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Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application
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Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 36988

Special Issue Editors

Dr. Natalia B. Morozova

E-Mail Website
Guest Editor
Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
Interests: metal–organic chemistry; thermochemistry; gas transportation reactions; functional film and coating materials
Dr. Marina L. Kosinova

E-Mail Website
Guest Editor
Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
Interests: functional materials chemistry; LPCVD and PECVD processes; organoboron and organosilicon volatility compounds; functional films and coatings

Special Issue Information

Dear Colleagues,

Chemical vapor deposition (CVD) is a necessary and multipurpose tool for the development of innovative materials and structures that are the focus of modern nanotechnology. The actual progress of CVD is explained by the ability to fabricate both simple (metals and non-metal-containing) thin films and multicomponent new hybrid structures, intermetallic oxides layers, etc. for nanoelectronics, power electronics, medicine, space industries, ecology, and so on. In recent decades, different options of CVD have become the most widespread methods for making various types of materials: powders, fibers, thin and thick films, film heterostructures, single crystals, glasses, as well as their structural varieties (amorphous materials, polycrystalline materials with different microstructures). CVD variants (atomic layer deposition (ALD), pulsed MOCVD, and thermal MOCVD at low and atmospheric pressure, photo-enhanced MOCVD, etc.) have all the necessary capabilities to control the processes of growth of coatings with the specified composition and structure on objects of different geometry.

The productions and testing nanostructured film materials provide different applications of such multifunctional coatings in modern high-precision technologies.

The scope of this Special Issue will include papers in the following directions:

  • Fundamental aspects of CVD processes;
  • Recent developments in chemistry and design of CVD precursors;
  • Precursor thermochemistry and advanced surface chemistries for film deposition;
  • New directions in the evolution of the CVD technology;
  • Composite hybrid and multicomponent materials fabricated by different CVD processes;
  • New ideas in mechanisms and CVD growth processes: theoretical and experimental approaches;
  • Diagnostic and control of coating properties, structure, composition;
  • Application of thin films and coatings in modern industries.

Prof. Natalia B. Morozova
Assoc. Prof. Marina L. Kosinova
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Chemical vapor deposition
  • Elemento-organic and metal–organic precursors
  • Precursor thermochemistry
  • Mechanisms and CVD growth processes
  • Functional inorganic film and coating materials

Published Papers (11 papers)

