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Article

One-Dimensional Maximum Power Point Tracking Design of Switched-Capacitor Charge Pumps for Thermoelectric Energy Harvesting

Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
*
Author to whom correspondence should be addressed.
Electronics 2023, 12(5), 1203; https://doi.org/10.3390/electronics12051203
Submission received: 15 February 2023 / Revised: 24 February 2023 / Accepted: 1 March 2023 / Published: 2 March 2023
(This article belongs to the Special Issue Energy Harvesting and Energy Storage Systems, Volume II)

Abstract

:
This paper proposes a one-dimensional (1D) maximum power point tracking (MPPT) design which only requires measurement of one parameter (the input voltage of a switched-capacitor charge pump) for calibrating a power converter including the charge pump and thermoelectric generator. The frequency of the clock to drive the charge pump is designed to minimize the circuit area of the entire charge pump circuit for generating a target output current at a specific output voltage. The ratio of the capacitance value of each boosting capacitor (C) to the size of the switching MOSFET can be determined to maximize the transferring current at the same time. When a thermoelectric generator (TEG) is given, its output impedance is determined. Its open-circuit voltage varies with the temperature difference between two plates of the TEG. MPPT maximizes the output power of the charge pump even when the temperature difference varies. It was indicated that the number of stages of charge pump (N) needs to increase when the temperature difference lowers, whereas C needs to decrease inversely proportional to N, meaning that the C–N product should be kept unchanged for MPPT. Demonstration of the circuit design was conducted in 65 nm CMOS, and the measured results validated the concept of the 1D MPPT.

1. Introduction

More and more Internet of things (IoT) devices are being connected to each other around the globe for a safer society and highly efficient healthcare, agriculture, and industries [1,2]. IoT devices to be placed somewhere with no alternating current (AC) main need to have batteries for powering. Rapid increases in the cost for replacing wasted batteries and in the amount of waste are becoming problematic. Energy-harvesting technology is expected to solve such an economic and environmental challenge by powering IoT devices with environmental energy sources such as lights, vibration, and heat flow [3,4]. Thermoelectric generators (TEGs) generate electric power with heat flow or a temperature gradient [5,6,7]. Powering sensors with heat flow from heat pipes to air to monitor surrounding temperature and other physical properties is used in chemical plants and fabs [8]. Wearable electronic devices can also work with TEG from body temperature without batteries [9].
Because the nominal open-circuit voltage of TEG (VOC) is below 1 V, boost converters are needed to drive sensor integrated circuits (ICs). Switched capacitor charge pumps (CPs) [10] are used, especially in applications which require a small form factor and low power. The design challenge is how high power conversion efficiency can be maintained, namely, maximum power point tracking (MPPT), over wide variations in temperature difference between the two plates of TEG (ΔT) or, in other words, over wide variations in VOC because VOC is proportional to ΔT. Figure 1 illustrates a general power supply system composed of TEG and CP for sensor ICs, as shown in [11,12]. The design parameters of CP are the stage capacitance C, the number of stages N, the size of charge transfer switches W, and the clock frequency f. Those parameters are determined by a given condition for the input voltage VS, output voltage VPP, and current IPP. When VS varies according to VOC, one or more design parameters need to be varied for the CP to operate at or around the maximum power point. In previous designs [13,14,15], multidimensional MPPT was proposed and evaluated. However, a greater circuit area was needed to have largely flexible input impedance of CP.
This paper is aimed at proposing and validating a one-dimensional MPPT to minimize the area overhead of CP even with MPPT capability by applying reconfigurability for CP. This paper is organized as follows: Section 2 reviews previous studies on CP with MPPT and reconfigurable CP in detail. The concept of a reconfigurable charge pump toward maximum output power density is proposed in Section 3. The circuit design is demonstrated in Section 4. Section 5 compares the proposed 1D MPPT design with the previous 2D or 3D ones.

