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Crystals
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Advances of GaN-Based Semiconductor Materials
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Advances of GaN-Based Semiconductor Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (25 June 2023) | Viewed by 2498

Special Issue Editors

Dr. Tao Wang

E-Mail Website
Guest Editor
Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Interests: III-nitride semiconductors; transmission electron microscopy
Special Issues, Collections and Topics in MDPI journals
Dr. Fang Liu

E-Mail Website
Guest Editor
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
Interests: III-nitride films; epitaxial growth; optoelectronic devices

Special Issue Information

Dear Colleagues,

GaN-based semiconductor materials have obtained tremendous attention due to their appealing applications in solid-state lighting and power devices. They are critical to the development of next-generation optoelectronic and electronic devices. Additionally, recent advances of nitride ferroelectrics (e.g., ScAlN and ScGaN) are promising to the new-generation microelectronic memory, acoustic devices, and quantum devices, which will accelerate the multifunctional and integrated develpment of ferroelectric functionality and microelectronics. To obtain high-quality GaN materials is of great significance for practical applications of devices. However, some of growth mechanisms of GaN are still unclear, especially, the mechanisms of GaN grown on foreign substrates (e.g., sapphire, two-dimensional materials, and metal, etc.).

We aim to investigate the epitaxial growth mechanisms of nitride semiconductors, which include novel epitaxial mechanisms and structural features, such as domain merging, defect evolution, lattice polarity, and so on. In addition, the relationship of microstructures and physical properties (e.g., electronic, phonon, and thermal properties), particularly in the scale of nanometers, is deserved to be comprehensively investigated. This Special Issue will also cover works relating to relative applications of GaN-based devices.

Dr. Tao Wang
Dr. Fang Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-nitride semiconductors
  • epitaxy
  • defect
  • device
  • nanoscale
  • lattice polarity
  • thermal management
  • polarizations
  • ferroelectrics 
  • TEM
  • EELS

Published Papers (2 papers)

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Research

17 pages, 6062 KiB  
Article
Energetics of Interfaces and Strain Partition in GaN/AlN Pseudomorphic Superlattices
by Theodoros Karakostas, Philomela Komninou and Vassilis Pontikis
Crystals 2023, 13(8), 1272; https://doi.org/10.3390/cryst13081272 - 17 Aug 2023
Viewed by 1344
Abstract
We present the results of a twofold experimental and computational study of (0001) GaN/AlN multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron Microscopy (HRTEM) shows that heterostructures with four c-lattice parameters thick GaN Quantum Wells (QW) are misfit-dislocation free. Accurate structural data are extracted [...] Read more.
We present the results of a twofold experimental and computational study of (0001) GaN/AlN multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron Microscopy (HRTEM) shows that heterostructures with four c-lattice parameters thick GaN Quantum Wells (QW) are misfit-dislocation free. Accurate structural data are extracted from HRTEM images via a new methodology optimizing the residual elastic energy stored in the samples. Total energy calculations are performed with several models analogous to the experimental QWs with increasing thicknesses of GaN, whereas this of the AlN barrier is kept fixed at n = 8 c-lattice parameters. With vanishing external stresses, minimum energy configurations of the studied systems correspond to different strain states. Linear elasticity accurately yields the corresponding lattice parameters, suppressing the need for on-purpose total energy calculations. Theoretically justified parabolic fits of the excess interfacial energy yield the values of interfacial stress and elastic stiffness as functions of the GaN QW thickness. Total species-projected densities of states and gap values extracted from there allow deciphering the effect of the evolving strain on the electronic structure of the superlattice. It is found that the gap energy decreases linearly with increasing the strain of the QW. These results are briefly discussed in the light shed by previous works from the literature. Full article
(This article belongs to the Special Issue Advances of GaN-Based Semiconductor Materials)
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8 pages, 5853 KiB  
Communication
Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces
by Quantong Li, Albert Minj, Yunzhi Ling, Changan Wang, Siliang He, Xiaoming Ge, Chenguang He, Chan Guo, Jiantai Wang, Yuan Bao, Zhuming Liu and Pierre Ruterana
Crystals 2023, 13(7), 1027; https://doi.org/10.3390/cryst13071027 - 28 Jun 2023
Cited by 1 | Viewed by 881
Abstract
We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface dislocations depend on the indium composition. For [...] Read more.
We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface dislocations depend on the indium composition. For lower indium composition (up to x = 0.09), we observed that the screw-type dislocations and dislocation half-loops occurred at the interface, even though the former do not contribute toward elastic relaxation of the misfit strain in the InGaN layer. With the increase in indium composition (0.13 ≤ x ≤ 0.17), in addition to the network of screw-type dislocations, edge-type misfit dislocations were generated, with their density gradually increasing. For higher indium composition (0.18 ≤ x ≤ 0.20), all of the interface dislocations are transformed into a network of straight misfit dislocations along the <10–10> direction, leading to partial relaxation of the InGaN epilayer. The presence of dislocation half-loops may be explained by a slip on basal plane; formation of edge-type misfit dislocations are attributed to punch-out mechanism. Full article
(This article belongs to the Special Issue Advances of GaN-Based Semiconductor Materials)
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