributed to the high-symmetry point Γ being more sensitive to strain than K. Thus, the relocation of the conduction band and valence band edges in monolayer SnP2S6 and GeP2S6 induces a direct-to-indirect and indirect-to-direct bandgap transition, respectively. Consequently, the strain is an effective band engineering scheme which is crucial for the design and development of next-generation nanoelectronic and optoelectronic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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9 pages, 2592 KiB  
Article
Adsorption of Metal Atoms on SiC Monolayer
by Lei Jiang, Yanbo Dong and Zhen Cui
Inorganics 2023, 11(6), 240; https://doi.org/10.3390/inorganics11060240 - 30 May 2023
Cited by 2 | Viewed by 1132
Abstract
The electronic, magnetic, and optical behaviors of metals (M = Ag, Al, Au, Bi, Ca, Co, Cr, Cu, Fe, Ga, K, Li, Mn, Na, Ni) adsorbed on the SiC monolayer have been calculated based on density functional theory (DFT). The binding energy results [...] Read more.
The electronic, magnetic, and optical behaviors of metals (M = Ag, Al, Au, Bi, Ca, Co, Cr, Cu, Fe, Ga, K, Li, Mn, Na, Ni) adsorbed on the SiC monolayer have been calculated based on density functional theory (DFT). The binding energy results show that all the M-adsorbed SiC systems are stable. All the M-adsorbed SiC systems are magnetic with magnetic moments of 1.00 μB (Ag), 1.00 μB (Al), 1.00 μB (Au), 1.01 μB (Bi), 1.95 μB (Ca), 1.00 μB (Co), 4.26 μB (Cr), 1.00 μB (Cu), 2.00 μB (Fe), 1.00 μB (Ga), 0.99 μB (K), 1.00 μB (Li), 3.00 μB (Mn), and 1.00 μB (Na), respectively, except for the Ni-adsorbed SiC system. The Ag, Al, Au, Cr, Cu, Fe, Ga, Mn, and Na-adsorbed SiC systems become magnetic semiconductors, while Bi, Ca, Co, K, and Li-adsorbed SiC systems become semimetals. The Bader charge results show that there is a charge transfer between the metal atom and the SiC monolayer. The work function of the K-adsorbed SiC system is 2.43 eV, which is 47.9% lower than that of pristine SiC and can be used in electron-emitter devices. The Bi, Ca, Ga, and Mn-adsorbed SiC systems show new absorption peaks in the visible light range. These results indicate that M-adsorbed SiC systems have potential applications in the field of spintronic devices and solar energy conversion photovoltaic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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11 pages, 2932 KiB  
Article
Fluorescence Resonance Energy Transfer Properties and Auger Recombination Suppression in Supraparticles Self-Assembled from Colloidal Quantum Dots
by Xinhua Tian, Hao Chang, Hongxing Dong, Chi Zhang and Long Zhang
Inorganics 2023, 11(5), 218; https://doi.org/10.3390/inorganics11050218 - 18 May 2023
Cited by 1 | Viewed by 1770 | Correction
Abstract
Colloid quantum dots (CQDs) are recognized as an ideal material for applications in next-generation optoelectronic devices, owing to their unique structures, outstanding optical properties, and low-cost preparation processes. However, monodisperse CQDs cannot meet the requirements of stability and collective properties for device applications. [...] Read more.
Colloid quantum dots (CQDs) are recognized as an ideal material for applications in next-generation optoelectronic devices, owing to their unique structures, outstanding optical properties, and low-cost preparation processes. However, monodisperse CQDs cannot meet the requirements of stability and collective properties for device applications. Therefore, it is urgent to build stable 3D multiparticle systems with collective physical and optical properties, which is still a great challenge for nanoscience. Herein, we developed a modified microemulsion template method to synthesize quantum dot supraparticles (QD-SPs) with regular shapes and a high packing density, which is an excellent research platform for ultrafast optical properties of composite systems. The redshift of the steady-state fluorescence spectra of QD-SPs compared to CQD solutions indicates that fluorescence resonance energy transfer (FRET) occurred between the CQDs. Moreover, we investigated the dynamic processes of energy transfer in QD-SPs by time-resolved ultrafast fluorescence spectroscopy. The dynamic redshift and lifetime changes of the spectra further verified the existence of rapid energy transfer between CQDs with different exciton energies. In addition, compared with CQD solutions, the steady-state fluorescence lifetime of SPs increased and the fluorescence intensity decreased slowly with increasing temperature, which indicates that the SP structure suppressed the Auger recombination of CQDs. Our results provide a practical approach to enhance the coupling and luminescence stability of CQDs, which may enable new physical phenomena and improve the performance of optoelectronic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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Review

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18 pages, 7064 KiB  
Review
Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3
by Lin-Qing Zhang, Wan-Qing Miao, Xiao-Li Wu, Jing-Yi Ding, Shao-Yong Qin, Jia-Jia Liu, Ya-Ting Tian, Zhi-Yan Wu, Yan Zhang, Qian Xing and Peng-Fei Wang
Inorganics 2023, 11(10), 397; https://doi.org/10.3390/inorganics11100397 - 11 Oct 2023
Viewed by 1802
Abstract
β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind [...] Read more.
β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind ultraviolet photodetectors. Ohmic contact is one of the key steps in the β-Ga2O3 device fabrication process for power applications. Ohmic contact techniques have been developed in recent years, and they are summarized in this review. First, the basic theory of metal–semiconductor contact is introduced. After that, the representative literature related to Ohmic contact with β-Ga2O3 is summarized and analyzed, including the electrical properties, interface microstructure, Ohmic contact formation mechanism, and contact reliability. In addition, the promising alternative schemes, including novel annealing techniques and Au-free contact materials, which are compatible with the CMOS process, are discussed. This review will help our theoretical understanding of Ohmic contact in β-Ga2O3 devices as well as the development trends of Ohmic contact schemes. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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18 pages, 4081 KiB  
Review
Research and Application Progress of Inverse Opal Photonic Crystals in Photocatalysis
by Hongming Xiang, Shu Yang, Emon Talukder, Chenyan Huang and Kaikai Chen
Inorganics 2023, 11(8), 337; https://doi.org/10.3390/inorganics11080337 - 15 Aug 2023
Viewed by 1541
Abstract
In order to solve the problem of low photocatalytic efficiency in photocatalytic products, researchers proposed a method to use inverse opal photonic crystal structure in photocatalytic materials. This is due to a large specific surface area and a variety of optical properties of [...] Read more.
In order to solve the problem of low photocatalytic efficiency in photocatalytic products, researchers proposed a method to use inverse opal photonic crystal structure in photocatalytic materials. This is due to a large specific surface area and a variety of optical properties of the inverse opal photonic crystal, which are great advantages in photocatalytic performance. In this paper, the photocatalytic principle and preparation methods of three-dimensional inverse opal photonic crystals are introduced, including the preparation of basic inverse opal photonic crystals and the photocatalytic modification of inverse opal photonic crystals, and then the application progresses of inverse opal photonic crystal photocatalyst in sewage purification, production of clean energy and waste gas treatment are introduced. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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Other

2 pages, 1120 KiB  
Correction
Correction: Tian et al. Fluorescence Resonance Energy Transfer Properties and Auger Recombination Suppression in Supraparticles Self-Assembled from Colloidal Quantum Dots. Inorganics 2023, 11, 218
by Xinhua Tian, Hao Chang, Hongxing Dong, Chi Zhang and Long Zhang
Inorganics 2023, 11(8), 340; https://doi.org/10.3390/inorganics11080340 - 18 Aug 2023
Viewed by 687
Abstract
Error in Figure [...] Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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