Recent Advances in Nonlinear Optical Crystals

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 April 2023) | Viewed by 10951

Special Issue Editors

Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Interests: KBBF crystal and device; bulk crystal growth; optical properties and laser generation

E-Mail Website
Guest Editor
Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Interests: nonlinear optical materials; bulk crystal growth; optical properties and laser generation

Special Issue Information

Dear Colleagues,

Nonlinear optical crystals have played an important role in the frequency conversion process with the development of laser technology. Recently, all-solid-state deep-UV or middle-far infrared lasers based on frequency conversion process through nonlinear optical crystals have become a hot topic because of their important applications. For example, the 193 nm coherent lasers can meet the requirements of injection-seeding hybrid ArF excimer laser. The 177.3nm coherent laser based on KBBF-PCD has been successfully applied in angle-resolved photoemission spectroscopy. There is now only the KBBF crystal that is applicable for deep-UV laser generation by a direct second harmonic generation method which has inspired researchers to discover new deep-UV nonlinear optical materials. In the infrared region, most of those in practical use belong to the ABC2 chalcopyrite structure type, including AgGaQ2 (Q=S, Se) and ZnGeP, which also have shortcomings. It is also necessary for researchers to discover new infrared nonlinear optical materials. The main contribution of the present Special Issue is “Recent Advances in Nonlinear Optical Crystals”. We believe this issue is theoretically and practically needed at present to discover excellent nonlinear optical crystals for both deep-UV and middle-far infrared laser generation.

Dr. Lijuan Liu
Dr. Mingjun Xia
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • deep-UV nonlinear optical crystals
  • infrared nonlinear optical crystals
  • crystal growth and device fabrication
  • linear and nonlinear optical properties
  • laser generation by frequency conversion

Published Papers (5 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

10 pages, 1830 KiB  
Article
Synthesis, Crystal and Electronic Structures, Nonlinear Optical Properties, and Magnetic Properties of Two Thiophosphates: KInP2S7 and KCrP2S7
by Craig Cropek, Vivian Nguyen, Santosh Karki Chhetri, Jin Hu, Shengping Guo and Jian Wang
Crystals 2022, 12(11), 1505; https://doi.org/10.3390/cryst12111505 - 22 Oct 2022
Cited by 3 | Viewed by 2092
Abstract
Two thiophosphates, KInP2S7 and KCrP2S7, were structurally characterized without investigating any optical properties. Herein in this work, KInP2S7 and KCrP2S7 were revisited to investigate their optical and magnetic properties, respectively. [...] Read more.
Two thiophosphates, KInP2S7 and KCrP2S7, were structurally characterized without investigating any optical properties. Herein in this work, KInP2S7 and KCrP2S7 were revisited to investigate their optical and magnetic properties, respectively. Pure polycrystalline samples and crystals of KInP2S7 and KCrP2S7 were grown by high temperature solid state reactions, where mm-sized crystals of KCrP2S7 were collected. KCrP2S7 is isostructural to KInP2S7, which features a layered structure. KInP2S7 and KCrP2S7 possess close relationship to the layered thiophosphate M2P2S6 (M = Fe, Co, Zn, etc.). The bonding pictures of KInP2S7 were studied using the electron localization function (ELF) coupled with crystal orbital Hamilton population (COHP) calculations. The intrinsically distorted [PS4] tetrahedra and [InS6] octahedra are made by strong covalent P-S interactions and ionic In-S interactions, respectively. Electronic structure analysis confirmed that the optical properties of KInP2S7 are mainly contributed to by [PS4] tetrahedra together with small amounts of the contributions coming from [InS6] octahedra. Magnetic measurement on mm-sized crystals of KCrP2S7 verified that there is an antiferromagnetic transition around 21 K, and the Cr atoms are trivalent. KInP2S7 is predicated to be an indirect bandgap semiconductor of 2.38 eV, which is confirmed by the UV-Vis measurement of 2.4(1) eV. KInP2S7 is not a type-I phase-matching material and exhibits moderate second harmonic generation (SHG) response (0.51 × AgGaS2, sample of particle size of 100 µm). The laser damage threshold (LDT) of KInP2S7 is very high of 5.2 × AgGaS2. Bandgap engineering were undergone to enhance the SHG response of KInP2S7. Full article
(This article belongs to the Special Issue Recent Advances in Nonlinear Optical Crystals)
Show Figures

