Magnetoelectric Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 November 2023) | Viewed by 1953

Special Issue Editors


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Guest Editor
Luzhou Key Laboratory of Intelligent Control and Electronic Device Application Technology, School of Electrical and Electronics Engineering, Luzhou Vocational and Technical College, Luzhou 646000, China
Interests: magnetoelectric materials; magnetoelectric effects; magnetoelectric devices; multiferroic materials

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Guest Editor
School of Electrical and Electronic Engineering, Luzhou Vocational and Technical College, Luzhou 646000, China
Interests: novel multifunctional materials; magnetoelectric multiferroic; perovskites-structured materials; microwave dielectric ceramics; ferroelectric; spinel ferrites; oxide ceramics

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Guest Editor
Faculty of sciences Dhar El Mahraz, University Sidi Mohamed Ben Abdellah, Fez, Morocco
Interests: Perovskite Metal oxides; Thermal energy storage; Phase change material; Paraffin-aluminum composite; Lattice structure; Light weight structures; Composite processing; Ab initio calculations; Experiment; Physical and chemical proprties.

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Guest Editor
School of Physics, Southeast University, Jiangsu 211189, China
Interests: ferroelectricity; barium fluorides; antiferromagnetism

Special Issue Information

Dear Colleagues,

Multiferroic materials, which have two or more ferroic orders, such as ferroelectricity, ferromagnetism, and ferroelasticity, have gained increasing levels of interest in the world of novel multifunctional materials due to the interaction between spin and charge. Because of the highly desired strong coupling between ferroelectricity and ferromagnetism, magnetoelectric materials have received strong research interest. The magnetoelectric (ME) effect is the coupling between polarization (P) and magnetization (M). The influences of the magnetoelectric effect on multiferroics are expected to have a significant impact on the production of advanced electromagnetic devices in the future.

With the development of nanoscience, magnetoelectric materials based on metals, oxides, semiconductors, polymers, and their combinations have attracted more research attention because of their versatility and excellent properties, which can improve their performances in various applications. Developing novel magnetoelectric materials and exploring their applicability has become the focus of a wider range of research fields, including the development of materials, sensors, and actuators, and biomedical applications. Although the research community has made positive progress in these areas, it is still necessary to discuss the main problems that should be solved for practical applications, such as performance improvement, in-depth understanding of the physical and chemical properties of the materials, processability, equipment integration, and reliability. It seems worth noting that open questions, problems, and challenges continue to emerge, providing a source of future research ideas and applications. At present, much work has been devoted to the theoretical and experimental research of magnetoelectric materials and different devices based on them. In terms of the theory and application of the magnetoelectric effect, it is very meaningful to propose a collection of best works.

In this Special Issue, we invite front-line researchers and authors to submit original research and review articles that explore magnetoelectric materials at different length scales. This Special Issue will discuss the main directions of magnetoelectric materials development in order to generalize and provide recommendations for future research focusing on design, synthesis, characterization, theoretical description, recent developments in single-phase and composite form, and their applications in novel device architectures.

Dr. Sharma Poorva
Dr. Ashwini Kumar
Prof. Dr. Rachid Masrour
Prof. Dr. Qi Li
Guest Editors

Manuscript Submission Information

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Keywords

  • magnetoelectric materials
  • magnetoelectric effects
  • magnetoelectric devices
  • multiferroic materials
  • spintronic applications
  • magnetoelectric composites
  • magnetoelectric sensors
  • spin dynamics
  • magnetoelectric switching

Published Papers (2 papers)

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Research

10 pages, 6043 KiB  
Article
Surface Roughness Effects on Magnetic Properties and Switching Mechanism in Iron Nanowires
by Oleksandr Pastukh, Dominika Kuźma and Piotr Zieliński
Crystals 2023, 13(12), 1617; https://doi.org/10.3390/cryst13121617 - 22 Nov 2023
Viewed by 839
Abstract
Nanowires fabricated with experimental techniques are never perfect and possess structural imperfections. The effect of the resulting surface roughness on magnetic properties of iron nanowires has been simulated here with the use of numerical technique involving atomistic-resolved software Vampire. A two-regime or a [...] Read more.
Nanowires fabricated with experimental techniques are never perfect and possess structural imperfections. The effect of the resulting surface roughness on magnetic properties of iron nanowires has been simulated here with the use of numerical technique involving atomistic-resolved software Vampire. A two-regime or a power-law decrease in the coercive field has been found for the roughness amplitude up to 30% of the perfect radius of the wire. The roughness of the surface of the side face of cylindrical wire makes the ends of the cylinder inequivalent as far as the switching mechanism is concerned. As a result, the switching becomes dominated by a transverse domain wall arising at one specific end only. Both the coercive field and the switching mechanism are essential in designing magnetic devices, e.g., for memory storage. Full article
(This article belongs to the Special Issue Magnetoelectric Materials)
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15 pages, 5535 KiB  
Article
Electronic and Magnetic Properties of Cr and V Doped CaZ (Z = S, Se)
by Ranjan Kumar, Anita Rani and Abdullah A. Alshaikhi
Crystals 2023, 13(7), 1069; https://doi.org/10.3390/cryst13071069 - 07 Jul 2023
Cited by 1 | Viewed by 656
Abstract
Using first-principle spin-density functional computations, the structural, magnetic, and electronic properties of the Cr- and V-doped diluted magnetic semiconductors Ca1-xCrxS and Ca1-xVxSe at x = 0.25 in the B1 (NaCl) phase are explored. Elastic constants [...] Read more.
Using first-principle spin-density functional computations, the structural, magnetic, and electronic properties of the Cr- and V-doped diluted magnetic semiconductors Ca1-xCrxS and Ca1-xVxSe at x = 0.25 in the B1 (NaCl) phase are explored. Elastic constants and structural properties (lattice constants, bulk modulus, and its pressure derivative) were calculated and used to establish structure stability. Plots of the TDOS and PDOS of transition metal atom-doped CaZ at x = 0.25 and pure CaZ (Z = S, Se) are presented. Cr-doped CaZ (Z = S, Se) shows half-metallic character at x = 0.25 and is stable in ferromagnetic state, while that of V-doped CaZ compounds shows semiconductor behavior and is stable in antiferromagnetic state. Dispersion of phonons was also evaluated to check the global minima of energy in pure CaZ compounds. Curie temperature, magnetic moments, and exchange constants were also calculated for all doped systems. The current results are in excellent agreement with earlier research. Our current findings imply that CaZ doped with Cr/V (Z = S, Se) would make a promising option for spintronic applications. Full article
(This article belongs to the Special Issue Magnetoelectric Materials)
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