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Advanced Materials and Structures for Photovoltaic Applications

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "A2: Solar Energy and Photovoltaic Systems".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 4509

Special Issue Editor


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Guest Editor
Department of Condensed Matter Physics and Microelectronics, Faculty of Physics, Sofia University, blvd. “James Bourchier” 5, 1164 Sofia, Bulgaria
Interests: semiconductor materials and nanostructures for ICT and photovoltaics; dilute nitrides; perovskites; quantum wells; quantum dots; superlattices; surface photovoltage spectroscopy

Special Issue Information

Dear Colleagues,

The Guest Editor is inviting submissions for a Special Issue of Energies, “Advanced Materials and Structures for Photovoltaic Applications”.

The growing need for energy on a global scale is a major issue at present, because of the ecological problems it can cause. The quantity of solar energy reaching Earth and its availability worldwide makes it an excellent candidate as a renewable energy source. Photovoltaics (PV) is one of the key technologies to deliver electricity in sufficient quantities, at an affordable cost, and in a sustainable manner. At present, silicon cell technologies represent the largest part of the PV panel market (>90%). Although reliable Si-based PV systems are commercially available and widely applied, the further development of materials and technologies is crucial to paving the way for next-generation PV, which should overpass the Shockley–Queisser efficiency limit and become a major source of sustainable energy. Therefore, novel PV materials of single-crystalline, polycrystalline, amorphous or organic nature are under extensive quest and development. Ideally, they should be earth-abundant and have low toxicity. At the same time, there is a growing need to look for new architectures and/or to combine two or more p-n transitions with complementary solar absorption spectra. In addition, due to their intended use in very large volumes, future photovoltaic technologies must be sustainable and environmentally friendly, with low processing costs and resistance to prolonged solar radiation under ambient conditions.

Therefore, in this Special Issue, we invite original submissions of new research outcomes, as well as review articles that highlight the advances in materials and structures for photovoltaic applications.

Topics of interest for publication in this Special Issue include, but are not limited to:

  • Perovskites, including stable perovskites;
  • Perovskites/Si tandems;
  • Dilute nitrides;
  • CdTe-based thin-film solar cells;
  • Novel sulphide materials;
  • Organic solar cells;
  • Flexible photovoltaics;
  • Intermediate-band solar cells;
  • Multijunction solar cells;
  • Quantum well solar cells;
  • Quantum dot solar cells;
  • Copper–indium–gallium–selenide (CIGS)/Si tandems;
  • Hot-carrier solar cells;
  • Transparent contact layers;
  • Materials for concentrated PV;
  • Numerical modelling of advanced PV materials and structures.

Dr. Vesselin Donchev
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Solar cells
  • Homo- and hetero-junctions
  • Multijunctions
  • Tunnel junctions
  • Defects
  • Interfaces
  • Hole-transporting materials
  • Electron-transporting materials
  • Transparent conductive oxides
  • Anti-reflection coating
  • Power conversion efficiency
  • Fill factor
  • Open-circuit voltage
  • Short circuit current
  • Maximum power point
  • Long-term stability
  • Measurement protocol
  • Minority carrier diffusion length
  • Carrier lifetime
  • Carrier mobility

Published Papers (3 papers)