Figure 1

8 pages, 2785 KiB  
Article
Improved Growth Techniques for Nonlinear Optical Crystal CsB3O5 Based on the Investigation of Defects
by Jingcheng Feng, Yuwei Chen, Feidi Fan, Heng Tu, Guochun Zhang and Yicheng Wu
Crystals 2022, 12(10), 1487; https://doi.org/10.3390/cryst12101487 - 19 Oct 2022
Viewed by 1182
Abstract
Growth defects in CsB3O5 (CBO) crystals grown using the seed-submerged growth technique (SSGT), which includes parallel grouping, growth step, and inclusion, were observed and analyzed. Dislocation was investigated using the chemical etching method for the first time. Relationships between defects [...] Read more.
Growth defects in CsB3O5 (CBO) crystals grown using the seed-submerged growth technique (SSGT), which includes parallel grouping, growth step, and inclusion, were observed and analyzed. Dislocation was investigated using the chemical etching method for the first time. Relationships between defects and growth conditions are discussed, and ways to overcome growth defects are suggested. Using the cool-end compensation of thermocouples, a CBO crystal measuring 63 × 40 × 30 mm3 (weighing 190 g) was successfully grown using the SSGT. Adopting the top seeded solution growth (TSSG) method, a scattering centers-free CBO crystal measuring 75 × 52 × 46 mm3 (weighing 480 g) was obtained from the improved Cs2O–B2O3–MoO3 system with a molar ratio of (1–3):(1.5–3.5):(1–4), which is the largest CBO single crystal to date. Full article
(This article belongs to the Special Issue Recent Advances in Nonlinear Optical Crystals)
Show Figures

Figure 1

10 pages, 1979 KiB  
Article
Multispectral Anti-Reflection Coatings Based on YbF3/ZnS Materials on ZnGeP2 Substrate by the IBS Method for Mid-IR Laser Applications
by Mikhail Zinovev, Nikolay N. Yudin, Igor Kinyaevskiy, Sergey Podzyvalov, Vladimir Kuznetsov, Elena Slyunko, Houssain Baalbaki and Denis Vlasov
Crystals 2022, 12(10), 1408; https://doi.org/10.3390/cryst12101408 - 05 Oct 2022
Cited by 7 | Viewed by 1463
Abstract
A multispectral anti-reflective coating of high radiation strength for laser applications in the IR spectrum for nonlinear ZnGeP2 crystals has been developed for the first time. The coating was constructed using YbF3/ZnS. The developed coating was obtained by a novel [...] Read more.
A multispectral anti-reflective coating of high radiation strength for laser applications in the IR spectrum for nonlinear ZnGeP2 crystals has been developed for the first time. The coating was constructed using YbF3/ZnS. The developed coating was obtained by a novel approach using ion-beam deposition of these materials on a ZnGeP2 substrate. It has a high LIDT of more than 2 J/cm2. Optimal layer deposition regimes were found for high film density and low absorption, and good adhesion of the coating to the substrate was achieved. At the same time, there was no dissociation of the double compound under high-energy ions. Full article
(This article belongs to the Special Issue Recent Advances in Nonlinear Optical Crystals)
Show Figures

