Reprint
Frontiers of Semiconductor Lasers
Edited by
March 2023
230 pages
- ISBN978-3-0365-6940-6 (Hardback)
- ISBN978-3-0365-6941-3 (PDF)
This book is a reprint of the Special Issue Frontiers of Semiconductor Lasers that was published in
Chemistry & Materials Science
Engineering
Environmental & Earth Sciences
Summary
Semiconductor lasers are carriers of both energy for industry and information for optical communications. The recent progress in research on semiconductor lasers has offered new perspectives regarding both their material growth and structural design. Most of the papers are review papers that briefly overview different types of semiconductors. Some of the papers include the newest research results. We all hope that this Special Issue can shed light on recent advances in the field of semiconductor lasers and their applications so that most of the readers’ concerns about semiconductor lasers can be addressed and a conversation can be initiated.
Format
- Hardback
License
© 2022 by the authors; CC BY-NC-ND license
Keywords
silicon substrate; narrow linewidth; widely tunable; external cavity; high-power semiconductor laser; failure mechanisms; accelerated aging test; failure analysis techniques; narrow linewidth; external cavity; FSBDG; FBG; silicon-based waveguide; confocal F-P cavity; DFB laser array; multi-wavelength; series and parallel; optical communication; photonic integrated circuits; selective area epitaxy; MOCVD; semiconductor laser; quantum dot; heteroepitaxy; EML; multi-wavelength laser arrays; optical crystals; 1.3 μm laser; passively Q-switched laser; all-solid-state-laser; saturable absorber; perovskite lasers; perovskite semiconductors; solution process; vertical external cavity surface-emitting laser; laser resonator; wireless power charging; detection; ECQCL; QCL; tunable; diode laser array; external cavity feedback; volume Bragg grating; tuning central wavelength; narrow linewidth; diamond; thermal effect; high power; thermal-structural coupling model; semiconductor laser; temperature effects; carrier confinement; internal quantum efficiency; n/a