Density Functional Theory: Theory, Methods, Applications, and Recent Advances

A special issue of Computation (ISSN 2079-3197). This special issue belongs to the section "Computational Chemistry".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 4822

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Department of Chemistry, Universidad Técnica Federico Santa Maria, Santiago 7660251, Chile
Interests: computational chemistry; density functional theory; porphyrins; graphenes; fullerenes; nanoparticles
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Special Issue Information

Dear Colleagues,

DFT has become one of the most popular and versatile methods available in condensed-matter physics, computational physics, and computational chemistry. DFT was not considered accurate enough for calculations in quantum chemistry field until the 1990s, when the approximations used in the theory were significantly refined, and thus, better modeling of the exchange and correlation interactions was achieved. DFT computational costs are relatively low when compared to traditional methods. It should be noted that despite recent improvements, DFT still encounters noticeable difficulties to properly describing various chemical phenomena, for instance, (i) intermolecular interactions (which is of critical importance to achieve complete understanding of chemical reactions), especially van der Waals forces (dispersion interactions); (ii) charge transfer excitations; (iii) transition states and global potential energy surfaces; (iv) dopant interactions and some strongly correlated systems; (v) various spin states in transition metal compounds, etc. The development of new DFT methods designed to overcome these problems via modifications to the functionals used or the inclusion of different additive terms has been the focus of many researchers, and noticeable successes have been achieved. However, there is still a lot to improve both in theory and practical applications of DFT, and thus, this area will continue to develop and flourish further to researchers’ advantage.

Therefore, various detailed aspects of theory, methods, practical applications, recent advances, and future perspectives of DFT are considered very important issues and will be addressed in the current Special Issue.

Dr. Aleksey E. Kuznetsov
Guest Editor

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Keywords

  • exchange–correlation functionals
  • pure functionals
  • dispersion correction
  • hybrid functionals
  • interaction energies
  • binding energies
  • transition state search
  • structure optimization
  • reactivity

Published Papers (2 papers)

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Research

18 pages, 5437 KiB  
Article
Application of DFT and TD-DFT on Langmuir Adsorption of Nitrogen and Sulfur Heterocycle Dopants on an Aluminum Surface Decorated with Magnesium and Silicon
by Fatemeh Mollaamin and Majid Monajjemi
Computation 2023, 11(6), 108; https://doi.org/10.3390/computation11060108 - 29 May 2023
Cited by 7 | Viewed by 1649
Abstract
In this study, we investigated the abilities of nitrogen and sulfur heterocyclic carbenes of benzotriazole, 2-mercaptobenzothiazole, 8-hydroxyquinoline, and 3-amino-1,2,4-triazole-5-thiol regarding adsorption on an Al-Mg-Si alloy toward corrosion inhibition of the surface. Al-Si(14), Al-Si(19), and Al-Si(21) in the Al-Mg-Si alloy surface with the highest [...] Read more.
In this study, we investigated the abilities of nitrogen and sulfur heterocyclic carbenes of benzotriazole, 2-mercaptobenzothiazole, 8-hydroxyquinoline, and 3-amino-1,2,4-triazole-5-thiol regarding adsorption on an Al-Mg-Si alloy toward corrosion inhibition of the surface. Al-Si(14), Al-Si(19), and Al-Si(21) in the Al-Mg-Si alloy surface with the highest fluctuation in the shielding tensors of the “NMR” spectrum generated by intra-atomic interaction directed us to the most influence in the neighbor atoms generated by interatomic reactions of N → Al, O → Al, and S → Al through the coating and adsorbing process of Langmuir adsorption. The values of various thermodynamic properties and dipole moments of benzotriazole, 2-mercaptobenzothiazole, 8-hydroxyquinoline, and 3-amino-1,2,4-triazole-5-thiol adsorbed on the Al-Mg-Si increased by enhancing the molecular weight of these compounds as well as the charge distribution between organic compounds (electron donor) and the alloy surface (electron acceptor). Finally, this research can build up our knowledge of the electronic structure, relative stability, and surface bonding of various metal alloy surfaces, metal-doped alloy nanosheets, and other dependent mechanisms such as heterogeneous catalysis, friction lubrication, and biological systems. Full article
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14 pages, 2202 KiB  
Article
First-Principles Investigation of Electronic and Related Properties of Cubic Magnesium Silicide (Mg2Si)
by Allé Dioum, Yacouba I. Diakité, Yuiry Malozovsky, Blaise Awola Ayirizia, Aboubaker Chedikh Beye and Diola Bagayoko
Computation 2023, 11(2), 40; https://doi.org/10.3390/computation11020040 - 17 Feb 2023
Cited by 2 | Viewed by 1244
Abstract
We present results from ab initio, self-consistent calculations of electronic, transport, and bulk properties of cubic magnesium silicide (Mg2Si). We employed a local density approximation (LDA) potential to perform the computation, following the Bagayoko, Zhao, and Williams (BZW) method, as improved [...] Read more.
We present results from ab initio, self-consistent calculations of electronic, transport, and bulk properties of cubic magnesium silicide (Mg2Si). We employed a local density approximation (LDA) potential to perform the computation, following the Bagayoko, Zhao, and Williams (BZW) method, as improved by Ekuma and Franklin (BZW-EF). The BZW-EF method guarantees the attainment of the ground state as well as the avoidance of over-complete basis sets. The ground state electronic energies, total and partial densities of states, effective masses, and the bulk modulus are investigated. As per the calculated band structures, cubic Mg2Si has an indirect band gap of 0.896 eV, from Γ to X, for the room temperature experimental lattice constant of 6.338 Å. This is in reasonable agreement with the experimental value of 0.8 eV, unlike previous ab initio DFT results of 0.5 eV or less. The predicted zero temperature band gap of 0.965 eV, from Γ to X, is obtained for the computationally determined equilibrium lattice constant of 6.218 Å. The calculated value of the bulk modulus of Mg2Si is 58.58 GPa, in excellent agreement with the experimental value of 57.03 ± 2 GPa. Full article
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