Special Issue "Advances in Ultra-Wide Bandgap Semiconductors and Their Applications"
Deadline for manuscript submissions: 31 December 2023 | Viewed by 160
Ultra-Wide Bandgap Semiconductors (UWBGS) refer to materials with bandgaps higher than gallium nitride (GaN), which is 3.4 eV. These materials include aluminum gallium nitride (AlGaN), gallium oxide (Ga2O3), diamond, and hexagonal and cubic boron nitride (h- and c-BN). Larger bandgaps open new areas of application due to higher figures-of-merit than their narrow band gap counterparts. Interest in UWBS has not diminished over time; as one material system reaches maturity, another emerges as its competitor; as AlGaN has developed considerably, Ga2O3 has started to show promise. Similarly, h-BN, a two-dimensional material (2D), can be applied to aid other material systems, and c-BN has the largest bandgap of any known semiconductor. Every member of the UWBGS family has issues to be resolved, leading to opportunities for innovators and researchers. The applications of UWBGS are even more exciting that include numerous types of field-effect transistors (FETs), deep ultraviolet light-emitting diodes (DUVLED), solar blind detectors, and high-power and radio frequency (RF) electronics, to name a few. Due to these reasons, the interest in UWBGS material research leads to new applications.
This Issue aims to consolidate research on Ultra-Wide Bandgap Semiconductor materials and their applications in one place where researchers can explore the published research work so that they can contribute further to this field.
Dr. Iftikhar Ahmad
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- aluminum nitride (AlN)
- aluminum Gallium nitride (AlGaN)
- gallium oxide (Ga2O3)
- aluminum gallium indium oxide [(AlGaIn)2O3]
- hexagonal boron nitride (h-BN)
- cubic aluminum boron nitride (c-AlBN)
- cubic boron nitride (c-BN)
- field effect transistor (FETs)
- heterojunction field effect transistor (HFTEs)
- metal insulator field effect transistor (MIFET)
- metal oxide field effect transistor (MOSFET)
- solar blind detectors
- deep ultraviolet light emitting diodes (DUVLEDs)
- two-dimensional electron gas (2DEG)
- modulation doping
- surface acoustic-wave devices
- quantum information
- extreme/harsh environment sensors