Editorial

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3 pages, 183 KiB

Open AccessEditorial

Quantum and Optoelectronic Devices, Circuits and Systems

by Lucas Lamata

Electronics 2023, 12(7), 1717; https://doi.org/10.3390/electronics12071717 - 04 Apr 2023

Cited by 2 | Viewed by 1148

Abstract

The fields of quantum electronics (e [...] Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

Research

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14 pages, 4952 KiB

Open AccessArticle

Condition-Based Maintenance of an Anaerobic Reactor Using Artificial Intelligence

by Isaias Juárez-Barojas, Rubén Posada-Gómez, Alejandro Alvarado-Lassman and José Pastor Rodríguez-Jarquín

Electronics 2023, 12(4), 799; https://doi.org/10.3390/electronics12040799 - 05 Feb 2023

Cited by 1 | Viewed by 1188

Abstract

This paper proposes a condition-based maintenance system based on artificial intelligence for an online monitoring system of the support bed expansion in a 30-liter pilot-scale inverse fluidized bed reactor (IFBR). The main scope is to achieve a condition-based maintenance strategy using a single-level [...] Read more.

This paper proposes a condition-based maintenance system based on artificial intelligence for an online monitoring system of the support bed expansion in a 30-liter pilot-scale inverse fluidized bed reactor (IFBR). The main scope is to achieve a condition-based maintenance strategy using a single-level sensor for a biofilm inverse fluidizing bed as source for virtual sensors. The implementation of an artificial neural network was performed on an embedded electronic system (Raspberry Pi 4), both working together in real time. The signals estimated by the neural network are compared against the signals measured by the hardware sensors and, in case of detecting a failure in the physical measurement system, the artificial intelligence-based system then uses the signal estimated by the artificial neural network to maintain the correct operation of the IFBR. This system uses an artificial neural network to estimate the COD concentration of the effluent and the biogas production flow of a bioreactor, from the measurement of pH, the COD concentration of the influent, the inflow to the bioreactor and the signal coming from each of the conductivity sensors installed inside the reactor, which provide information about support media expansion in a pilot-scale inverse fluidized bed reactor. In addition, a fuzzy PI controller is presented, which was implemented in a Raspberry Pi electronic card, to regulate the COD concentration in the effluent of the bioreactor used as a case study. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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9 pages, 1820 KiB

Open AccessArticle

Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure

by Konstantin Moiseev, Eduard Ivanov and Yana Parkhomenko

Electronics 2023, 12(3), 609; https://doi.org/10.3390/electronics12030609 - 26 Jan 2023

Cited by 1 | Viewed by 1012

Abstract

The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range [...] Read more.

The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range of 77–300 K were investigated as a function of the surface density of nano-objects buried in the narrow-gap matrix. When applying the reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized electron-hole states of the InSb quantum dots, was revealed and recorded at low temperatures. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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14 pages, 2981 KiB

Open AccessArticle

Facile Green Preparation of Reduced Graphene Oxide Using Citrus Limetta-Decorated rGO/TiO₂ Nanostructures for Glucose Sensing

by Medha Gijare, Sharmila Chaudhari, Satish Ekar, Shoyebmohamad F. Shaikh, Rajaram S. Mane, Bidhan Pandit, Muhammad Usman Hassan Siddiqui and Anil Garje

Electronics 2023, 12(2), 294; https://doi.org/10.3390/electronics12020294 - 06 Jan 2023

Cited by 10 | Viewed by 1944

Abstract

The important electrochemical measurements of reduced graphene oxide-titanium oxide (rGO)/TiO₂) electrodes for the application of a glucose sensor are reported in the proposed work. Investigating the sensitivity, stability, and reproducibility of sensor electrodes that were made and used to evaluate the [...] Read more.

