Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 607

Special Issue Editors

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Guest Editor
1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2. Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China
Interests: semiconductor optoelectronics; plasmon photonics; semiconductor micro/nano structure; solid-state electronics and power electronic devices; III-nitrides on Si substrates
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Guest Editor
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Interests: III-nitride device physics; LED; GaN-based micro-nano light-emitting structure; GaN-based micro-nano device; LED light source for regulating the biological rhythm
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Following the remarkable success of the first edition of the Special Issue titled “Recent Advances in III-Nitride Semiconductors” ( ), we are pleased to announce the second edition of this Special Issue, titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors”.

The group-III nitrides are typical wide-bandgap semiconductors. The interest in group-III nitrides lies in their irreplaceable and efficient blue-UV luminescence capability. Recently, more correlated wide-bandgap semiconductor materials, including Ga2O3, NiO, diamond, LiNbO3, and AlScN , have been at the forefront of research. Nitrides, along with those wide bandgap materials, have become key materials for the next generation of novel optoelectronic and electronic technologies. Recent progress in III-nitride semiconductors and the correlated wide bandgap semiconductor material quality and device design relies on well-mastered techniques of material growth and the formation of desired structures with their combinations. This process offers a high possibility of creating high-performance and diverse functional devices. III-nitride semiconductors and related wide-bandgap semiconductors are also promising candidates for next-generation power electronic applications because of their outstanding material properties, but their potential is far from being realized, and many material properties and device mechanisms still require investigation.

Therefore, we invite researchers to contribute to this Special Issue titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors”, which covers a broad spectrum of topics, extending from the study of wide-bandgap semiconductor materials, micro/nano structures, and novel functional devices to new applications in frontier fields.

The topics include, but are not limited to, the following subjects:

  • Growth of III-nitride semiconductors and correlated wide-bandgap semiconductor materials and micro/nanostructures;
  • Characterization of these materials and the heterostructures;
  • Novel devices, including emission, detection, and power devices;
  • Application and integration of these materials and novel devices in novel electronics and photonics.

Prof. Dr. Peng Chen
Prof. Dr. Zhizhong Chen
Guest Editors

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  • nitrides
  • GaN
  • Ga2O3
  • NiO
  • diamond
  • AlScN
  • heterostructures
  • epitaxy
  • electro-optics devices
  • micro-electronics devices
  • power devices
  • integrated circuits and modules
  • photonic crystal enhanced light-matter interaction
  • photonic crystal and plasmonics

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Published Papers (1 paper)

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11 pages, 46096 KiB  
Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
by Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller and Umesh K. Mishra
Crystals 2024, 14(6), 485; - 22 May 2024
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A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant [...] Read more.
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-polar unintentionally doped (UID) GaN, indicating its potential as a suitable replacement for selective dry etches in the fabrication of GaN high-electron-mobility transistors (HEMTs). The efficacy and selectivity of this etchant were confirmed through its application to a gate recess module of a deep-recess HEMT, where, despite a 228% over-etch, the 2.6 nm AlGaN etch stop layer remained intact. We also evaluated the proposed method for the selective etching of the GaN cap in the n+ regrowth process, achieving a contact resistance matching that of a BCl3/SF6 ICP process. These findings underscore the applicability and versatility of the etchant in both the electronic and photonic domains and are particularly applicable to the development of N-polar deep-recess HEMTs. Full article
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