Editorial Board for section 'Semiconductor Devices'
- Microelectronics Section
- Optoelectronics Section
- Industrial Electronics Section
- Power Electronics Section
- Bioelectronics Section
- Microwave and Wireless Communications Section
- Computer Science & Engineering Section
- Networks Section
- Systems & Control Engineering Section
- Circuit and Signal Processing Section
- Semiconductor Devices Section
- Artificial Intelligence Section
- Electrical and Autonomous Vehicles Section
- Flexible Electronics Section
- Electronic Multimedia Section
- Electronic Materials Section
Please see the section webpage for more information on this section.
Please note that the order in which the Editors appear on this page is alphabetical, and follows the structure of the editorial board presented on the MDPI website under information for editors: editorial board responsibilities.
Members
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: solid-state lighting devices; solar cells; power device; HEMT; flexible electronics; optoelectronics; Nitride and oxide semiconductor MOCVD growths
* Section “Semiconductor Devices”
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Interests: solid-state lighting devices; solar cells; power device; HEMT; flexible electronics; optoelectronics; Nitride and oxide semiconductor MOCVD growths
* Section “Semiconductor Devices”
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Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125 Modena, Italy
Interests: RF and power GaN HEMTs design and characterization; III-V devices reliability; numerical simulations
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Interests: RF and power GaN HEMTs design and characterization; III-V devices reliability; numerical simulations
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Department of Engineering, Università degli studi Roma Tre, 00154 Roma, Italy
Interests: design, fabrication and characterization of electronic and optoelectronic devices; compatible with silicon technology and relevant to sensing; optical communications and imaging. It includes the synthesis, modeling and characterization of novel materials and nanomaterials for device applications (SiGe alloys and superlattices, group IV and III-V semiconductors, colloidal quantum dots). Other research fields are gas sensors, photovoltaics and optical countermeasures in the mid-infrared
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Interests: design, fabrication and characterization of electronic and optoelectronic devices; compatible with silicon technology and relevant to sensing; optical communications and imaging. It includes the synthesis, modeling and characterization of novel materials and nanomaterials for device applications (SiGe alloys and superlattices, group IV and III-V semiconductors, colloidal quantum dots). Other research fields are gas sensors, photovoltaics and optical countermeasures in the mid-infrared
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Dipartimento di Scienze e Metodi Dell’Ingegneria, Università di Modena e Reggio Emilia and Centro Interdipartimentale En&Tech, Via Amendola 2 Padiglione Morselli, I-42122 Reggio Emilia, Italy
Interests: first principles calculations of the structural electronic and optical properties of solid state systems through a density functional theory approach; system of interest: semiconductors, in particular silicon based nanostructures
Interests: first principles calculations of the structural electronic and optical properties of solid state systems through a density functional theory approach; system of interest: semiconductors, in particular silicon based nanostructures
Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy
Interests: solid state devices; wide bandgap semiconductors; silicon photonics; numerical simulation; power electronics; energy harvesting
Interests: solid state devices; wide bandgap semiconductors; silicon photonics; numerical simulation; power electronics; energy harvesting
Institute of Microelectronics, Electromagnetism and Photonics (IMEP-LaHC), University of Grenoble-Alpes, CNRS, Grenoble, France
Interests: physics of advanced materials and solid state devices; defect spectroscopy; electrical characterization; oxide/semiconductorinterface; silicon and III-V semiconductor devices; transistor devices; solar energy material; thin film solar cells
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Interests: physics of advanced materials and solid state devices; defect spectroscopy; electrical characterization; oxide/semiconductorinterface; silicon and III-V semiconductor devices; transistor devices; solar energy material; thin film solar cells
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School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706, USA
Interests: semiconductor materials; electronic devices; nanomaterials; energy storage
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Interests: semiconductor materials; electronic devices; nanomaterials; energy storage
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Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Interests: III-V semiconductor materials and devices; infrared semiconductors; III-V infrared phtodetectors; semiconductor lasers
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Interests: III-V semiconductor materials and devices; infrared semiconductors; III-V infrared phtodetectors; semiconductor lasers
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Korea Institute of Energy Technology, School of Energy Technology, Naju 58330, Republic of Korea
Interests: thin film photovoltaics; power semiconductor devices; THz technologies
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Interests: thin film photovoltaics; power semiconductor devices; THz technologies
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Electronic and Electrical Engineering, Swansea University, Swansea SA2 8PP, UK
Interests: silicon carbide; gallium nitride; silicon power electronics
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Interests: silicon carbide; gallium nitride; silicon power electronics
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School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
Interests: electronics; semiconductor; polymer; processing; energy; nanotechnology
Interests: electronics; semiconductor; polymer; processing; energy; nanotechnology
Department of Electronic Engineering, Inha University, Incheon 22212, Republic of Korea
Interests: CMOS/CMOS-compatible logic devices; emerging memory devices; processing-in-memory; neuromorphic system
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Interests: CMOS/CMOS-compatible logic devices; emerging memory devices; processing-in-memory; neuromorphic system
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School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea
Interests: thin film transistor; oxide semiconductor; device processing; nano-material device; device reliability; artificial synapse device
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Interests: thin film transistor; oxide semiconductor; device processing; nano-material device; device reliability; artificial synapse device
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Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Interests: wide bandgap semiconductors materials and devices
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Interests: wide bandgap semiconductors materials and devices
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Solid State Lighting Lab, School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