2. Previous Work on TEG-CP System with MPPT and Reconfigurable CP

2.1. 2D (N, f) MPPT [13]

Figure 2 illustrates a 2D MPPT algorism [13]. The steps to determine the optimum N are as follows:
  • (Step 1) N is set to be the maximum assuming VOC is at the minimum (otherwise, the output voltage cannot reach the target output voltage VPP_TGT). f is set to be the minimum for having room to increase the input power to the CP with faster f during the following searching procedure.
  • (Step 2) CP runs in a predetermined period Tp. The peak output voltage is measured as VPP_past.
  • (Step 3) CP runs in Tp with a decreased N. The peak output voltage is measured as VPP_now.
  • (Step 4) VPP_now is compared with VPP_past. If VPP_now > VPP_past, then Step 3 is done. Otherwise, the procedure moves on to Step 5.
  • (Step 5) N is considered optimum at the current VOC, which makes the CP to output the maximum IPP.
Then, the steps to determine the optimum f are as follows:
6.
(Step 6) CP runs in Tp with an increased f. The peak output voltage is measured as VPP_now.
7.
(Step 7) VPP_now is compared with VPP_past. If VPP_now > VPP_past, then Step 6 is done. Otherwise, the procedure stops.
The value of N right after Step 5 can be optimum as long as VS stays at the value at Step 5. However, VS decreases as f increases because an increased input current decreases VS from an IR drop in the output impedance of TEG (RS). Therefore, the optimum N needs to depend on f. In order for the procedure to run the CP at the MPP regardless of VOC, a fully 2D MPPT would be needed to scan (N, f) points on the Nf plane. When the numbers of possible N and f are NN and Nf, respectively, one needs to run the CP with different combinations of NN × Nf in the worst case, which can take significant time to determine the MPP.

2.2. 2D (N, f) MPPT Algorism for CP System with a Supercapacitor and a Linear Regulator [14]

In [14], another 2D MPPT was proposed for the CP system with a supercapacitor and a linear regulator. MPPT is performed only during ramping up the output voltage of CP (VPP). While VPP is ramping up, the clock frequency f and the number of stages N are controlled independently. f is controlled in such a way that the input voltage of CP (VS) is around a target voltage (VMPPT) for MPPT. For example, when the energy transducer is TEG, VMPPT is VS/2. As f increases, the input impedance of CP decreases; therefore, VS decreases, or vice versa. N is controlled in such a way that VPP reaches a target voltage VPP_TGT. CP can generate VPP_TGT even with a low VS when N is sufficiently large. In other words, at the beginning of ramping up, N is controlled to be sufficiently large. As VPP is approaching VPP_TGT, N is decreased to the number of stages, which is barely sufficient under a given condition of VOC. Thus, MPPT is realized at the interface between TEG and CP rather than that between CP and the load.

2.3. 3D (C, N, f) MPPT Algorism [15]

In [15], a 3D MPPT was proposed with three design parameters f, C, and N controlled. In the first MPPT step, f is set at the maximum of 4.25 MHz. N is initially set to be the minimum value. Under a certain load condition, CP is run. Because the input impedance is minimum with the smallest N and the largest C, the input voltage of CP (VS) is expected to be lower than the target voltage of VOC/2 in case of TEG. VS is monitored to see if VS > VOC/2. Until VS > VOC/2, N is increased and C is decreased. Note that the input impedance can vary when a load varies over time; therefore, the CP configuration in terms of N and C may not depend only on VOC. Once N and C are determined as an MPPT configuration, f is controlled in such a way that VPP stays at a target voltage VPP_TGT under the given load condition. As a result, even with 3D MPPT, the final combination of C, N, and f may not achieve MPPT at the CP output.

