Special Issue "Group-III Nitride Quantum Wells"
Deadline for manuscript submissions: 30 June 2024 | Viewed by 2204
Interests: group-III nitride semiconductors; theory of semiconductor nanostructures; K-P method; ab-initio calculations; topological phase transition; topological insulators
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Group-III nitride quantum wells have become one of the most important semiconductor heterostructures since the discovery of GaN-based light-emitting diodes and laser diodes in the 1990s. Due to the large differences between the direct band gaps of InN, GaN, and AlN, they can emit light in a very wide spectral region from the far infrared to the deep ultraviolet. The technology of InGaN-based and AlGaN-based quantum wells operating in the blue and near-ultraviolet spectral regions is well established and these heterostructures are widely used in the active regions of commercial light emitters. For nitride quantum wells emitting light from the infrared to green spectral region and in the deep ultraviolet, the efficiency of emission is usually poor due to a number of physical and technological problems, such as large strains, strong built-in electric fields, localization of carriers due to alloy fluctuations, generation of a large number of point defects. Overcoming these problems will allow the development of new optoelectronic devices for numerous applications, including micro-displays, laser projectors, water purification systems, and food preservation tools.
This Special Issue focuses on the most recent advances in group-III nitride quantum wells. The potential topics of this Special Issue include the epitaxial growth of indium-rich or aluminum-rich quantum wells, carrier localization in disordered alloys, the strain-related effects, the built-in electric fields in polar and semi-polar wurtzite structures, defects and non-radiative recombination, optical and electrical properties of nitride quantum wells, zinc-blende nitride quantum wells, light-emitting diodes, and laser diodes.
Prof. Dr. Sławomir P. Łepkowski
Manuscript Submission Information
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- group-III nitride semiconductors
- quantum wells
- epitaxial growth
- strain-related effects
- spontaneous and piezoelectric polarizations
- alloy fluctuations
- optical and electrical properties
- radiative and nonradiative recombination
- light-emitting diodes
- laser diodes
- ab-initio calculations and modelling