Dear Colleagues,

Both molecular beam epitaxy (MBE) and metalorganic vapour phase epitaxy (MOVPE) are the most often employed techniques for the deposition of semiconductor heterostructures. Using them, complex micro- and nanoelectronic as well as optoelectronic devices can be fabricated (e.g. high-electron-mobility transistors, quantum cascade lasers, infrared and UV detectors, etc.). The continuous development of these methods aids in revealing new scientific trends. It allows for elimination or alleviation of the material limitations leading to new perspective applications. The most compelling example may be the development of vertical (external) cavity semiconductor lasers or infrared/UV detectors. Bandgap engineering of III-V semiconductors led to the coverage of a broad range of the infrared spectrum, while the III-Ns covered the visible and UV range. The features of MBE and MOVPE have made fabrication of complex devices a reality. Presently, both the lattice strain and interface physics are the most important and fundamental areas of the heterostructure technology, namely their deposition and fabrication of the devices based on them. The generation of defects is directly related to lattice relaxation. The difficulty of the interface issue was best described by W. Pauli, who said “God created the solid-state bulk, and Devil made its surface”. Taking into account that a few hundred interfaces can be present in the heterostructure, their quality rather than that of the bulk material is more significant for device performance. It led us to the conclusion that there is still room for investigation of the unexplored and improvement of modern devices based on semiconductor heterostructures.

Prof. Dr. Ray-Hua Horng
Dr. Agata Jasik
Prof. Dr. Younes Hanifehpour
Prof. Dr. Hao-chung Kuo
Dr. Daniela Gogova
Guest Editors

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• Molecular beam epitaxy of III-V structures (based on GaAs, InP, GaSb, GaN, AlN, InN and related alloys) and III-Ns (AlN, GaN, InN and related alloys)
• Metalorganic vapor phase epitaxy of III-V structures (based on GaAs, InP, GaSb, GaN, AlN, InN and related alloys) and III-Ns (AlN, GaN, InN and related alloys)
• The strain relaxation in III-V and in III-Ns heterostructures
• The interface formation in III-V and in III-Ns heterostructures
• Defect generation in III-V and in III-Ns heterostructures
• The influence of strain relaxation on device performance
• The influence of interface quality on device performance.