Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.7
2.9
Journals
Electronics
Special Issues
Advanced Thermal Management of Integrated Electronic Devices
share announcement

Advanced Thermal Management of Integrated Electronic Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (15 December 2023) | Viewed by 2620

Special Issue Editors

Dr. Bin Xie

E-Mail Website
Guest Editor
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: advanced thermal management technology; flexible electronics and integration; energy conversion and utilization
Dr. Bofeng Shang

E-Mail Website
Guest Editor
School of Physics, Zhengzhou University, Zhengzhou 450001, China
Interests: advanced packaging and thermal management technology; flexible phase change materials; thermal modeling and simulation

Special Issue Information

Dear Colleagues,

With the rising power density and ever-shrinking size of electronic devices, thermal issues related to the high junction temperature of chips are becoming rather severe. Thermal management is essential for boosting both the performance and stability of integrated electronic devices. Especially, third-generation semiconductor-based HEMTs, IGBTs, lasers, 3D-stacked chips, etc., are now desperate for efficient and compact thermal management solutions to maintain a safe junction temperature. Fortunately, advanced thermal management strategies, thermal characterization methods, and thermal modeling and analyzing approaches have been rapidly developed within the past decade.

This Special Issue is intended to present research papers and review articles that report on the recent advances in thermal management of integrated electronic devices, including thermal materials, heat dissipation system designs, thermal characterizations, thermal transport analysis, and thermal modeling. The topics covered in this Special Issue include, but are not limited to:

  • Emerging thermal interfacial materials
  • Advanced thermal characterization techniques
  • New concepts in thermal management of electronic devices
  • Forced air and liquid cooling techniques
  • Phase change materials
  • Thermal modeling and simulations
  • Thermal reliability analysis of integrated electronic devices
  • Chip-level thermal management
  • Liquid Metal and its system design
  • Energy conversion and management

Dr. Bin Xie
Dr. Bofeng Shang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • junction temperature
  • heat dissipation
  • thermal theroies
  • thermal characterization
  • liquid cooling
  • phase change materials
  • liquid metals
  • structural design

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

14 pages, 6229 KiB  
Article
Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages
by Liting Deng, Te Li, Zhenfu Wang, Pu Zhang, Shunhua Wu, Jiachen Liu, Junyue Zhang, Lang Chen, Jiachen Zhang, Weizhou Huang and Rui Zhang
Electronics 2024, 13(1), 203; https://doi.org/10.3390/electronics13010203 - 02 Jan 2024
Viewed by 843
Abstract
The reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at [...] Read more.
The reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at the interface between the die attach and the heat sink plays a critical role in thermal management of high-power laser diode packages. This paper focuses on the investigation of interface contact thermal resistance of the die attach using thermal transient analysis. The structure function of the heat flow path in the T3ster thermal resistance testing experiment is utilized. By analyzing the structure function of the transient thermal characteristics, it was determined that interface thermal resistance between the chip and solder was 0.38 K/W, while the resistance between solder and heat sink was 0.36 K/W. The simulation and measurement results showed excellent agreement, indicating that it is possible to accurately predict the interface contact area of the die attach in the F-mount packaged single emitter laser diode. Additionally, the proportion of interface contact thermal resistance in the total package thermal resistance can be used to evaluate the quality of the die attach. Full article
(This article belongs to the Special Issue Advanced Thermal Management of Integrated Electronic Devices)
►▼ Show Figures

Figure 1

11 pages, 2337 KiB  
Article
Guidelines for Area Ratio between Metal Lines and Vias to Improve the Reliability of Interconnect Systems in High-Density Electronic Devices
by Tae Yeong Hong, Sarah Eunkyung Kim, Jong Kyung Park and Seul Ki Hong
Electronics 2023, 12(21), 4403; https://doi.org/10.3390/electronics12214403 - 25 Oct 2023
Viewed by 854
Abstract
This research was conducted in the context of the semiconductor market, with a demand for high-performance and highly integrated semiconductor systems that simultaneously enhance performance and reduce chip size. Scaling down the metal line and via in back-end-of-line (BEOL) structures is essential to [...] Read more.
This research was conducted in the context of the semiconductor market, with a demand for high-performance and highly integrated semiconductor systems that simultaneously enhance performance and reduce chip size. Scaling down the metal line and via in back-end-of-line (BEOL) structures is essential to efficiently deliver power to scaling down devices. This study utilized the finite element method (FEM) simulation technique to model the heat and current distribution for enhancing the efficiency of scaled-down structures. Due to current flow bottlenecks, an increase in the area ratio of the via to metal line (as the via becomes relatively smaller) leads to a temperature rise due to Joule heating. This trend follows a second-degree polynomial form, and the point where the temperature doubles compared to when the area ratio is one is situated at an area ratio of three. The temperature increase caused by Joule heating ultimately leads to destruction of the via, which directly affects the reliability of the BEOL structure. These experimental results can provide guidelines for designing with reliability considerations in mind, particularly in today’s semiconductor systems where significant scaling down is required in interconnect structures. They can also be widely applied to research aimed at developing interconnect structures that enhance reliability. Full article
(This article belongs to the Special Issue Advanced Thermal Management of Integrated Electronic Devices)
►▼ Show Figures

Figure 1

10 pages, 3618 KiB  
Article
Thermal and Optical Analysis of Quantum-Dot-Converted White LEDs in Harsh Environments
by Naiqi Pei, Xuan Yang, Bin Xie and Xiaobing Luo
Electronics 2023, 12(18), 3844; https://doi.org/10.3390/electronics12183844 - 11 Sep 2023
Viewed by 508
Abstract
Quantum-dot-converted white LEDs (QD-WLEDs) are promising in both lighting and display applications owing to their high luminous efficiency (LE) and high color-rendering index (CRI). However, their working lifetime is severely limited by the poor reliability of QDs and the LED package. In this [...] Read more.
Quantum-dot-converted white LEDs (QD-WLEDs) are promising in both lighting and display applications owing to their high luminous efficiency (LE) and high color-rendering index (CRI). However, their working lifetime is severely limited by the poor reliability of QDs and the LED package. In this work, the variation in photothermal parameters in QD-WLEDs during aging was investigated, and the effect of QDs and the LED package on the optical performance of QD-WLEDs was analyzed. First, the optical properties of phosphor–silicone, QD–silicone, and silicone were measured during the 524 h aging process at 80 °C and 100 °C, respectively. QD-WLEDs with high optical performance were packaged and aged under the same conditions to investigate the variation in their optical parameters and analyze the trends of their CRIs and correlated color temperatures (CCTs). According to the experimental results and the calculation models of the spectra, it was found that the changes in optical parameters are mainly caused by the degradation of QDs, and the aging of QDs has different effects on the CRI and CCT. The analysis of the energy-transfer process shows that the decrease in luminous flux of QD-WLEDs during the aging process is mainly caused by the aging of silicone. Based on optical and thermal analysis, this study proposed different optimization strategies for optical quality and lifetime in the LED design process. Full article
(This article belongs to the Special Issue Advanced Thermal Management of Integrated Electronic Devices)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop