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Special Issue "Wide-Bandgap Semiconductor Materials, Devices and Systems"

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A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 31 December 2023 | Viewed by 4764

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Special Issue Editors

Prof. Dr. Hongyu Yu

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Guest Editor

School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
Interests: wide bandgap semiconductor device and system integration; cmos; novel ultra-high density memory and electronic ceramics

Prof. Dr. Qing Wang

E-Mail Website
Guest Editor

School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
Interests: GaN devices and power system; GaN RF devices and the PA module

Special Issue Information

Dear Colleagues,

We are glad to run a Special Issue with Crystals. We invite you to share your impressive and distinctive research works with us, and will truly appreciate your contribution.

This Special Issue is titled ‘Wide-Bandgap Semiconductor Materials, Devices and Systems’, and the materials include but are not limited to GaN, Ga₂O₃, SiC, ZnO, AlN, and diamond. More specifically, the scope of this Issue covers five common key technological research topics for the study of material properties, device performance and system design of wide-bandgap semiconductors. The topics of interest are as follows: Material epitaxy (epitaxial structure design, advanced epitaxial methods, material and electrical characterization, etc.); microelectronic fabrication processes (etching process research, ohmic contact improvement, breakdown voltage enhancement, gate dielectric engineering, etc.); novel device design and application (monolithic integrated devices, vertical devices, multi-gate devices, sensors, ferroelectric devices, etc.); semiconductor device physics (device reliability, failure analysis, modeling, etc.); and advanced system integration (power supply systems, power amplifier architecture, circuit efficiency improvement, advanced packaging, etc.). The above topics are just for your reference. Any related topics not mentioned above are also acceptable for this Special Issue.

We would be grateful if we received your manuscripts before 30 June 2023, which will leave sufficient time for the review stage. The peer review committee will carefully consider each manuscript and reply to you as soon as possible. If you have any questions, please do not hesitate to contact us.

Prof. Dr. Hongyu Yu
Prof. Dr. Qing Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

wide bandgap semiconductor
materials growth and applications
advanced process technology
group III-V power electronics and RF devices
novel materials and devices
device design and modeling
semiconductor device physics
RF devices and power electronics reliability
RF circuit, system and module
advanced packaging and packaging trends

Published Papers (4 papers)

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Research

Open AccessArticle

A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)

and

Crystals 2023, 13(4), 650; https://doi.org/10.3390/cryst13040650 - 10 Apr 2023

Viewed by 1205

Abstract

Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss. Full article

(This article belongs to the Special Issue Wide-Bandgap Semiconductor Materials, Devices and Systems)

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Open AccessArticle

Pressure Sensing of Symmetric Defect Photonic Crystals Composed of Superconductor and Semiconductor in Low-Temperature Environment

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Crystals 2023, 13(3), 471; https://doi.org/10.3390/cryst13030471 - 09 Mar 2023

Viewed by 602

Abstract

We theoretically investigate the defect mode transmittance of light waves in superconductor–semiconductor photonic crystals and its pressure-sensing dependence. The photonic crystal is composed of alternating superconducting and semiconducting slabs and a defect locates at the center of this structure. Two trapezoid waveguides are fixed at both sides of the crystal, which induces the hydrostatic pressure applied and beams transmitted simultaneously. The resonant wavelength variation in the defect mode is directly proportional to the pressure applied on the system in the near-IR region, which can be utilized for linear pressure sensors in the cryogenic environment. Pressure sensitivity reaches a high value of 2.6 nm/GPa, which is higher than that in the study based on the reflection spectra. The sensitivity coefficient may be modulated by the environment temperature as well. This study has potential regarding pressure-light-wave sensors. Full article

(This article belongs to the Special Issue Wide-Bandgap Semiconductor Materials, Devices and Systems)

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Open AccessArticle

Temperature Sensing Based on Defect Mode of One-Dimensional Superconductor-Semiconductor Photonic Crystals

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Crystals 2023, 13(2), 302; https://doi.org/10.3390/cryst13020302 - 12 Feb 2023

Cited by 3 | Viewed by 1074

Abstract

Based on the transfer-matrix method, we theoretically explore the transmission and reflection properties of light waves in a one-dimensional defective photonic crystal composed of superconductor (HgBa₂Ca₂Cu₃O_8+δ) and semiconductor (GaAs) layers. The whole system is centrosymmetric and can generate a defect transmission peak in the photonic band gap. We study the effect of the temperature on the defect mode. Results obtained show that the defect mode shifts to the lower frequency regions as the value of the environmental temperature increases, and the resonance of the defect mode can be strengthened further as the number of periods increases. In addition, our findings reveal that the central wavelength of the defect mode increases with the increase in the environmental temperature and it presents a nearly linear relationship between the central wavelength of the defect mode and the temperature in cryogenic environments. Therefore, we can use the temperature response of the defect mode to detect the temperature. It is hoped that this study has potential applications for the development of cryogenic sensors with high sensitivity. Full article

(This article belongs to the Special Issue Wide-Bandgap Semiconductor Materials, Devices and Systems)

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Open AccessArticle

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

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Crystals 2023, 13(1), 110; https://doi.org/10.3390/cryst13010110 - 07 Jan 2023

Cited by 3 | Viewed by 1527

Abstract

In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with V_ds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of C_gs = 1.03 pF and C_gd = 0.13 pF than those of the GFP structure (i.e., C_gs = 1.89 pF and C_gd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (f_t) of 46 GHz and a maximum oscillation frequency (f_max) of 130 GHz than those of the GFP structure (i.e., f_t = 27 GHz and f_max = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices. Full article

(This article belongs to the Special Issue Wide-Bandgap Semiconductor Materials, Devices and Systems)

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Special Issue "Wide-Bandgap Semiconductor Materials, Devices and Systems"

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