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Research

10 pages, 12358 KiB  
Article
Application of TiO2/Ag/TiO2 as an Ohmic Contact to an AlGaAs Layer in a GaAs Solar Cell
by Petko Vitanov, Malina Milanova, Hristosko Dikov and Nikolay Petkov
Energies 2023, 16(10), 4050; https://doi.org/10.3390/en16104050 - 12 May 2023
Viewed by 1061
Abstract
This paper investigates the possibility of using a nanolaminate TiO2/Ag/TiO2 structure as a transparent conductive coating on GaAs solar cells. A novel result is that this structure forms an Ohmic contact to Al-rich AlGaAs, which is used as a “window” [...] Read more.
This paper investigates the possibility of using a nanolaminate TiO2/Ag/TiO2 structure as a transparent conductive coating on GaAs solar cells. A novel result is that this structure forms an Ohmic contact to Al-rich AlGaAs, which is used as a “window” layer in GaAs-based solar cells. The TiO2/Ag/TiO2 structure is deposited by RF magnetron sputtering at room temperature. This nanolaminate coating has good optical and electrical properties: a high transmittance of 94% at 550 nm, a sheet resistance of 7 Ω/sq, and a figure of merit (FOM) of 105 × 10−3 Ω−1. These properties are the result of the presence of a discontinuous layer of Ag between two thin layers of TiO2. The morphology of a discontinuous layer of Ag nanogranules is confirmed by the observation of a cross-section of a sample with high-resolution transmission electron microscopy (HRTEM) and EDX analyses. Current–voltage diode characteristics of GaAs solar cells measured under standard test illumination at 1000 W/m2 are analyzed. The formation of an Ohmic contact is explained by the Fermi-level pinning effect caused by nanosized Ag particles in the nanolaminate TiO2/Ag/TiO2 structure. The obtained results demonstrate a new application of oxide−metal−oxide (OMO) coatings as Ohmic contacts to III-V compound semiconductors. Full article
(This article belongs to the Special Issue Advanced Materials and Structures for Photovoltaic Applications)
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13 pages, 8998 KiB  
Article
Enhancement in Efficiency of CIGS Solar Cell by Using a p-Si BSF Layer
by Meriem Chadel, Asma Chadel, Boumediene Benyoucef and Michel Aillerie
Energies 2023, 16(7), 2956; https://doi.org/10.3390/en16072956 - 23 Mar 2023
Cited by 3 | Viewed by 1639
Abstract
Copper–indium–gallium–diselenide Cu(In,Ga)Se2 (CIGS) is a semiconductor compound belonging to group I-III-VI, with a chalcopyrite crystal structure. CIGS is promising for the development of high-performance photovoltaic applications in terms of stability and conversion efficiency. It is one of the main candidates to rival [...] Read more.
Copper–indium–gallium–diselenide Cu(In,Ga)Se2 (CIGS) is a semiconductor compound belonging to group I-III-VI, with a chalcopyrite crystal structure. CIGS is promising for the development of high-performance photovoltaic applications in terms of stability and conversion efficiency. It is one of the main candidates to rival the efficiency and stability of conventional crystalline silicon cells, due to its high light absorption coefficient, lower material cost, and high stability. The limitation of its use is that CIGS integrates indium (In) and gallium (Ga), which are rare and expensive materials. The amount of these materials in the CIGS cell can be reduced by optimizing the thickness of the absorber. We show that the introduction of a layer of highly doped silicon in the structure of the solar cell between the absorber layer and the back surface field layer effectively allows for decreasing the thickness of the absorber. Within the same objective, we focus on the danger of cadmium in the CdS buffer layer. In the first optimizations, we replaced the n-type CdS buffer layer with a n-type Zn(O,S) buffer layer. For this work, we used a one-dimensional simulation program, named Solar Cell Capacitance Simulator in one Dimension (SCAPS-1D), to investigate this new CIGS solar cell structure. After optimization, a maximum conversion efficiency of 24.43% was achieved with a 0.2 μm CIGS absorber layer and a 1 µm Si BSF layer. Full article
(This article belongs to the Special Issue Advanced Materials and Structures for Photovoltaic Applications)
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9 pages, 1494 KiB  
Article
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
by Vesselin Donchev, Malina Milanova and Stefan Georgiev
Energies 2022, 15(18), 6563; https://doi.org/10.3390/en15186563 - 08 Sep 2022
Viewed by 1320
Abstract
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells. To avoid non-uniformity effects in the composition of these compounds with two [...] Read more.
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells. To avoid non-uniformity effects in the composition of these compounds with two or three different group-V volatile elements, the crystallization was carried out from finite melt with a thickness of 0.5 mm at low (<560 °C) temperatures. X-ray microanalysis and X-ray diffraction were used to determine the composition, lattice mismatch, and crystalline quality of the epitaxial layers. The morphology and surface roughness were examined by atomic force microscopy. Surface photovoltage (SPV) spectroscopy at room temperature was applied to study the optical absorption properties and the photocarrier transport in the samples. The long-wavelength photosensitivity of the GaAsSbN and GaAsSb layers, determined from their SPV spectra, is extended down to 1.2 eV. Although GaAsSb has a slightly larger lattice mismatch with the GaAs substrate compared to GaAsSbN, it presents a higher photoresponse, since, in GaAsSbN, the incorporation of N induces additional recombination centres. Therefore, GaAsSb could be an alternative to GaAsSbN for solar cell applications. Full article
(This article belongs to the Special Issue Advanced Materials and Structures for Photovoltaic Applications)
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