Wide Bandgap Semiconductor: From Epilayer to Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 31 August 2024 | Viewed by 7237

Special Issue Editors

Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: solid-state lighting devices; solar cells; power device; HEMT; flexible electronics; optoelectronics; nitride and oxide semiconductor MOCVD growths
Special Issues, Collections and Topics in MDPI journals
Department of Electrical and Electronic Engineering, University of Cagliari, Cagliari, Italy
Interests: reliability; degradation mechanisms; failure analysis; microelectronics; semiconductor devices; counterfeit electronics
Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan
Interests: MOCVD; thin films; GaAs; semiconductor device physics; epitaxy
International College of Semiconductor Technology, National Chiao Tung University (NCTU), Hsinchu City 30010, Taiwan
Interests: single event effect (SEE) in semiconductor devices; electrostatic discharge (ESD) and transient voltage suppressors (TVS); power semiconductor devices
Nanomaterials Science Unit, Thin Film Physics Division, Department of Physics, Chemistry, and Biology, Linköping University, 58183 Linköping, Sweden
Interests: materials science; physical vapor deposition; magnetron sputter epitaxy; molecular beam epitaxy; nitride semiconductors; thin films; nanostructures; nanodevices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

According to the U.S. Department of Energy’s Advanced Research Project Agency for Energy, by 2030, 80 % of electricity will flow through a power electronic device. Power electronic devices are competent in controlling and converting electrical power consumption and are utilized in home appliances, automotives, industries, defense system, aerospace, renewable energy systems, and utility systems.  In the modern world, energy-efficient reliable electronic devices are inevitable to reduce power consumption. Recently, wide bandgap (WBG) semiconductors have emerged as potential candidates for next-generation power electronic devices with advantages such as larger operating temperature, energy efficiency, high carrier mobility, high critical breakdown fields, faster switching, and high radiation resistance. Silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), aluminum nitride (AlN), and diamond WBG power electronics devices are facilitating the miniaturization of devices with more reliability and efficiency.

The present Special Issue of Electronics is planned as a collection of reviews and research articles on the epitaxy of WBG semiconductors and devices related to the area. The potential topics of interests include but are not limited to research on epitaxy, simulations, characterizations, and devices of SiC, GaN, Ga2O3, AlN, and diamond.

Prof. Dr. Ray-Hua Horng
Dr. Giovanna Mura
Prof. Dr. Qixin Guo
Prof. Dr. Chin-Han(King) Chung
Dr. Ching-Lien Hsiao
Guest Editors

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Keywords

  • wide bandgap
  • power device
  • SiC
  • GaN
  • Ga2O3
  • diamond

Published Papers (4 papers)

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Research

11 pages, 7013 KiB  
Communication
Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates
by Ray-Hua Horng, Hsiao-Yun Yeh and Niall Tumilty
Electronics 2023, 12(9), 2033; https://doi.org/10.3390/electronics12092033 - 27 Apr 2023
Viewed by 1292
Abstract
Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved [...] Read more.
Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 105 to 4.03 × 108). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor: From Epilayer to Devices)
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14 pages, 5772 KiB  
Article
A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance
by Jaeyeop Na and Kwangsoo Kim
Electronics 2023, 12(1), 92; https://doi.org/10.3390/electronics12010092 - 26 Dec 2022
Cited by 2 | Viewed by 2019
Abstract
This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that were divided horizontally; the channel diode operated through the [...] Read more.
This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that were divided horizontally; the channel diode operated through the dummy gate and the p-base and N+ source regions at the bottom of the dummy gate. Because the bult-in channel diode was positioned at the bottom, the DTMCD-MOSEFT minimized static deterioration. Despite having a 5.2% higher specific on-resistance (Ron-sp) than a double-trench MOSFET (DT-MOSFET), the DTMCD-MOSFET exhibited a significantly superior body diode and switching properties. In comparison to the DT-MOSFET, its turn-on voltage (VF) and reverse recovery charge (Qrr) were decreased by 27.2 and 30.2%, respectively, and the parasitic gate-drain capacitance (Crss) was improved by 89.4%. Thus, compared with the DT-MOSFET, the total switching energy loss (Etot) was reduced by 41.4%. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor: From Epilayer to Devices)
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14 pages, 31614 KiB  
Article
Analysis of DC-Side Snubbers for SiC Devices Application
by Mei Liang, Jiwen Chen and Pengyu Jia
Electronics 2022, 11(23), 3874; https://doi.org/10.3390/electronics11233874 - 23 Nov 2022
Viewed by 1331
Abstract
Due to parasitic parameters existing in Silicon Carbide (SiC) devices application, SiC devices have poor turn-off performances. SiC diode and SiC MOSFET have severe turn-off overvoltage and oscillation. The DC-side snubber is one simple suppressing method. The simplest circuit is the high-frequency decoupling [...] Read more.
Due to parasitic parameters existing in Silicon Carbide (SiC) devices application, SiC devices have poor turn-off performances. SiC diode and SiC MOSFET have severe turn-off overvoltage and oscillation. The DC-side snubber is one simple suppressing method. The simplest circuit is the high-frequency decoupling capacitor in parallel with the bridge leg. However, choosing the component value is empirical. Based on the turn-off terminal impedances of the SiC diode and the SiC MOSFET, the suppressing mechanism of this DC-side snubber is analyzed. The guideline selection for the component value is provided. Furthermore, the DC-side snubber with a damping resistor is analyzed based on the terminal impedances. The design principles are provided. Finally, the validity and effectiveness of the DC-side snubbers were proven based on the double-pulse test platform. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor: From Epilayer to Devices)
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13 pages, 3635 KiB  
Article
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET
by Mei Liang, Jiwen Chen, Jinchao Bai, Pengyu Jia and Yuzhe Jiao
Electronics 2022, 11(20), 3268; https://doi.org/10.3390/electronics11203268 - 11 Oct 2022
Cited by 1 | Viewed by 1720
Abstract
High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage drops across the common-source inductor and the displacement current of the gate-drain capacitor [...] Read more.
High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage drops across the common-source inductor and the displacement current of the gate-drain capacitor of the OFF-state switch induce a spurious pulse on its gate-source voltage. This paper proposes a new gate driver using two Bipolar Junction Transistors (BJTs) and one diode to connect the gate terminal of SiC MOSFET and the negative driver voltage, which provides a low impedance path to bypass the displacement current of the gate-drain capacitor when crosstalk issues occur. The simulation results prove the proposed driver is valid on suppressing the crosstalk issue. The comparisons between the prior drivers and the proposed driver show the superiority of the proposed driver. Finally, the proposed gate driver is successfully implemented and experimentally verified on a 1.1 kW synchronous buck prototype. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor: From Epilayer to Devices)
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