Next Issue
Volume 2, March
Previous Issue
Volume 1, September
 
 

Chips, Volume 1, Issue 3 (December 2022) – 7 articles

  • Issues are regarded as officially published after their release is announced to the table of contents alert mailing list.
  • You may sign up for e-mail alerts to receive table of contents of newly released issues.
  • PDF is the official format for papers published in both, html and pdf forms. To view the papers in pdf format, click on the "PDF Full-text" link, and use the free Adobe Reader to open them.
Order results
Result details
Select all
Export citation of selected articles as:
15 pages, 3368 KiB  
Article
A CMOS Voltage Reference with Output Voltage Doubling Using Modified 2T Topology
by Junyao Li and Pak Kwong Chan
Chips 2022, 1(3), 218-232; https://doi.org/10.3390/chips1030015 - 15 Dec 2022
Viewed by 2547
Abstract
This paper presents an ultra-low power CMOS voltage reference which operates in the subthreshold region. Modified from the conventional 2T circuit, the proposed circuit is capable of generating higher output voltage by using the resistor subdivision. The design comprises a negative-threshold native NMOS [...] Read more.
This paper presents an ultra-low power CMOS voltage reference which operates in the subthreshold region. Modified from the conventional 2T circuit, the proposed circuit is capable of generating higher output voltage by using the resistor subdivision. The design comprises a negative-threshold native NMOS transistor as the current generator, a high-threshold PMOS transistor as the active load and an active voltage doubling network to generate the reference voltage. Implemented in TSMC 40 nm CMOS technology, the proposed circuit operates at a minimum supply of 0.65 V and consumes 5.5 nA. Under one sample simulation, the obtained T.C. is 16.64 ppm/°C and the nominal Vref is 489.6 mV (75.3% of  Vddmin) for the temperature range from −20 °C to 80 °C. For Monte-Carlo simulation of 200 samples at room temperature, the average output voltage is 488 mV and the average T.C. is 29.6 ppm/°C whilst with the standard deviation of 13.26 ppm/°C. Finally, at room temperature, the proposed voltage reference has achieved a process sensitivity (σ/μ) of 3.9%, a line sensitivity of 0.51%/V and a power supply rejection of −45.5 dB and −76.3 dB at 100 kHz and 100 MHz. Compared to the representative prior-art works realized in the same technology and a similar supply current, the proposed circuit has offered the best 1-sampe T.C., the best average T.C. in multiple samples, the highest output voltage, the maximum output voltage per minimum supply voltage and the lowest process sensitivity in the output, Vref. Full article
Show Figures

Figure 1

8 pages, 796 KiB  
Communication
FPGA Prototyping of Web Service Using REST and SOAP Packages
by Chee Er Chang, Azhar Kassim Mustapha and Faisal Mohd-Yasin
Chips 2022, 1(3), 210-217; https://doi.org/10.3390/chips1030014 - 05 Dec 2022
Viewed by 1951
Abstract
This Communication reports on FPGA prototyping of an embedded web service that sends XML messages under two different packages, namely Simple Object Access Protocol (SOAP) and Representational State Transfer (REST). The request and response messages are communicated through a 100 Mbps local area [...] Read more.
This Communication reports on FPGA prototyping of an embedded web service that sends XML messages under two different packages, namely Simple Object Access Protocol (SOAP) and Representational State Transfer (REST). The request and response messages are communicated through a 100 Mbps local area network between a Spartan-3E FPGA board and washing machine simulator. The performances of REST-based and SOAP-based web services implemented on reconfigurable hardware are then compared. In general, the former performs better than the latter in terms of FPGA resource utilization (~12% less), message length (~57% shorter), and processing time (~4.5 μs faster). This work confirms the superiority of REST over SOAP for data transmission using reconfigurable computing, which paves the way for adoption of these low-cost systems for web services of consumer electronics such as home appliances. Full article
Show Figures

Figure 1

19 pages, 14639 KiB  
Article
Multi-Physics Fields Simulations and Optimization of Solder Joints in Advanced Electronic Packaging
by Boyan Yu and Yisai Gao
Chips 2022, 1(3), 191-209; https://doi.org/10.3390/chips1030013 - 17 Nov 2022
Cited by 1 | Viewed by 1803
Abstract
The endurability of solder joints in the ball-grid array (BGA) packaging is crucial to the functioning of the microelectronic system. To improve electronic packaging reliability, this paper is dedicated to numerically optimize solder joint array configuration and study the influence of multi-physical fields [...] Read more.
The endurability of solder joints in the ball-grid array (BGA) packaging is crucial to the functioning of the microelectronic system. To improve electronic packaging reliability, this paper is dedicated to numerically optimize solder joint array configuration and study the influence of multi-physical fields on solder joint reliability. The uniqueness of this study is that on the basis of temperature field and stress field, the electric field is added to realize the coupling simulation of three physical fields. In addition, the “Open Angle” is mathematically defined to describe the array configuration, and it was used to reveal the influence factors of solder joint fatigue, including stress, temperature, and current density. In the single solder joint model, the impacts of geometric shape and working conditions on the maximum value and distribution of these evaluation factors (stress, temperature, and current density) were investigated. Overall, the numerical investigation gives the optimal configuration, geometric shape, and working condition of solder joints, which benefits the design of endurable and efficient BGA packaging. Full article
Show Figures

