Special Issue "The Future of Memristors: Models, Technologies, Circuits and Applications"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (15 August 2023) | Viewed by 157

Special Issue Editors

1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
2. Zhejiang Lab, Hangzhou 311121, China
Interests: emerging memory; circuit design; hardware security; in-memory computing
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
Interests: memristive neural network; cross-layer co-optimization; high parallel computing hardware and algorithms

Special Issue Information

Dear Colleagues,

Memristor, which is the fourth fundamental circuit element, was first mathematically explored by Leon Chua in 1971. After that, since Stanley Williams’ research group successfully implemented the first practical device in 2008, memristor continues to gain attraction and various materials have been studied for memristor fabrication. These days, the advantages of the memristor are better understood, such as nonvolatility, low switching latency, high density, and low power dissipation. Some memristive materials also exhibit high silicon compatibility. These appealing properties of memristor have attracted a large number of studies on memristor applications in different fields, including nonvolatile memory, neuromorphic systems, processing-in-memory, edge computing, sensors, and security, which also presents great potential for memristor.

However, compared to the other fundamental devices, the understanding of memristor is still far from mature and its subsequent development requires careful evaluation. In this Special Issue, we are inviting researchers to present their investigations and analysis on the future of memristor. We are interested in theoretical approaches and simulation modeling that accurately defines modern memristor devices, novel materials, and physics, memristor-based circuit designs, and promising application field analysis for memristor devices as well as its future challenges.


(1) Memristor/RRAM memory application, as well as its applications in the areas of computing-in-memory, machine learning, hardware security, neuromorphic computing, etc.

(2) Novel integration schemes, novel circuit design schemes, and novel architectures based on memristor.

(3) Memristor materials, devices, physics, reliability, array-/chip-level characterizations and demonstrations. 

(4) Modeling and simulation of memristor and memristor-based computing systems. 

Technical Program Committee Member:

Name: Ms. Yue Cao
Affiliation: Senior Engineer, Zhejiang Lab, Hangzhou 311121, China
Research Interests: in memory computing; digital circuit; memory design

Dr. Jianguo Yang
Prof. Dr. Chunmeng Dou
Guest Editors

Manuscript Submission Information

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  • memristor modeling
  • fabrication technology of memristor
  • resistive memory circuit
  • memristor devices as synapses and neurons
  • near/in-memory computing
  • memristor-based signal processing
  • computing-in-memory processor
  • memristive sensors hardware security

Published Papers

There is no accepted submissions to this special issue at this moment.
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