The important electrochemical measurements of reduced graphene oxide-titanium oxide (rGO)/TiO₂) electrodes for the application of a glucose sensor are reported in the proposed work. Investigating the sensitivity, stability, and reproducibility of sensor electrodes that were made and used to evaluate the concentration of glucose in the serum is one of the novel aspects of this work. This study presents the use of citrus limetta (sweet lime) fruit peel waste to synthesize a green reduction of graphene oxide (rGO). The rGO/TiO₂ composite obtained using the microwave heating method is applied for measuring the structural and morphological properties by various means. A conducting fluorine-tin oxide substrate is used to modify the enzymeless glucose sensor electrode. The electrochemical measurements of rGO/TiO₂ sensor electrodes are carried out using the technique of cyclic voltammetry. The rGO/TiO₂ sensor electrode exhibits a high sensitivity of 1425 µA/mM cm² towards glucose concentration in the range of 0.1 to 12 mM. The sensor was found to be extremely stable and repeatable with a response time of 5 s along with a minimum detection limit of 0.32 μM of glucose. The rGO/TiO₂ sensor shows relative standard deviation (RSD) of 1.14%, 1.34%, and 1.3% which reveals its excellent stability, repeatability, and reproducibility respectively. The sensor was used for glucose level detection in natural blood serum and shows an RSD of 1.88%. which is in good agreement with the commercial glucose sensor values. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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10 pages, 3405 KiB

Open AccessArticle

Fabrication and Characterization of Si/PEDOT: PSS-Based Heterojunction Solar Cells

by Ragavendran Venkatesan, Sheik Moideen Thaha Sheik Kadar Maideen, Saravanan Chandhiran, Sunil Singh Kushvaha, Suresh Sagadevan, Vishnukanthan Venkatachalapathy and Jeyanthinath Mayandi

Electronics 2022, 11(24), 4145; https://doi.org/10.3390/electronics11244145 - 12 Dec 2022

Cited by 5 | Viewed by 1311

Abstract

In this study, we fabricated a planar Si/PEDOT: PSS heterojunction solar cell using three different solvents—ethylene glycol, acetonitrile, and dimethyl sulfoxide—to find the best one. The fabricated samples were characterized by diffuse reflectance spectroscopy, scanning electron microscopy, X-ray diffraction, and current–voltage. Diffused reflectance [...] Read more.

In this study, we fabricated a planar Si/PEDOT: PSS heterojunction solar cell using three different solvents—ethylene glycol, acetonitrile, and dimethyl sulfoxide—to find the best one. The fabricated samples were characterized by diffuse reflectance spectroscopy, scanning electron microscopy, X-ray diffraction, and current–voltage. Diffused reflectance spectrum analysis showed reduced reflectance compared to the bare silicon wafers. The absorbance spectrum shows the change in absorption of the Si-coated PEDOT: PSS which was more than a 50% increase in the UV region, and for the EG sample, there was a 20% increase in the entire visible spectrum. This indicates that the solvent plays a major role in the bandgap between the Si and Si/PEDOT: PSS. Scanning electron microscope (SEM) was used to examine the surface morphology of Si/PEDOT: PSS as agglomerated, island-formed surfaces and carbon-layered Si-PEDOT: PSS. Cross-sectional images show the thickness of the PEDOT: PSS layer on the silicon wafer surface. The X-ray diffraction (XRD) pattern shows the characteristic peaks for silicon (69.5°), and Si/PEDOT: PSS shows a forbidden Si (200) peak at 32°. Current–voltage measurements have shown the characteristic diode curve for all fabricated cells. This characteristic diode curve indicated the presence of a heterojunction. Ethylene glycol-containing cells showed current output as 0.2 μA with V_oc of 0.2 V. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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9 pages, 2212 KiB

Open AccessFeature PaperArticle

Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures

by Sergey Balakirev, Natalia Chernenko, Natalia Kryzhanovskaya, Nikita Shandyba, Danil Kirichenko, Anna Dragunova, Sergey Komarov, Alexey Zhukov and Maxim Solodovnik

Electronics 2022, 11(23), 4062; https://doi.org/10.3390/electronics11234062 - 06 Dec 2022

Cited by 4 | Viewed by 1394

Abstract

We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size [...] Read more.