2.4. Reconfigurable CP

Various charge transfer switches (CTSs) have been proposed to reduce the effective threshold voltage (VTH) per CTS. Umezawa et al. proposed effectively zero VTH CTS by using a four-phase clock [16], as shown in Figure 2a,b. C1 and C2 are the stage capacitors which mainly determine the circuit area. The other capacitors can be small, which aim at boosting the gate of CTSs. After the gate node is left floating, the small gate-boosting capacitors C3, C4 allow the transfer transistors to operate in triode region, resulting in effectively zero VTH. Gariboldi et al. proposed CTS with a CMOS latch or cross-coupled CMOS with two-phase clock [17], as shown in Figure 2c. A stage capacitor is halved for each of the two capacitors C1, C2 to remain the same stage capacitance in total. Charges can be fully transferred from C1 to C3 with CLK high and /CLK low in the first half period. Charges can be fully transferred from C2 to C4 with CLK low and /CLK high in the second half period. As a result, the same amount of charge can be transferred from one stage to the next in one clock cycle. Levacq et al. proposed an ultralow-power diode (ULPD) [18], as shown in Figure 2d. In a forward biasing condition, either the NMOSFET or the PMOSFET with a lower threshold voltage determines the forward bias current. In a reverse biasing condition, a significant reduction in off-leak current is expected.
To improve the power conversion efficiency of the RF-DC converter for RF energy harvesting over a wide input power range, a reconfigurable CTS was proposed in [19], as shown in Figure 3. Selectors can connect the gates of PMOSFETs with those of NMOS to be configured as a CMOS latch, as shown in Figure 3a, in a relatively low-input-power condition where the forward bias current is prioritized rather than low reverse leakage. CTS can be reconfigurable as a hybrid topology, as shown in Figure 3b, in a relatively high input power condition where low reverse leakage is prioritized rather than the forward bias current.
Figure 4a shows the schematic diagram of two-stage unit based on the structure of Figure 2a. Control signals ENP1, ENP2, and ENS determine the charge transfer path among IN-to-OUT_S, IN-to-OUT_P, IN_S-to-OUT_S, and IN_S-to-OUT_P. Figure 4b illustrates a symbol of the two-stage unit.
Using this structure, one can configure two two-stage units (see Figure 5a) connected in series as shown in Figure 5b or in parallel as shown in Figure 5c [20,21]. When two two-stage units are connected in series, CP has a single array of four stages. When two two-stage units are connected in parallel, CP has two stages with twofold larger stage capacitance. As a result, the former configuration has higher maximum attainable output voltage and higher output resistance than the latter. Thus, the rise time of the output voltage can be reduced when the latter configuration is set to increase the output current while the output voltage is low, and the former configuration is set to increase the output voltage while the output voltage is high [20]. Another use case of this reconfiguration is that the load is varied such that a high output current at a low output voltage is required in the first operation and a low output current at a high output voltage is required in the second operation [21].

