Advanced Methodology and Analysis in Electrical Materials Science

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 711

Special Issue Editors

Prof. Dr. Xiankun Zhang
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Guest Editor
Institute of Frontier Interdisciplinary Science and Technology, University of Science and Technology Beijing, Beijing 100083, China
Interests: new semiconductor electronics and optoelectronic devices based on low-dimensional materials
Prof. Dr. Zhiguo Ye
E-Mail Website
Guest Editor
School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063, China
Interests: electrical contact materials; nano-materials; metal matrix composite
Dr. Yuwei Fu
E-Mail Website
Guest Editor
School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China
Interests: electrical equipment fault diagnosis; electric contact materials; electrical insulating materials

Special Issue Information

Dear Colleagues,

As one of the important strategic emerging industries, advanced electrical materials are the basis of power equipment manufacturing and play an important basic support and pilot role in developing electrical equipment and technology. This Special Issue aims to solve difficult issues in electrical materials, help the field of power electrical materials discipline integration and upstream and downstream industry exchanges, and help the large-scale application of achievements in electrical materials. This Special Issue involves basic theoretical research, design and manufacturing, large-scale preparation, performance testing, service evaluation, engineering application, standardization, and information technology in advanced electrical materials, providing readers with the latest research findings and innovative developments.

Prof. Dr. Xiankun Zhang
Prof. Dr. Zhiguo Ye
Dr. Yuwei Fu
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • electrical materials
  • electrical insulating materials
  • electrical contact materials
  • electromagnetic conversion materials
  • shielding materials
  • energy storage materials

Published Papers (1 paper)

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10 pages, 3035 KiB  
Effect of Y2O3-Al2O3 Additives on the Microstructure and Electrical Properties Evolution of Si3N4 Ceramics
Appl. Sci. 2024, 14(3), 1125; - 29 Jan 2024
Viewed by 348
Si3N4 ceramic materials have great potential in the field of insulation in SF6 gas ultra-high-voltage transmission and transformation equipment due to their excellent insulation performance and thermal stability. In this paper, Y2O3-Al2O3 was [...] Read more.
Si3N4 ceramic materials have great potential in the field of insulation in SF6 gas ultra-high-voltage transmission and transformation equipment due to their excellent insulation performance and thermal stability. In this paper, Y2O3-Al2O3 was used as a sintering aid to prepare high-density (>99%) Si3N4 ceramics through two-step pressureless liquid-phase sintering, and the mechanism of the influence of Y2O3-Al2O3 addition on the microstructure and electrical properties of Si3N4 ceramics was studied. The results showed that increasing the sintering aid content could increase the grain size of Si3N4 ceramics, while increasing the Y2O3 ratio could refine the grain size. When Y2O3-Al2O3 addition was 8% and the ratio was 5:3, the room temperature volume resistivity of Si3N4 ceramics was the highest, 7.33 × 1014 Ω·m, and the volume resistivity was the most stable when the sintering aid content was 12%. The internal carrier migration type of Si3N4 ceramics was mainly ion conduction, mainly along the grain boundaries. The temperature stability of the resistivity of Si3N4 ceramics could be improved by doping with Y3+ functional ions to reduce the potential barrier conductivity level and refine the grain size to improve the conduction path. The dielectric constant and dielectric loss of Si3N4 ceramics were mainly affected by interface polarization. They gradually increased with the increase in sintering aid addition. Temperature had little effect on dielectric constant and dielectric loss in the range of 20–80 °C. Full article
(This article belongs to the Special Issue Advanced Methodology and Analysis in Electrical Materials Science)
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