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Research

Jump to: Review

22 pages, 5352 KiB  
Article
Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture
by Evgeniya Ermakova, Alexey Kolodin, Anastasiya Fedorenko, Irina Yushina, Vladimir Shayapov, Eugene Maksimovskiy and Marina Kosinova
Coatings 2023, 13(2), 310; https://doi.org/10.3390/coatings13020310 - 30 Jan 2023
Cited by 4 | Viewed by 2324
Abstract
PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote [...] Read more.
PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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22 pages, 13678 KiB  
Article
Application of Biocompatible Noble Metal Film Materials to Medical Implants: TiNi Surface Modification
by Evgeniia S. Vikulova, Ksenya I. Karakovskaya, Ilya V. Korolkov, Tatyana P. Koretskaya, Elena V. Chepeleva, Nikolay B. Kuz’min, Anastasiya D. Fedorenko, Denis P. Pischur, Tatiana Ya. Guselnikova, Eugene A. Maksimovskii, Ekaterina S. Marchenko, Aleksander A. Zheravin and Natalya B. Morozova
Coatings 2023, 13(2), 222; https://doi.org/10.3390/coatings13020222 - 18 Jan 2023
Cited by 4 | Viewed by 1718
Abstract
Recently, film materials based on the combination of noble metals have showed promising results for surface modification of medical implants, allowing both to improve biocompatibility and to acquire the increased antibacterial effect. An important challenge here is to combine the developed coating morphology, [...] Read more.
Recently, film materials based on the combination of noble metals have showed promising results for surface modification of medical implants, allowing both to improve biocompatibility and to acquire the increased antibacterial effect. An important challenge here is to combine the developed coating morphology, which is favorable for biological response, with a high protective function, which, on the contrary, requires a compact coating microstructure. In this work, we aimed to solve this problem with respect to the TiNi implant material. We have tested two types of compact thin sublayers: Iridium (Ir’), formed by metal-organic chemical vapor deposition (MOCVD), and gold (Au), formed by physical vapor deposition (PVD). Subsequently these sublayers were coated with a developed-columnar-iridium (Ir) by MOCVD. Features of the microstructure, chemical and phase composition of all these film materials were studied using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The changes in the characteristics of TiNi martensitic transformation due to MOCVD experiments were also studied by differential scanning calorimetry (DSC). The biocompatibility of Ir’/TiNi, Au/TiNi, Ir/Ir’/TiNi, Ir/Au/TiNi samples was assessed by cytoxicity testing (Man-1 cells) and measuring of nickel content in the biological extracts. The application of both sublayers effectively reduces the release of nickel, which was previously shown for Ir/TiNi samples. This prevents the toxic effect. Note that the Ir’ sublayer better protects against nickel release, while the Au sublayer promotes cell proliferation. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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17 pages, 3663 KiB  
Article
Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor
by Evgeniya Ermakova, Konstantin Mogilnikov, Igor Asanov, Anastasiya Fedorenko, Irina Yushina, Vadim Kichay, Eugene Maksimovskiy and Marina Kosinova
Coatings 2022, 12(11), 1767; https://doi.org/10.3390/coatings12111767 - 18 Nov 2022
Cited by 3 | Viewed by 2403
Abstract
A phenyl derivative of hexamethyldisilazane—bis(trimethylsilyl)phenylamine—was first examined as a single-source precursor for SiCN film preparation by plasma enhanced chemical vapor deposition. The use of mild plasma (20 W) conditions allowed the preparation of highly hydrogenated polymeric-like films. The synthesis was carried out under [...] Read more.
A phenyl derivative of hexamethyldisilazane—bis(trimethylsilyl)phenylamine—was first examined as a single-source precursor for SiCN film preparation by plasma enhanced chemical vapor deposition. The use of mild plasma (20 W) conditions allowed the preparation of highly hydrogenated polymeric-like films. The synthesis was carried out under an inert He atmosphere or under that of NH3 with the deposition temperature range from 100 to 400 °C. The chemical bonding structure and elemental composition were characterized by Fourier-transform infrared spectroscopy, energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy. The surface morphology was investigated by scanning electron microscopy. Ellipsometric porosimetry, a unique high-precision technique to investigate the porosity of thin films, was applied to examine the porosity of SiCN samples. The films were found to possess a morphologically homogenous dense defect-free structure with a porosity of 2–3 vol.%. SiCN films were studied in terms of their optical and dielectric properties. Depending on the deposition conditions the refractive index ranged from 1.53 to 1.78. The optical bandgap obtained using UV-Vis spectroscopy data varied from 2.7 eV for highly hydrogenated polymeric-like film to 4.7 eV for cross-linked nitrogen-rich film. The dielectric constant was found to decrease from 3.51 to 2.99 with the rise of hydrocarbon groups’ content. The results obtained in this study were compared to the literature data to understand the influence of precursor design to the optical and electrical properties of the films. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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26 pages, 5270 KiB  
Article
Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane
by Maksim N. Chagin, Veronica S. Sulyaeva, Vladimir R. Shayapov, Aleksey N. Kolodin, Maksim N. Khomyakov, Irina V. Yushina and Marina L. Kosinova
Coatings 2022, 12(1), 80; https://doi.org/10.3390/coatings12010080 - 11 Jan 2022
Cited by 5 | Viewed by 2237
Abstract
Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the [...] Read more.
Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiCxNy:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiCxNy:H films deposited using TMDSN + N2 mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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8 pages, 1257 KiB  
Article
Analytical Model of the Process of Thermal Barrier Coating by the MO CVD Method
by Vladimir V. Lukashov, Asiya E. Turgambaeva and Igor K. Igumenov
Coatings 2021, 11(11), 1390; https://doi.org/10.3390/coatings11111390 - 15 Nov 2021
Cited by 1 | Viewed by 1453
Abstract
Integral regularities in the growth of 7YSZ thermal barrier coatings during MO CVD (Metal–Organic Chemical Vapor Deposition) are proposed. Within the framework of the model of the reacting boundary layer, the coating deposition process is considered as a process of independent global reactions [...] Read more.
Integral regularities in the growth of 7YSZ thermal barrier coatings during MO CVD (Metal–Organic Chemical Vapor Deposition) are proposed. Within the framework of the model of the reacting boundary layer, the coating deposition process is considered as a process of independent global reactions of diffusion combustion of Zr(dpm)4 and Y(dpm)3 under convection conditions on a permeable surface. The rate of coating growth and the efficiency of using a precursor are analytically evaluated. The correctness of the proposed approach is confirmed by comparison with known experimental data. The considered model can be used to analyze the deposition of coatings from various mixtures of precursors, such as Nd(dpm)3, Hf(dpm)4, and Sm(dpm)3. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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9 pages, 2126 KiB  