Figure 1

16 pages, 2527 KiB  
Article
An Adaptive Downsampling FPGA-Based TDC Implementation for Time Measurement Improvement
by Evangelos Dikopoulos, Michael Birbas and Alexios Birbas
Chips 2022, 1(3), 175-190; https://doi.org/10.3390/chips1030012 - 08 Nov 2022
Cited by 2 | Viewed by 2284
Abstract
In this work, we present a compact “adaptive downsampling” method that mitigates the nonlinearity problems associated with FPGA-based TDCs that utilize delay lines. Additionally, this generic method allows for trade-offs between resolution, linearity, and resource utilization. Since nonlinearity is one of the predominant [...] Read more.
In this work, we present a compact “adaptive downsampling” method that mitigates the nonlinearity problems associated with FPGA-based TDCs that utilize delay lines. Additionally, this generic method allows for trade-offs between resolution, linearity, and resource utilization. Since nonlinearity is one of the predominant issues regarding delay lines in FPGA-based TDCs, combined with the fact that delay lines are utilized for a wide range of TDC architectures (not limited to the delay-line TDC), other implementations (e.g., Vernier or wave union TDCs), also in different FPGA devices, can directly benefit from the proposed adaptive method, with no need for either custom routing or complex tuning of the converter. Furthermore, implementation-related challenges regarding clock skew, measurement uncertainty, and the placement of the TDC are discussed and we also propose an experimental setup that utilizes only FPGA resources in order to characterize the converter. Although the TDC in this work was implemented in a Xilinx Virtex-6 device and was characterized under different operational modes, we successfully optimized the converter’s nonlinearity and resource utilization while retaining single-shot precision. The best performing (in terms of linearity) implementation reached DNLrms and INLrms values of 0.30 LSB and 0.45 LSB, respectively, and the single-shot precision (σ) was 9.0 ps. Full article
(This article belongs to the Special Issue Smart IC Design and Sensing Technologies)
Show Figures

Figure 1

3 pages, 210 KiB  
Editorial
Special Issue “Smart IC Design and Sensing Technologies”
by George Floros and Athanasios Tziouvaras
Chips 2022, 1(3), 172-174; https://doi.org/10.3390/chips1030011 - 20 Oct 2022
Viewed by 1349
Abstract
Smart sensing technologies and their inherent data-processing techniques have drawn considerable research and industrial attention in recent years. Recent developments in nanometer CMOS technologies have shown great potential to deal with the increasing demand of processing power that arises in these sensing technologies, [...] Read more.
Smart sensing technologies and their inherent data-processing techniques have drawn considerable research and industrial attention in recent years. Recent developments in nanometer CMOS technologies have shown great potential to deal with the increasing demand of processing power that arises in these sensing technologies, from IoT applications to complicated medical devices. Moreover, circuit implementation, which could be based on a full analog or digital approach or, in most cases, on a mixed-signal approach, possesses a fundamental role in exploiting the full capabilities of sensing technologies. In addition, all circuit design methodologies include the optimization of several performance metrics, such as low power, low cost, small area, and high throughput, which impose critical challenges in the field of sensor design. This Special Issue aims to highlight advances in the development, modeling, simulation, and implementation of integrated circuits for sensing technologies, from the component level to complete sensing systems. Full article
(This article belongs to the Special Issue Smart IC Design and Sensing Technologies)
22 pages, 1695 KiB  
Perspective
The Integrated Circuit Industry at a Crossroads: Threats and Opportunities
by Salvatore Pennisi
Chips 2022, 1(3), 150-171; https://doi.org/10.3390/chips1030010 - 06 Oct 2022
Cited by 3 | Viewed by 7728
Abstract
With the outbreak of the COVID-19 pandemic, the persistent chip shortage, war in Ukraine, and U.S.–China tensions, the semiconductor industry is at a critical stage. Only if it is capable of major changes, will it be able to sustain itself and continue to [...] Read more.
With the outbreak of the COVID-19 pandemic, the persistent chip shortage, war in Ukraine, and U.S.–China tensions, the semiconductor industry is at a critical stage. Only if it is capable of major changes, will it be able to sustain itself and continue to provide solutions for ongoing exponential technology growth. However, the war has undermined, perhaps definitively, a global order that urged the integration of markets above geopolitical divergences. Now that the trend seems to be reversed, the extent to which the costs of this commercial and technological decoupling can be absorbed and legitimized will have to be understood. Full article
Show Figures

Figure 1

29 pages, 2028 KiB  
Review
An Overview of State-of-the-Art D-Band Radar System Components
by Pascal Stadler, Hakan Papurcu, Tobias Welling, Simón Tejero Alfageme and Nils Pohl
Chips 2022, 1(3), 121-149; https://doi.org/10.3390/chips1030009 - 21 Sep 2022
Cited by 6 | Viewed by 4115
Abstract
In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have been reported mainly in the F-, D- and G-Band (80–200 GHz). This study is intended to give a [...] Read more.
In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have been reported mainly in the F-, D- and G-Band (80–200 GHz). This study is intended to give a state-of-the-art comparison on the performance of the different technologies—RFCMOS, SiGe/BiCMOS and III–V semiconductor composites—regarding the most crucial circuit parameters of Voltage-Controlled Oscillators (VCO), Power Amplifiers (PA), Phase Shifters (PS), Low-Noise Amplifiers (LNA) and Mixers. The most common topologies of each circuit element as well as the differences between the technolgies will futher be laid out while reasoning their benefits. Since not all devices were derived solely from single device publications, necessary steps to yield as fairly a comparison as possible were taken. Results include the area and power efficiency in RFCMOS, superior noise and power performance in III–V semiconductors and a continuous compromise between efficiency and performance in SiGe. The most rarely published devices, being Mixers and PSs, in the given frequency range have also been identified to give incentive for further developments. Full article
Show Figures

Figure 1

Previous Issue
Next Issue
Back to TopTop