Reprint

Radiation Tolerant Electronics, Volume II

Edited by
January 2023
182 pages
  • ISBN978-3-0365-6445-6 (Hardback)
  • ISBN978-3-0365-6444-9 (PDF)

This book is a reprint of the Special Issue Radiation Tolerant Electronics, Volume II that was published in

Computer Science & Mathematics
Engineering
Physical Sciences
Summary

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.

Format
  • Hardback
License
© by the authors
Keywords
triple modular redundancy; 65 nm CMOS technology; single event effects; radiation hardening by design; digital integrated circuits; fault injection; simulation; VHDL; single event effects; open source tools; triple modular redundancy TMR; time redundancy (TR); TMR/Simplex; reliability improvement factor (RIF); half-duty limited DC-DC converter; total ionizing dose; system-level testing; point-of-load converter; radiation hardness assurance; system qualification; All-Digital; PLL; CDR; Single-Event Effects; radiation hardening; system-level tests; radiation hardness assurance; total ionizing dose; single event effects; D Flip-Flop; heavy ion; radiation hardened; Single Event Upset; D-type flip-flop; single event transient; single event upset; radiation hardened; quadrature; super-harmonic; LC-tank; Q-phase; VCO; QVCO; radiation; TID; SEE; X-ray; high energy physics; radiation hardened by design; 22-nm FD SOI; 28-nm FD SOI; Co-60; flip-flop (FF); heavy ion; radiation effects; ring oscillator (RO); static random-access memory (SRAM); total ionizing dose (TID); radiation effect; radiation test method; heavy ion; sensitive area; parasitic bipolar amplification; processor; laser test; generalized linear model; ensemble method; confidence interval; double-node upset (DNU); radiation-hardened latch; radiation hardening by design (RHBD); single event upset polarity; single-node upset (SNU); soft error; static random-access memory (SRAM); n/a