Interests: LEDs and µ-LEDs; Compound semiconductor device fabrication; Growth and fabrication of III-Nitrides; Optical and Structural Properties of Nitride Materials; Compound-semiconductor-based thin film solar cells
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Interests: LEDs and µ-LEDs; Compound semiconductor device fabrication; Growth and fabrication of III-Nitrides; Optical and Structural Properties of Nitride Materials; Compound-semiconductor-based thin film solar cells
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National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania
Interests: group IV quantum dots; silicon-germanium; germanium-tin; silicon-germanium-tin; germanium nanocrystals; nanocrystals embedded in dielectrics; high-k gate oxides; hafnium dioxide; titanium dioxide; magnetron sputtering; electrical, charge storage and photoelectric properties; ferroelectric HfO2; SWIR bandgap of group IV alloys; group IV photonics; nonvolatile memories; quantum confinement; localized states; Raman spectroscopy
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Interests: group IV quantum dots; silicon-germanium; germanium-tin; silicon-germanium-tin; germanium nanocrystals; nanocrystals embedded in dielectrics; high-k gate oxides; hafnium dioxide; titanium dioxide; magnetron sputtering; electrical, charge storage and photoelectric properties; ferroelectric HfO2; SWIR bandgap of group IV alloys; group IV photonics; nonvolatile memories; quantum confinement; localized states; Raman spectroscopy
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Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 10084, China
Interests: Non-imaging optics; Freeform optics; Dielectric metasurface optics; III-V semiconductor Lasers; Distributed feedback lasers (DFB); solid-state lighting devices; LEDs
Interests: Non-imaging optics; Freeform optics; Dielectric metasurface optics; III-V semiconductor Lasers; Distributed feedback lasers (DFB); solid-state lighting devices; LEDs
Institute of Applied Electrodynamics and Telecommunications, Vilnius University, 10257 Vilnius, Lithuania
Interests: terahertz electronics; semiconductor devices
Interests: terahertz electronics; semiconductor devices
Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Interests: semiconductor device physics; wide- and ultra-wide bandgap semiconductors; high frequency microwave and millimeter wave devices; power switching devices; semiconductor nanomanufacturing and nanofabric
Interests: semiconductor device physics; wide- and ultra-wide bandgap semiconductors; high frequency microwave and millimeter wave devices; power switching devices; semiconductor nanomanufacturing and nanofabric
Faculty of Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
Interests: compound semiconductor materials and devices; resonant tunneling diodes; MMIC; MEMS; sensors
Interests: compound semiconductor materials and devices; resonant tunneling diodes; MMIC; MEMS; sensors
Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy
Interests: nanoelectronic devices; electronic systems
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Interests: nanoelectronic devices; electronic systems
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Department of Electrical and Electronic Engineering, University of Cagliari, Cagliari, Italy
Interests: reliability; degradation mechanisms; failure analysis; microelectronics; semiconductor devices; counterfeit electronics
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Interests: reliability; degradation mechanisms; failure analysis; microelectronics; semiconductor devices; counterfeit electronics
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Lukasiewicz Research Network, Institute of Microelectronics and Photonics (SBL-IMiF), 02-668 Warszawa, Poland
Interests: Micro- and nanotechnology of wide bandgap semiconductors; GaN-based devices RF and high power application; II-VI oxide semiconductors for sensors
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Interests: Micro- and nanotechnology of wide bandgap semiconductors; GaN-based devices RF and high power application; II-VI oxide semiconductors for sensors
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Department of Electronics and Computer Technology, Science Faculty, Granada University, Avda. Fuente Nueva s/n 18071, Granada, Spain
Interests: resistive RAMs and memristors physical simulation and compact modeling; simulation and modeling of nanometric conventional and multigate devices; CMOS photodiodes and giant magnetoresistance current sensors
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Interests: resistive RAMs and memristors physical simulation and compact modeling; simulation and modeling of nanometric conventional and multigate devices; CMOS photodiodes and giant magnetoresistance current sensors
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School of Electrical Engineering, College of Engineering, Korea University, Seoul, Korea
Interests: silicon semiconductor devices; cache memory design; ultra-low-voltage device design; SRAM yield enhancement
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Interests: silicon semiconductor devices; cache memory design; ultra-low-voltage device design; SRAM yield enhancement
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Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
Interests: carbon nanotube and graphene electronics; new memory devices (PRAM, RRAM, CBRAM); new image sensor (thermal); nechanical to electrical energy conversion; thermal to electrical energy conversion; environmental energy (heat/wind) driven energy saving system design; piezoelectricity; flexible supercapacitor; phase change material for latent heat driven energy storage
Interests: carbon nanotube and graphene electronics; new memory devices (PRAM, RRAM, CBRAM); new image sensor (thermal); nechanical to electrical energy conversion; thermal to electrical energy conversion; environmental energy (heat/wind) driven energy saving system design; piezoelectricity; flexible supercapacitor; phase change material for latent heat driven energy storage
Department of Telecommunications and Teleinformatics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw, Poland
Interests: mid infrared photonics; light sources; modelling and design of photonic devices; DWDM systems
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Interests: mid infrared photonics; light sources; modelling and design of photonic devices; DWDM systems
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Department of Engineering, University of Ferrara, 44122 Ferrara, Italy
Interests: III-V and wide band-gap transistors; non linear and high-frequency device characterization and measurements; transistor compact modeling; micro- and millimeter-wave power amplifier design
Interests: III-V and wide band-gap transistors; non linear and high-frequency device characterization and measurements; transistor compact modeling; micro- and millimeter-wave power amplifier design
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
Interests: films; nanocrystalline; semiconductor
Interests: films; nanocrystalline; semiconductor
Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, UK
Interests: semiconductor materials and devices; photonics; electronics; integration of photonics and electronics; solar energy materials
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Interests: semiconductor materials and devices; photonics; electronics; integration of photonics and electronics; solar energy materials
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