We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) at larger wavelengths are found in the spectra of samples with quantum dots overgrown at a low arsenic pressure. We attributed this phenomenon to the high-pressure suppression of atom diffusion between InAs islands at the overgrowth stage, which makes it possible to preserve the initial unimodal size distribution of quantum dots. The same overgrowth of quantum dots at the low arsenic pressure induces intensive mass transfer, which leads to the formation of arrays of quantum dots with larger sizes. Integrated photoluminescence intensity at 300 K is found to be lower for quantum dots overgrown at the higher arsenic pressure. However, a difference in the photoluminescence intensity for the high- and low-pressure overgrowths is not so significant for a temperature of 77 K. This indicates that excess arsenic incorporates into the capping layer at high arsenic pressures and creates numerous nonradiative recombination centers, diminishing the photoluminescence intensity. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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19 pages, 3415 KiB

Open AccessArticle

Development of Quantum Protocol Modification CSLOE–2022, Increasing the Cryptographic Strength of Classical Quantum Protocol BB84

by Larissa V. Cherckesova, Olga A. Safaryan, Alexey N. Beskopylny and Elena Revyakina

Electronics 2022, 11(23), 3954; https://doi.org/10.3390/electronics11233954 - 29 Nov 2022

Cited by 7 | Viewed by 1987

Abstract

Quantum cryptography protocols make it possible not only to ensure the protection of data transmitted in a communication channel from unauthorized access by intruders, but also to detect the existence of any attempted interception. This scientific direction is currently relevant, since it is [...] Read more.

Quantum cryptography protocols make it possible not only to ensure the protection of data transmitted in a communication channel from unauthorized access by intruders, but also to detect the existence of any attempted interception. This scientific direction is currently relevant, since it is related to the problem of security and data protection in current information and communication networks. The article is devoted to quantum cryptography; it describes the development of quantum protocols as quantum key distribution systems. Grounded on the laws of quantum mechanics, the elaboration of modifications of secure data transfer protocols is shown. The authors considered the best-known protocol to be BB84 of quantum key distribution; a more modern modification of this protocol is BB84 Info-Z. Comparative analysis of these has also been carried out. It has been established that the BB84-Info-Z quantum protocol works more efficiently than BB84 since its lower error threshold allows the interceptor to obtain much less information about the secret key. The authors put forward a new idea to improve the BB84 protocol (which has been quite outdated for almost 40 years), due to the increase in modern requirements for quantum cryptography protocols. The modification is called CSLOE-2022. It enables significant intensification of cryptographic strength and the entanglement degree of the interceptor (cryptanalyst), which greatly complicates the very possibility of intercepting information. The ultimate goal of the CSLOE-2022 modification is to complicate the eavesdropping process so much that it can be considered completely useless for an attacker in terms of wasting time and resources. The modification allows exceeding the known speed limit of key generation without repeaters since it uses two sources, the phases of which, in addition to the hundreds of kilometers of fiber between them, are very difficult to stabilize. Comparison of the protocols by working distance showed that for BB84, this distance does not exceed 70 km; for BB84-Info-Z it is similar, at no more than 70 km, and the modification of CSLOE-2022 proposed by the authors theoretically allows increasing the working distance of the quantum protocol to 511 km (7.3 times). Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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10 pages, 7502 KiB

Open AccessArticle

Investigation of Charge Transport Properties in VTP: PC71BM Organic Schottky Diode

by Nur Adilah Roslan, Azzuliani Supangat and Suresh Sagadevan

Electronics 2022, 11(22), 3777; https://doi.org/10.3390/electronics11223777 - 17 Nov 2022

Cited by 5 | Viewed by 1493

Abstract

In this work, the charge transport properties of organic vanadyl 3,10,17,24-tetra-tert-butyl-1,8,15,22-tetrakis(dimethylamino)-29H,31H phthalocyanine (VTP) were investigated. The I-V profile demonstrated by single VTP shows a rectifying behavior, and Schottky diode parameters such as the ideality factor, barrier height, shunt, and series resistance were calculated. [...] Read more.

