Special Issue "Radiation Tolerant Digital and Analog Circuits and Systems"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (20 September 2023) | Viewed by 1441

Special Issue Editors

Department of Electrical & Computer Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada
Interests: radiation effects in microelectronics; radiation tolerant digital and analog circuits and systems; fault tolerant neural networks; silicon reliability; biomedical sensors
Prof. Dr. Haibin Wang
E-Mail Website
Guest Editor
College of Internet of Things Engineering, Hohai University, Changzhou 210098, China
Interests: radiation effects in electric circuits and systems; radiation hardening technique development of ASIC, FPGA, and ICs
Dr. Kai Xi
E-Mail Website
Guest Editor
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Interests: radiation effects in electric circuits and systems; nonvolatile memories
Beijing Microelectronics Technology Institute, Beijing 100076, China
Interests: radiation effects in CMOS devices, integrated circuits and power devices; radiation hardening design and radiation hardness assurance
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
Interests: radiation effects in microelectronics; radiation hardened design; radiation damage simulation

Special Issue Information

Dear Colleagues,

Global demand for radiation-tolerant digital and analog circuits has increased dramatically in recent years. This demand is mainly driven by the vast growth in space applications ranging from satellite communication, surveillance, and instrumentations with the rise of New Space and Space 2.0. New custom radiation-tolerant electronics are needed, and more validation and qualification strategies are required for off-the-shelf components. In addition, there is increased demand for high-reliability electronics in the automobile industry, data servers and switches, high-energy physics experiments and many terrestrial nuclear applications. The electronics in these applications must be radiation-hardened to enable them to function effectively in those environments. As a result, the research on radiation-tolerant electronics has increased rapidly, resulting in many interesting approaches to modelling radiation effects and developing radiation-hardened digital and analog integrated circuits. The advanced CMOS integrated circuit technologies (FDSOI and FinFET processes) have improved single event upset performance, however, the total dose effects need to be further explored to meet the demands of various radiation environments. In addition, the growing complexity of microelectronics, such as highly integrated SOC and FPGAs, imposes significant challenges in radiation hardness assurance with multiple components, mixed signals and mixed technologies at the system level. New testing paradigms and verification methods are required to reduce the cost in verification. Pulsed lasers have shown their effectiveness in evaluating sensitive areas, however, the correlation between the laser and heavy ion cross-sections still remains a challenge for two-photon lasers.

The main aim of this Special Issue is to seek high-quality submissions that highlight emerging applications of radiation-tolerant systems, address recent breakthroughs in modeling radiation effects in advanced electronic devices and circuits, present designs of radiation-hardened digital, analog, mixed-signal, and RF integrated circuits, and radiation hardness testing methodologies. The topics of interest include, but are not limited to:

  • Basic mechanisms of radiation effects in electronic devices;
  • Compact modeling of radiation effects and circuit/layout level optimization (TID and SEE);
  • Radiation effects in power devices/circuits;
  • Design of radiation-hardened integrated circuits (analog/RF/mixed-signal/digital);
  • Radiation hardening and fault tolerance in FPGAs;
  • Radiation hardness assurance testing.

Prof. Dr. Li Chen
Prof. Dr. Haibin Wang
Dr. Kai Xi
Dr. Liang Wang
Dr. Rui Chen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • radiation effect
  • total ionizing dose effect
  • single-event effect
  • spacecraft charging
  • radiation hardening
  • digital and analog circuits
  • integrated circuit
  • radiation environment
  • hardness assurance
  • pulsed laser

Published Papers (1 paper)

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Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping
Electronics 2023, 12(5), 1214; https://doi.org/10.3390/electronics12051214 - 03 Mar 2023
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Single-event transient (SET)-induced soft errors are becoming a more significant threat to the reliability of electronic systems in space, especially for advanced technologies. The SET pulse width, which is vulnerable to SET propagation, is a critical parameter for developing SET mitigation techniques. This [...] Read more.
Single-event transient (SET)-induced soft errors are becoming a more significant threat to the reliability of electronic systems in space, especially for advanced technologies. The SET pulse width, which is vulnerable to SET propagation, is a critical parameter for developing SET mitigation techniques. This paper investigates the pulse-broadening effect in the process of SET propagation in logic circuits and the SET-sensitive region distribution in the layout using the pulsed-laser mapping technique in logic circuits implemented with 28 nm Ultra-Thin Body and BOX (UTBB) FDSOI technology. The experiments were carried out at the Naval Research Laboratory (NRL) to measure the SET-induced errors and map the SET-sensitive region distribution at various clock frequencies and laser energy levels. The results illustrate that the number of errors increases with the clock frequency and energy for combinational logic circuits and that the flip-flop SEU rate is less sensitive to clock frequency. The SET pulse-broadening effect was also observed using SET mapping for an OR gate chain at different laser energy levels. In addition, the simulation results revealed the mechanism of the SET pulse-broadening effect in an OR gate chain. Full article
(This article belongs to the Special Issue Radiation Tolerant Digital and Analog Circuits and Systems)
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