Article
Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain
by Eunjung Ko, Juhee Lee, Seung-Wook Ryu, Hyunsu Shin, Seran Park and Dae-Hong Ko
Coatings 2021, 11(6), 654; https://doi.org/10.3390/coatings11060654 - 29 May 2021
Cited by 1 | Viewed by 6006
Abstract
Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, in SiGe, as the Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed [...] Read more.
Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, in SiGe, as the Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed to minimize defects; however, these techniques require relatively thick epitaxial layers and are not suitable for gate-all-around FETs. This study examined the effect of Ge concentration on the embedded SiGe source/drain region of a logic p-MOSFET. The strain was calculated through nano-beam diffraction and predictions through a simulation were compared to understand the effects of stress relaxation on the change in strain applied to the Si channel. When the device performance was evaluated, the drain saturation current was approximately 710 µA/µm at an off current of 100 nA/µm with a drain voltage of 1 V, indicating that the current was enhanced by 58% when the Ge concentration was optimized. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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16 pages, 28284 KiB  
Article
MOCVD of Noble Metal Film Materials for Medical Implants: Microstructure and Biocompatibility of Ir and Au/Ir Coatings on TiNi
by Evgeniia S. Vikulova, Ksenya I. Karakovskaya, Tatyana P. Koretskaya, Ilya V. Korolkov, Elena V. Chepeleva, Igor P. Asanov, Alphiya R. Tsygankova, Eugene A. Maksimovskii, Ekaterina S. Marchenko, Yuriy A. Lantsukhay, Aleksander A. Zheravin and Natalya B. Morozova
Coatings 2021, 11(6), 638; https://doi.org/10.3390/coatings11060638 - 27 May 2021
Cited by 6 | Viewed by 2995
Abstract
Noble metals such as Ir, Pt, Au are promising as coatings for metal medical implants to improve biocompatibility and corrosion resistance. Moreover, these coatings can be used as a basis for the further formation of bimetallic hetero-structures with enhanced antibacterial properties. In this [...] Read more.
Noble metals such as Ir, Pt, Au are promising as coatings for metal medical implants to improve biocompatibility and corrosion resistance. Moreover, these coatings can be used as a basis for the further formation of bimetallic hetero-structures with enhanced antibacterial properties. In this work, we develop an approach to obtain such coatings by metal-organic chemical vapor deposition (MOCVD). We have been focused on the formation of Ir coating with developed morphology and subsequent discrete Au coating onto the titanium nickelide (TiNi) implant material. Iridium was deposited in an oxidizing atmosphere from the volatile precursor [Ir(cod)(acac)] (cod = cyclooctadiene-1,5, acac = acetylacetonate-anion). The effects of the deposition temperature (290–350 °C) and amount of introduced oxygen on the composition (Ir, Ir + IrO2) and microstructure of the samples were studied. Hetero-metallic Au/Ir coatings were obtained using [(CH3)2Au(thd)] precursor (thd = dpm = dipivaloylmethanate-anion) at a deposition temperature of 240 °C in the presence of oxygen. To assess the biocompatibility, the toxicity of Ir/TiNi, Au/Ir/TiNi, and uncoated TiNi in relation to human embryonic stem cell line Man-1 was examined after 1, 3, and 5 days of incubation. The results obtained were explained based on the coating microstructures. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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15 pages, 6030 KiB  
Article
Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition
by Sami Kinnunen, Manu Lahtinen, Kai Arstila and Timo Sajavaara
Coatings 2021, 11(5), 542; https://doi.org/10.3390/coatings11050542 - 03 May 2021
Cited by 5 | Viewed by 6861
Abstract
Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation [...] Read more.
Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation at different deposition temperatures from 30 to 200 °C. The total hydrogen concentration in the films was found to increase as the deposition temperature decreased. When the deposition temperature decreased close to room temperature, the main source of impurity in hydrogen changed from 1H to 2H. A sufficiently long purging time changed the main hydrogen isotope incorporated in the film back to 1H. A multiple short pulse scheme was used to study the transient steric hindrance. In addition, the effect of the storage of the samples in ambient conditions was studied. During the storage, the deuterium concentration decreased while the hydrogen concentration increased an equal amount, indicating that there was an isotope exchange reaction with ambient H2 and/or H2O. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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16 pages, 4719 KiB  
Article
Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects
by Inga G. Vasilyeva, Evgeniia S. Vikulova, Alena A. Pochtar and Natalya B. Morozova
Coatings 2021, 11(2), 176; https://doi.org/10.3390/coatings11020176 - 02 Feb 2021
Cited by 5 | Viewed by 2378
Abstract
Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials and structures being [...] Read more.
Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials and structures being effective for secondary electron emission (SEE) and their diagnostics. Then, Metal-Organic Chemical Vapor Deposition (MOCVD) coupled with the specially selected precursor is suggested here as a new technique that transforms the refractory oxides to nanoscale, defect-disordered materials able to solid-solid interaction at 450 °C. Primary experiments have been performed for demanded mixed films based on MgO with ZrO2 and CeO2 additions. A dopant impact on facilitating the formation of oxygen vacancies in the host oxide and on the features of new mixed phases have been studied by new diagnostic means, based primarily on chemical method of differential dissolution. The method brought out the effective solvents that were the probes for identifying the nanoscale and amorphous phases possessing by the different defects on the surface of MgO films and determining contents of these phases. This approach allowed us to explain the origin of mixed phases and to estimate contribution of each from them in the macroscopic SEE properties. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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11 pages, 2624 KiB  
Article
Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
by Alexander Rogozhin, Andrey Miakonkikh, Elizaveta Smirnova, Andrey Lomov, Sergey Simakin and Konstantin Rudenko
Coatings 2021, 11(2), 117; https://doi.org/10.3390/coatings11020117 - 21 Jan 2021
Cited by 6 | Viewed by 2976
Abstract
Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence [...] Read more.
Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO2 at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO2/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited). Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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Review