3. Concept of 1D MPPT

In this paper, MPPT at the CP output is the focus. In [22], a circuit model for TEG-driven CP is developed to determine C and N to maximize the output current IPP at VPP with a predetermined f. The model equation is expressed below, while the circuit parameters are defined in Table 1. A flexible type of TEG [23] is proposed in this work, which has a relatively high RS.
I P P = N + 1 V O C V T H V P P δ V N + 1 2 R S + N f C + δ R .
An effective threshold voltage of charge transfer switches (CTS) VTH, a loss in the voltage gain due to the parasitic capacitance δ V , and an additional output resistance due to the parasitic capacitance δ R are given by Equations (2)–(4), respectively.
V T H = V T ln 4 1 N + 1 1 + α T f C V T I S A T .
δ V = V P P + N + 1 V T H N f C R S α T + α B + α T α B + α T α T V O C .
δ R = ( α T + α B N 2 ) R S .
Determination of the optimum combination of C and N for a given VOC was demonstrated in [22]. f is set at the predetermined value which maximizes IPP at VPP_TGT [24]. In other words, the predetermined value of f can minimize the CP area to output a target IPP at VPP_TGT. To determine f, IPP at VPP_TGT of 3.0 V was measured as a function of f with SPICE. Four CP configurations, as discussed below in detail, were tested in the case of (N, C) of (2, 160 pF), (4, 80 pF), (8, 40 pF), and (16, 20 pF), namely, 8-2, 4-4, 2-8, and 1-16 modes at VOC of 2.0 V, 1.5 V, 1.0 V, and 0.5 V, respectively, as shown in Figure 6a. Figure 6b shows IPP normalized by the maximum value in each configuration. Regardless of configuration, f of 8–10 MHz gave the maximum output current. Thus, f of 10 MHz was selected in this work.
Unlike a given VOC in [22], how the optimum combinations of C and N vary with VOC was the concern in this paper. Figure 7 shows the contour plots of the output power POUT over the C–N plane in the case of VOC = 0.5 V (a), 0.7 V (b), 1.0 V (c), 1.5 V (d), and 2.0 V (e) [25]. Points in red indicates the optimum combinations of C and N, namely, COPT and NOPT, respectively, which enable CP to generate the largest POUT.
Figure 8 shows how COPT and NOPT vary with VOC. The slope of the approximate line is −1, which suggests that their product, i.e., the CP area, should be constant. Intuitively, as VOC decreases, N needs to increase to remain the voltage gain from the input to the output. If C is unchanged, the input current should increase with larger N. This means that the input impedance would decrease. To keep the impedance matching at the interface between TEG and CP, C needs to decrease as N increases. Conversely, as VOC increases, N must decrease whereas C must increase to keep the voltage gain and the input impedance at the same time. To operate CP in MPPT at the CP output, one needs to design CP so that N can vary while C can vary inversely proportional to N when VOC varies. As a result, the following functionalities are needed: (1) periodical detection of VOC, (2) determination of C–N combination for the present value of VOC, and (3) reconfiguration of CP to have COPT and NOPT for the present value of VOC. In Section 4, the design is demonstrated. This procedure can be called a one-dimensional MPPT because one only needs to determine the combination of COPT and NOPT for the present value of VOC.

4. Circuit Design

4.1. Reconfigurable CP

In [15], a reconfigurable CP with fine-tuning capability to allow N of 1, 2, 3, 4, or 5 was proposed. As a result, 12 capacitors and 88 switches are needed for the five-stage CP. Many switches increase parasitic capacitance to the stage capacitors, which can affect voltage gain and power efficiency. Instead, another reconfiguration approach [21,22] was used to minimize the area overhead in this paper. Sixteen switches are added to the original 16-stage CP to allow CP to have two, four, eight, and 16 stages depending on the measured value of VOC, as shown in Figure 8. Figure 9 shows a reconfigurable CP with eight two-stage units. With the signals in red are high and those in black are low, it can be reconfigured as a single-array 16-stage mode (1-16 mode), two-array eight-stage mode (2-8 mode), four array four-stage mode (4-4 mode), or eight-array two-stage mode (8-2 mode), as shown in Figure 9b–e. The lines in red show the conduction paths.
Figure 10a–e show POUT, VS, PS, ηCP, and ηCP_MPPT as a function of VOC, respectively, in different modes. The aim of this work was to achieve MPPT at the CP output. According to Figure 10a, the boundaries in VOC between 1-16 and 2-8 modes, between 2-8 and 4-4 modes, and between 4-4 and 8-2 modes are 0.55 V, 1.05 V, and 1.80 V, respectively. When the CP operates with 1-16, 2-8, 4-4, and 8-2 modes in VOC < 0.55 V, 0.55 V < VOC < 1.05 V, 1.05 V < VOC < 1.80 V, and 1.80 V < VOC, respectively, one can maximize POUT regardless of VOC. Figure 10b shows VS under the CP operation in MPPT. As suggested in [22], VS in cases where CP operates in MPPT for the output (VMPPT_OUT) is basically larger than that in cases where CP operates in MPPT for the input (VMPPT_IN), even though there are tiny ranges in VOC where VMPPT_OUT < VMPPT_IN. Figure 10c indicates that the input power to the CP converses as VOC increases. As a result, power efficiency ηCP or ηCP_MPPT is maximized, as shown in Figure 10d or Figure 10e, where ηCP and ηCP_MPPT are defined by Equations (5) and (6), respectively [15].
η C P = P O U T P S .
η C P _ M P P T = P O U T P A V .
PAV is the maximum attainable power of TEG when the impedance at the interface between TEG and CP is matched, as defined by Equation (7).
P A V = V O C 2 4 R S .
Figure 11a–d show POUT, ηCP, ηTEG, and ηCP_MPPT as a function of VOC, respectively, in MPPT and fixed 1-16 modes. ηTEG is defined by Equation (8) showing how much power is actually input to the CP normalized by PAV.
η T E G = P S P A V .
The monotonic increase in ηCP_MPPT with MPPT indicates that this simple circuit structure with binary steps in N can be sufficient with respect to system power efficiency. As a result, the average CP output power increases by a factor of 2.3 with the proposed MPPT when VOC varies in a rage of 0.5 V and 2.0 V randomly.