Figure 1

10 pages, 2148 KiB  
Article
Scalable Fabrication of Nanogratings on GaP for Efficient Diffraction of Near-Infrared Pulses and Enhanced Terahertz Generation by Optical Rectification
by Mohammad Bashirpour, Wei Cui, Angela Gamouras and Jean-Michel Ménard
Crystals 2022, 12(5), 684; https://doi.org/10.3390/cryst12050684 - 10 May 2022
Cited by 6 | Viewed by 3295
Abstract
We present a process flow for wafer-scale fabrication of a surface phase grating with sub-micron feature sizes from a single semiconductor material. We demonstrate this technique using a 110-oriented GaP semiconductor wafer with second-order nonlinearity to obtain a nanostructured device (800 nm lateral [...] Read more.
We present a process flow for wafer-scale fabrication of a surface phase grating with sub-micron feature sizes from a single semiconductor material. We demonstrate this technique using a 110-oriented GaP semiconductor wafer with second-order nonlinearity to obtain a nanostructured device (800 nm lateral feature size and a 245 nm height modulation) with applications relevant to near-infrared optical diffraction and time-resolved terahertz (THz) technologies. The fabrication process involves a plasma-enhanced chemical deposition of a SiO2 layer on the wafer followed by contact photolithography and inductively coupled plasma reactive ion etching (ICP-RIE). We discuss the required radiation dosage, exposure times, temperatures and other key parameters to achieve high-quality nanogratings in terms of filling ratio, edge profile, and overall shape. The phase-grating properties, such as the pitch, spatial homogeneity, and phase retardation, are characterized with an atomic force microscope, scanning electron microscope and a non-invasive optical evaluation of the optical diffraction efficiency into different orders. We demonstrate an application of this device in a time-domain THz spectroscopy scheme, where an enhanced THz spectral bandwidth is achieved by optical rectification of near-infrared laser pulses incident on the grating and efficiently diffracted into the first orders. Finally, the reported process flow has the potential to be applied to various materials by considering only slight adjustments to the ICP-RIE etching steps, paving the way to scalable fabrication of sub-micron patterns on a large range of substrates. Full article
(This article belongs to the Special Issue Recent Advances in Nonlinear Optical Crystals)
Show Figures

Figure 1

10 pages, 19290 KiB  
Article
Cd4InO(BO3)3: A New Nonlinear Optical Crystal Exhibiting Strong Second Harmonic Generation Effect and Moderate Birefringence
by Runqing Liu, Hongping Wu, Hongwei Yu, Zhanggui Hu, Jiyang Wang and Yicheng Wu
Crystals 2022, 12(2), 266; https://doi.org/10.3390/cryst12020266 - 15 Feb 2022
Cited by 1 | Viewed by 1953
Abstract
A new noncentrosymmetric cadmium indium borate, Cd4InO(BO3)3 (CIBO) has been successfully developed via a standard solid-state reaction. Its crystal structure was confirmed by the single crystal X-ray diffraction, which shows that CIBO belongs to the non-centrosymmetric and polar [...] Read more.
A new noncentrosymmetric cadmium indium borate, Cd4InO(BO3)3 (CIBO) has been successfully developed via a standard solid-state reaction. Its crystal structure was confirmed by the single crystal X-ray diffraction, which shows that CIBO belongs to the non-centrosymmetric and polar space group Cm. Its structure contains the distorted InO6 and CdOn (n = 6, 8) polyhedra, which link together by sharing an edge or corner to build a three dimensions framework with BO3 triangles accommodated in tunnels. Benefiting from the approximately parallel configuration of BO3 triangles, CIBO exhibited a strong second harmonic generation (SHG) effect (3 × KDP), and moderate birefringence of 0.077@1064 nm. Further optical and thermal characterizations suggest that CIBO possesses a wide transparent window and good thermal stability. Theoretical calculation reveals that the macroscopic SHG coefficients of CIBO results from the synergistic effect of the parallel arrangement of BO3 groups and d10 Cd2+ cation. Full article
(This article belongs to the Special Issue Recent Advances in Nonlinear Optical Crystals)
Show Figures

Figure 1

Back to TopTop