Research

Open AccessArticle

Excited Non-Local Microelongated Semiconductor Layer Thermal-Optical Mechanical Waves Affected by Rotational Field

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Crystals 2023, 13(1), 116; https://doi.org/10.3390/cryst13010116 - 09 Jan 2023

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Abstract

The main goal of this research is to provide a novel model that describes an optically heated layer of an excited non-local microelongated semiconductor material. In a rotating field, the model is examined as the photo-excitation processes occur. The model presents the microelongation [...] Read more.

The main goal of this research is to provide a novel model that describes an optically heated layer of an excited non-local microelongated semiconductor material. In a rotating field, the model is examined as the photo-excitation processes occur. The model presents the microelongation scalar function, which describes the microelement processes according to the micropolar-thermoelasticity theory. The model analyses the interaction situation between optical-thermomechanical waves under the impact of rotation parameters when the microelongation parameters are taken into consideration according to the photo-thermoelasticity theory. During the electronic and thermoelastic deformation, the fundamental governing equations were obtained in dimensionless form, and they were investigated using the harmonic wave methodology. Two-dimensional general solutions for the fundamental fields of an isotropic, homogeneous, and linear non-local microelongated semiconductor medium are derived (2D). The free surface of the medium is subjected to several conditions to produce complete solutions due to the laser pulse. The physical properties of silicon (Si) material are used to show numerical modeling of the main fields. Some comparisons are made and graphically shown under the impact of various relaxation time and rotational parameters. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

A Stochastic Thermo-Mechanical Waves with Two-Temperature Theory for Electro-Magneto Semiconductor Medium

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Crystals 2023, 13(1), 82; https://doi.org/10.3390/cryst13010082 - 02 Jan 2023

Cited by 1 | Viewed by 722

Abstract

This paper investigates an uncommon technique by using the influence of the random function (Weiner process function), on a two-temperature problem, at the free surface of the semiconducting medium, by using the photo-thermoelasticity theory. Using the Silicon material as an example of a [...] Read more.

This paper investigates an uncommon technique by using the influence of the random function (Weiner process function), on a two-temperature problem, at the free surface of the semiconducting medium, by using the photo-thermoelasticity theory. Using the Silicon material as an example of a semiconducting medium under the influence of a magnetic field, the novel model can be formulated. To make the problem more logical, the randomness of the Weiner process function is aged to the governing stochastic equation. A combining stochastic process with the boundary of the variables is studied. In this case, the stochastic and deterministic solutions were obtained for all physical quantities. The additional noise is regarded as white noise. The problem is investigated according to a two-dimensional (2D) deformation. The normal mode method can be used mathematically to obtain numerically the deterministic, stochastic, and variance solutions of all physical quantities. Three sample paths are obtained by making a comparison between the stochastic and deterministic distributions of the field variables. The impacts of adding randomization to the boundary conditions are highlighted. The numerical results are shown graphically and discussed in consideration of the two-temperature parameter effect. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

Moisture Photo-Thermoelasticity Diffusivity in Semiconductor Materials: A Novel Stochastic Model

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Crystals 2023, 13(1), 42; https://doi.org/10.3390/cryst13010042 - 26 Dec 2022

Cited by 1 | Viewed by 940

Abstract

A unique methodology due to the effect of stochastic heating is utilized to study the Moisture Diffusivity influence of an elastic semiconductor medium under the effect of photo-thermoelasticity theory. Accurately, random processes are applied at the boundary of the semiconductor medium. The governing [...] Read more.

A unique methodology due to the effect of stochastic heating is utilized to study the Moisture Diffusivity influence of an elastic semiconductor medium under the effect of photo-thermoelasticity theory. Accurately, random processes are applied at the boundary of the semiconductor medium. The governing equations are expressed in the one-dimensional form (1D). The boundary conditions are considered random; the additional noise is regarded as white noise. The problem is set up to investigate the interaction between moisture diffusivity, thermo-elastic waves, and plasma waves. The investigation is carried out during a photothermal transport procedure while taking moisture diffusivity into consideration. The Laplace transform is used to solve the problem. The numerical solution for field distribution is obtained using the short-time approximation while performing inverse transformations of Laplace. The Wiener process notion has been used to arrive at the solutions for the stochastic case. Silicon (Si) material is used along several sample paths in a numerical study based on stochastic simulation. Additionally, a comparison of the stochastic and deterministic field variable distributions is provided. The effects of thermoelectric, thermoelastic, and reference moisture parameters of the applied force on all physical distributions are discussed graphically. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

Two-Temperature Semiconductor Model Photomechanical and Thermal Wave Responses with Moisture Diffusivity Process

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Crystals 2022, 12(12), 1770; https://doi.org/10.3390/cryst12121770 - 06 Dec 2022

Cited by 5 | Viewed by 893

Abstract

In the context of the two-temperature thermoelasticity theory, a novel mathematical–physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The two-dimensional (2D) Cartesian coordinate is used to study the coupling between the thermo-elastic plasma waves and moisture [...] Read more.