In this work, the charge transport properties of organic vanadyl 3,10,17,24-tetra-tert-butyl-1,8,15,22-tetrakis(dimethylamino)-29H,31H phthalocyanine (VTP) were investigated. The I-V profile demonstrated by single VTP shows a rectifying behavior, and Schottky diode parameters such as the ideality factor, barrier height, shunt, and series resistance were calculated. Further, the charge transport behavior of single-layer VTP and its blend with phenyl C71 butyric acid methyl ester (PC₇₁BM) was evaluated using the I-V conventional method and diode analysis. In addition, the optimized diode properties of VTP: PC₇₁BM were chosen to evaluate its photovoltaic effect. The current density-voltage (J-V) characteristics were evaluated in both dark and light conditions to determine the key parameters of the photovoltaic effect. The results indicate the optimized VTP: the PC₇₁BM composite blend yielded a relatively low photovoltaic efficiency. However, due to the presence of extended ligands, it gives a very good sensitivity when applied in the organic photodetector device, as reported in our previous work. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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13 pages, 7861 KiB

Open AccessArticle

K-Shaped Silicon Waveguides for Logic Operations at 1.55 μm

by Amer Kotb and Kyriakos E. Zoiros

Electronics 2022, 11(22), 3748; https://doi.org/10.3390/electronics11223748 - 15 Nov 2022

Cited by 4 | Viewed by 1181

Abstract

Silicon has properties that make it the preferable semiconductor material for realizing a wide suite of electronic devices. In this paper, all basic optical logic operations, including XOR, AND, OR, NOT, NOR, XNOR, and NAND, are demonstrated by means of simulation using K-shaped [...] Read more.

Silicon has properties that make it the preferable semiconductor material for realizing a wide suite of electronic devices. In this paper, all basic optical logic operations, including XOR, AND, OR, NOT, NOR, XNOR, and NAND, are demonstrated by means of simulation using K-shaped compact silicon waveguides operated at the 1.55 μm telecommunications wavelength. This waveguide comprises three waveguide strips, all made of silicon printed on silica. By adjusting the phase of the incident beams, the pursued logic operations can be realized. To evaluate how well the considered operations are performed, the contrast ratio (CR) is employed as a figure of merit. Compared to other reported waveguides, the suggested K-shaped waveguide achieves higher CRs and a speed of the order of 120 Gb/s. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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10 pages, 4677 KiB

Open AccessArticle

Investigation of Barrier Layer Effect on Switching Uniformity and Synaptic Plasticity of AlN Based Conductive Bridge Random Access Memory

by Srikant Kumar Mohanty, Kuppam Poshan Kumar Reddy, Chien-Hung Wu, Po-Tsung Lee, Kow-Ming Chang, Prabhakar Busa and Yaswanth Kuthati

Electronics 2022, 11(21), 3432; https://doi.org/10.3390/electronics11213432 - 23 Oct 2022

Cited by 3 | Viewed by 2240

Abstract

In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion of Cu ions in the [...] Read more.

In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion of Cu ions in the AlN switching layer, hence controlling the formation of metallic conductive filament in the host layer. The device operated at a very low operating voltage with a V_set of 0.6 V and a V_reset of 0.4 V. The spatial and temporal switching variability were reduced significantly by inserting a barrier layer. The worst-case coefficient of variations (σ/µ) for HRS and LRS are 33% and 18%, respectively, when barrier layer devices are deployed, compared to 167% and 33% when the barrier layer is not present. With a barrier layer, the device exhibits data retention behavior for more than 10⁴ s at 120 °C, whereas without a barrier layer, the device fails after 10³ s. The device demonstrated synaptic behavior with long-term potentiation/depression (LTP/LTD) for 30 epochs by stimulating with a train of identical optimized pulses of 1 µs duration. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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11 pages, 843 KiB

Open AccessArticle

An Analysis of Some Properties and the Use of the Twist Map for the Finite Frenkel–Kontorova Model

by Wolfgang Quapp and Josep Maria Bofill

Electronics 2022, 11(20), 3295; https://doi.org/10.3390/electronics11203295 - 13 Oct 2022

Cited by 2 | Viewed by 946

Abstract

We discuss the twist map, with a special interest in its use for the finite Frenkel–Kontorova model. We explain the meaning of the tensile force in some proposed models. We demonstrate that the application of the twist map for the finite FK model [...] Read more.

