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Electronics
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Microwave/Millimeter-Wave Power Amplifiers
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Microwave/Millimeter-Wave Power Amplifiers

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (15 June 2023) | Viewed by 5494

Special Issue Editor

Dr. Jung-Dong Park

E-Mail Website
Guest Editor
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
Interests: millimeter-wave/(sub) terahertz integrated circuits; power amplifiers; phased array systems; radars
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Remote sensing and wireless communications systems, along with their related RF components, have witnessed tremendous development during the past decades. Among these, the solid-state power amplifier (SSPA) has been considered one of the most critical blocks in developing highly efficient transceivers in the microwave, millimeter-wave, and terahertz regimes. Combined with the advancement of electronic device technology, significant design efforts need to be continuously invested in developing various types of power amplifiers in different technologies to satisfy the stringent technological requirements in developing cost-effective and high-performance transceivers for different types of sensing and communication systems.

This Special Issue focuses on the analysis, design, and implementation of solid-state power amplifiers and related technologies developed in CMOS, SiGe HBT, GaAs, InP, and GaN HEMT technologies at microwave, millimeter-wave, and terahertz range. The topics of interest include, but are not limited to:

  • Digital power amplifiers
  • Energy-efficient power amplifiers
  • High power amplifiers
  • Linearization schemes
  • Spatial power combining
  • Stability analysis
  • Switching power amplifiers
  • Wideband power amplifiers

Prof. Dr. Jung-Dong Park
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Microwave
  • millimeter-wave
  • terahertz
  • power amplifier
  • silicon technologies
  • III–V technologies

Published Papers (3 papers)

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Research

15 pages, 8547 KiB  
Article
High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands
by Hwann-Kaeo Chiou, Hsin-Chieh Lin and Da-Chiang Chang
Electronics 2023, 12(16), 3494; https://doi.org/10.3390/electronics12163494 - 17 Aug 2023
Cited by 2 | Viewed by 1136
Abstract
This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in [...] Read more.
This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%. Full article
(This article belongs to the Special Issue Microwave/Millimeter-Wave Power Amplifiers)
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19 pages, 5920 KiB  
Article
Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms
by Gokul Somasundaram, Jill C. Mayeda, Clint Sweeney, Donald Y. C. Lie and Jerry Lopez
Electronics 2023, 12(13), 2869; https://doi.org/10.3390/electronics12132869 - 28 Jun 2023
Cited by 3 | Viewed by 1205
Abstract
We demonstrate in this work effective linearization on a millimeter-wave (mm-Wave) broadband monolithic gallium nitride (GaN) power amplifier (PA) using digital predistortion (DPD). The PA used is a two-stage common-source (CS)/2-stack PA that operates in the mm-Wave 5G FR2 band, and it is [...] Read more.
We demonstrate in this work effective linearization on a millimeter-wave (mm-Wave) broadband monolithic gallium nitride (GaN) power amplifier (PA) using digital predistortion (DPD). The PA used is a two-stage common-source (CS)/2-stack PA that operates in the mm-Wave 5G FR2 band, and it is linearized with the generalized memory polynomial (GMP) DPD and tested using 4G (4th generation) long-term-evolution (LTE) 64-QAM (quadrature amplitude modulation) modulated signals with a PAPR (peak-to-average power ratio) of 8 dB. Measurement results after implementing GMP DPD indicate considerable broadband improvement in the adjacent channel leakage power ratio (ACLR) of 16.9 dB/17.3 dB/16.5 dB/15.1 dB at 24 GHz/28 GHz/37 GHz/39 GHz, respectively, with a common average POUT of 15 dBm using a 100 MHz LTE 64-QAM input signal. At a fixed frequency of 28 GHz, the GaN PA after GMP DPD achieved signal bandwidth-dependent ACLR improvement and root-mean-square (rms) EVM (error vector magnitude) reduction using 20 MHz/40 MHz/80 MHz/100 MHz LTE 64-QAM waveforms with a common average POUT of 15 dBm. The GaN PA thus achieved very good linearization results compared to that in other state-of-the-art mm-Wave PA DPD studies in the literature, suggesting that GMP DPD should be rather effective for linearizing mm-Wave 5G broadband GaN PAs to improve POUT, Linear. Full article
(This article belongs to the Special Issue Microwave/Millimeter-Wave Power Amplifiers)
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12 pages, 5305 KiB  
Article
A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology
by Van-Son Trinh, Jeong-Moon Song and Jung-Dong Park
Electronics 2022, 11(19), 3045; https://doi.org/10.3390/electronics11193045 - 24 Sep 2022
Cited by 2 | Viewed by 1999
Abstract
This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz amplifier consists of 14 stages of the cascaded common emitter (CE) amplifier which offers a [...] Read more.
This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz amplifier consists of 14 stages of the cascaded common emitter (CE) amplifier which offers a compact and improved-noise design due to the absence of the area-expensive and lossy baluns at such high frequencies. The interstage-matching network was flexibly constructed with two separate resonant tanks using metal–insulator–metal (MIM) capacitors and microstrip transmission lines (MSTLs) between each stage. The measured amplifier achieved a peak power gain of 10.9 dB at 283 GHz and a 3 dB gain of bandwidth of 30 GHz between 270 and 300 GHz. The peak output power of the amplifier was 0.8 dBm with an output of 1 dB gain compression point (OP1dB) of −3.6 dBm in simulation. The 14-stage amplifier consumes an area of 0.213 mm2, including all the pads. With the proposed interstage matching approach, a well-balanced 280 GHz amplifier has been demonstrated. The proposed design strategy is widely applicable to sub-THz receivers for future wireless communication systems. Full article
(This article belongs to the Special Issue Microwave/Millimeter-Wave Power Amplifiers)
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