In the context of the two-temperature thermoelasticity theory, a novel mathematical–physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The two-dimensional (2D) Cartesian coordinate is used to study the coupling between the thermo-elastic plasma waves and moisture diffusivity. Dimensionless quantities are taken for the main physical fields with some initial conditions in the Laplace transform domain. The linear solutions are obtained analytically along with unknown variables when some conditions are loaded at the surface of the homogenous medium according to the two-temperature theory. The Laplace transform technique in inversion form is utilized with some numerical algebraic approximations in the time domain to observe the exact expressions. Due to the effects of the two-temperature parameter and moisture diffusivity, the numerical results of silicon material have been introduced. The impacts of thermoelectric, thermoelastic, and reference moisture parameters are discussed graphically with some physical explanations. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

Hall Current Effect of Magnetic-Optical-Elastic-Thermal-Diffusive Non-Local Semiconductor Model during Electrons-Holes Excitation Processes

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Crystals 2022, 12(11), 1680; https://doi.org/10.3390/cryst12111680 - 21 Nov 2022

Cited by 7 | Viewed by 956

Abstract

This paper investigates a theoretical model for the interaction between electrons and holes (E/H) in elastic non-local semiconductors. When the medium is activated by photo-energy because of high temperatures, an optical-elastic-thermal-diffusion (OETD) process occurs and is described by this mathematical-physical model. A study [...] Read more.

This paper investigates a theoretical model for the interaction between electrons and holes (E/H) in elastic non-local semiconductors. When the medium is activated by photo-energy because of high temperatures, an optical-elastic-thermal-diffusion (OETD) process occurs and is described by this mathematical-physical model. A study is conducted on the impact of the Hall current brought on by the collapse of a strong magnetic field on the exterior of the non-local semiconductor medium. A Hall effect is brought on by the magnetic field’s effect on the density of magnetic flux. The Laplace transform with initial conditions of the dimensionless main physical fields in one dimension (1D) is used to demonstrate this. Mathematically, in the Laplace domain, the generic linear solutions for the strain and temperature distributions, as well as charge carrier holes and electrons, are derived. The key physical fields’ complete solutions in the time domain are obtained by numerically simulating a few thermal, mechanical, and optical conditions at the free surface of the semiconductor using the Laplace inverse approximation technique. For silicon material, the photo-thermoelasticity theory’s Hall current effect, non-local parameter, and effects of thermal relaxation durations are graphically displayed and analyzed. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

Dynamic Properties of Non-Autonomous Femtosecond Waves Modeled by the Generalized Derivative NLSE with Variable Coefficients

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Crystals 2022, 12(11), 1627; https://doi.org/10.3390/cryst12111627 - 13 Nov 2022

Cited by 2 | Viewed by 668

Abstract

The primary purpose of this study is to analyze non-autonomous femtosecond waves with various geometrical configurations correlated to the generalized derivative nonlinear Shrödinger equation (NLSE) with variable coefficients. Numerous academic publications, especially in nonlinear optics, material science, semiconductor, chemical engineering, and many other [...] Read more.

The primary purpose of this study is to analyze non-autonomous femtosecond waves with various geometrical configurations correlated to the generalized derivative nonlinear Shrödinger equation (NLSE) with variable coefficients. Numerous academic publications, especially in nonlinear optics, material science, semiconductor, chemical engineering, and many other fields, have looked into this model since it is closer to real-world situations and has more complex wave structures than models with constant coefficients. It can serve as a reflection for the slowly altering inhomogeneities, non-uniformities, and forces acting on boundaries. New complex wave solutions in two different categories are proposed: implicit and elliptic (or periodic or hyperbolic) forms are obtained for this model via the unified method. Indeed, the innovative wave solutions that were achieved and reported here are helpful for investigating optical communication applications as well as the transmission characteristics of light pulses. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

A Novel Model of Semiconductor Porosity Medium According to Photo-Thermoelasticity Excitation with Initial Stress

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Crystals 2022, 12(11), 1603; https://doi.org/10.3390/cryst12111603 - 10 Nov 2022

Cited by 1 | Viewed by 680

Abstract

Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for [...] Read more.

Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for the fundamental variables in two dimensions are obtained using the Laplace–Fourier transforms method in two dimensions (2D). Physical fields such as temperature, carrier concentration, normal displacement, and change in volume fraction field can all be solved analytically. The plasma of electrons, thermal load, and mechanical boundary conditions at the porosity medium’s free surface are used to show certain illustrations. The context of the Laplace–Fourier transformation inversion operations yields complete solutions. To complete the numerical simulation and compare several thermal memories under the influence of the porosity parameters, silicon (Si), a semiconductor porosity material, is used. The main physical variables are described and graphically displayed with the new parameters. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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Open AccessArticle

A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature

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Crystals 2022, 12(10), 1458; https://doi.org/10.3390/cryst12101458 - 16 Oct 2022

Cited by 2 | Viewed by 768

Abstract

In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of [...] Read more.

In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically. Full article

(This article belongs to the Special Issue Research in 2D Semiconductor Materials)

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