Jump to: Research

36 pages, 10834 KiB  
Review
Volatile Iridium and Platinum MOCVD Precursors: Chemistry, Thermal Properties, Materials and Prospects for Their Application in Medicine
by Ksenya I. Karakovskaya, Svetlana I. Dorovskikh, Evgeniia S. Vikulova, Igor Yu. Ilyin, Kseniya V. Zherikova, Tamara V. Basova and Natalya B. Morozova
Coatings 2021, 11(1), 78; https://doi.org/10.3390/coatings11010078 - 11 Jan 2021
Cited by 26 | Viewed by 3950
Abstract
Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia and corrosion resistance, high biological compatibility, and mechanical strength, which are the basis for their application in medical practice. Metal-organic chemical vapor deposition (MOCVD) is [...] Read more.
Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia and corrosion resistance, high biological compatibility, and mechanical strength, which are the basis for their application in medical practice. Metal-organic chemical vapor deposition (MOCVD) is a promising method to fabricate Ir and Pt nanomaterials, multilayers, and heterostructures. Its advantages include precise control of the material composition and microstructure in deposition processes at relatively low temperatures onto non-planar substrates. The development of MOCVD processes is inextricably linked with the development of the chemistry of volatile precursors, viz., specially designed coordination and organometallic compounds. This review describes the synthesis methods of various iridium and platinum precursors, their thermal properties, and examples of the use of MOCVD, including formation of films for medical application and bimetallics. Although metal acetylacetonates are currently the most widely used precursors, the recently developed heteroligand Ir(I) and Pt(IV) complexes appear to be more promising in both synthetic and thermochemical aspects. Their main advantage is their ability to control thermal properties by modifying several types of ligands, making them tunable to deposit films onto different types of materials and to select a combination of compatible compounds for obtaining the bimetallic materials. Full article
(This article belongs to the Special Issue Coatings and Thin Film for Chemical Vapor Deposition (CVD) Application)
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