We discuss the twist map, with a special interest in its use for the finite Frenkel–Kontorova model. We explain the meaning of the tensile force in some proposed models. We demonstrate that the application of the twist map for the finite FK model is not correct, because the procedure ignores the necessary boundary conditions. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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9 pages, 2681 KiB

Open AccessArticle

Rational Distributed Bragg Reflector Design for Improving Performance of Flip-Chip Micro-LEDs

by Yuechang Sun, Lang Shi, Peng Du, Xiaoyu Zhao and Shengjun Zhou

Electronics 2022, 11(19), 3030; https://doi.org/10.3390/electronics11193030 - 23 Sep 2022

Cited by 2 | Viewed by 1925

Abstract

The distributed Bragg reflector (DBR) has been widely used in flip-chip micro light-emitting diodes (micro-LEDs) because of its high reflectivity. However, the conventional double-stack DBR has a strong angular dependence and a narrow reflective bandwidth. Here, we propose a wide reflected angle Ti [...] Read more.

The distributed Bragg reflector (DBR) has been widely used in flip-chip micro light-emitting diodes (micro-LEDs) because of its high reflectivity. However, the conventional double-stack DBR has a strong angular dependence and a narrow reflective bandwidth. Here, we propose a wide reflected angle Ti₃O₅/SiO₂ DBR (WRA-DBR) for AlGaInP-based red and GaN-based green/blue flip-chip micro-LEDs (RGB flip-chip micro-LEDs) to overcome the drawbacks of the double-stack DBR. The WRA-DBR consisting of six sub-DBRs has high reflectivity within the visible light wavelength region at an incident angle of light ranging from 0° to 60°. Furthermore, the influence of the WRA-DBR and double-stack DBR on performances of RGB flip-chip micro-LEDs is numerically investigated based on the finite-difference time-domain method. Owing to higher reflectivity and less angular dependence of the WRA-DBR, the RGB flip-chip micro-LEDs with the WRA-DBR have a stronger electric field intensity in the top side in comparison with RGB flip-chip micro-LEDs with the double-stack DBR, which indicates that more photons can be extracted from micro-LEDs with the WRA-DBR. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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Review

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19 pages, 2157 KiB

Open AccessFeature PaperReview

Recent Progress of Non-Cadmium and Organic Quantum Dots for Optoelectronic Applications with a Focus on Photodetector Devices

by Hasan Shabbir and Marek Wojnicki

Electronics 2023, 12(6), 1327; https://doi.org/10.3390/electronics12061327 - 10 Mar 2023

Cited by 8 | Viewed by 3269

Abstract

Quantum dots (QDs) are zero-dimensional (0D) nanomaterials with charge confinement in all directions that significantly impact various applications. Metal-free organic quantum dots have fascinating properties such as size-dependent bandgap tunability, good optical absorption coefficient, tunability of absorption and emission wavelength, and low-cost synthesis. [...] Read more.

Quantum dots (QDs) are zero-dimensional (0D) nanomaterials with charge confinement in all directions that significantly impact various applications. Metal-free organic quantum dots have fascinating properties such as size-dependent bandgap tunability, good optical absorption coefficient, tunability of absorption and emission wavelength, and low-cost synthesis. Due to the extremely small scale of the materials, these characteristics originated from the quantum confinement of electrons. This review will briefly discuss the use of QDs in solar cells and quantum dots lasers, followed by a more in-depth discussion of QD application in photodetectors. Various types of metallic materials, such as lead sulfide and indium arsenide, as well as nonmetallic materials, such as graphene and carbon nanotubes, will be discussed, along with the detection mechanism. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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20 pages, 2375 KiB

Open AccessFeature PaperReview

Hybrid Quantum Dot as Promising Tools for Theranostic Application in Cancer

by Javed Ahmad, Anuj Garg, Gulam Mustafa, Mohammad Zaki Ahmad, Mohammed Aslam and Awanish Mishra

Electronics 2023, 12(4), 972; https://doi.org/10.3390/electronics12040972 - 15 Feb 2023

Cited by 7 | Viewed by 2416

Abstract

Cancer is one of the leading causes of death worldwide. In the last few decades, cancer treatment has come a long way, but multidrug resistance (MDR) in cancer still has low survival rates. It means that much research is required for an accurate [...] Read more.

Cancer is one of the leading causes of death worldwide. In the last few decades, cancer treatment has come a long way, but multidrug resistance (MDR) in cancer still has low survival rates. It means that much research is required for an accurate diagnosis and effective therapy. The new era of cancer research could include theranostic approaches and targeted delivery of chemotherapeutic agents utilizing the nanoparticulate system. Recently, there has been much interest gained among researchers for carbon-based and graphene-based quantum dots due to their higher biocompatibility and ease of biofunctionalization compared to conventional heavy metal quantum dots. Moreover, these quantum dots have various interesting utilities, including bioimaging, biosensing, quantum dots-mediated drug delivery, and their role in photodynamic therapy (PDT) and photothermal therapy (PTT). The current review highlighted the utility of hybrid quantum dots as a theranostic system in different cancers and discussed the various bio-molecules conjugated hybrid quantum dots investigated for diagnostic/therapeutic applications in cancer. The influence of conjugation of different biomolecules, such as folic acid, PEG, etc., with hybrid quantum dots on their biopharmaceutical attributes (such as aqueous solubility, tumor penetrability, stability of loaded therapeutics in the tumor microenvironment), delivery of drugs specifically to tumor tissues, and its therapeutic outcome in different cancer has also been discussed. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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23 pages, 4590 KiB

Open AccessReview

Recent Advances in the Characterized Identification of Mono-to-Multi-Layer Graphene and Its Biomedical Applications: A Review

by Nargish Parvin, Vineet Kumar, Sang Woo Joo, Sang-Shin Park and Tapas Kumar Mandal

Electronics 2022, 11(20), 3345; https://doi.org/10.3390/electronics11203345 - 17 Oct 2022

Cited by 11 | Viewed by 2112

Abstract

The remarkable mechanical, electrical, and thermal capabilities of monolayer graphene make it a wonder substance. As the number of layers in graphene flakes increases to few-layer graphene (number of layers ≤ 5) and multi-layer graphene (number of layers ≤ 10), its properties are [...] Read more.

The remarkable mechanical, electrical, and thermal capabilities of monolayer graphene make it a wonder substance. As the number of layers in graphene flakes increases to few-layer graphene (number of layers ≤ 5) and multi-layer graphene (number of layers ≤ 10), its properties are affected. In order to obtain the necessary qualities, it is crucial to manage the number of layers in the graphene flake. Therefore, in the current review, we discuss the various processes for producing mono- and few-/multi-layer graphene. The impact of mono-/few-/multi-layer graphene is then assessed with regard to its qualities (including mechanical, thermal, and optical properties). Graphene possesses unique electrical features, such as good carrier mobility, typical ambipolar behaviour, and a unique energy band structure, which might be employed in field effect transistors (FETs) and utilized in radio frequency (RF) circuits, sensors, memory, and other applications. In this review, we cover graphene’s integration into devices for biomolecule detection as well as biomedical applications. The advantages of using graphene in each situation are explored, and samples of the most cutting-edge solutions for biomedical devices and other applications are documented and reviewed. Full article

(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems)

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