4.2. System Design

Figure 12a,b show the CP system and VPP waveform in ramping up, calibration, and user modes, respectively [26]. VOC can be measured when VPP stays high. Because the A/D converter (ADC) and bandgap reference (BGR) are powered by VPP, one cannot know a value of VOC until VPP goes high. As a result, CP is set to the 1-16 mode initially, which can be boosted up to a target VPP of 3 V even with low VOC. In the above demonstration, N0 and C0 are 16 and 20 pF, respectively. Once VPP reaches a target of 3 V, a calibration mode starts. The oscillator to drive CP is disabled to increase the input impedance of CP sufficiently high. After the input voltage VS is saturated to be close to VOC, ADC measures the VOC value for C/N selector to determine the logic values for the CP control signals such as ES1 and EP1. CP is reconfigured to the optimum one for the current value of VOC. Even without no CP operation in calibration mode, a voltage droop in VPP can be sufficiently small with low power ADC and BGR and large COUT. In the following user mode, CP operates in the current configuration. For a given application, the temperature gradient of TEG drifts in a specific time. The next calibration should start earlier than that specific time, but it is often not necessary.
To validate the design, VOC shown in Figure 13a was input. VOC was varied from 0.5 V to 0.7 V and to 1.2 V. To save the simulation time, a step response in VOC was used. VPP was regulated at 3 V in 1-16 mode. After CP entered in steady state, a calibration signal was input with high in 100 ns. CP was reconfigured to 2-8 mode. Figure 13c shows 16 capacitor voltages in TM1. Only eight signals are visible because the same stage voltages of two arrays of the eight-stage CP were overlaid. Similarly, Figure 13d shows 16 capacitor voltages in 4-4 modes. Only four signals are visible because the same stage voltages of four arrays of the four-stage CP were overlaid. The ripple in VPP increased from TST to TM2 with IPP, which means that output power increased with VOC.
In the CP system shown in Figure 8, another feedback loop to disable CP when the input voltage VS lowers below a critical point where the output current becomes zero, as proposed in [11,12], was omitted for simplicity. Such a feedback loop is needed in a practical design.

5. Experiment

A part of the CP system was implemented in 65 nm CMOS to validate the design, as shown in Figure 14. Eight two-stage units were placed in order horizontally. CTS and small gate boosting capacitors were placed in the center. Clock and control signals were routed over the CTS region. Thus, additional circuit elements for CP to run with MPPT were minimal. The on-chip oscillator generated four clocks at 10 MHz. In this design, two-bit signals were input to select one among four configuration modes externally, instead of using ADC.
Figure 15 shows the measured VOUTIOUT at VS of 0.6V. CIN and COUT of 1 nF were connected to the circuit. The slope in each mode was proportional to fC/N. The expected ratios between 1-16 and 2-8 modes, between 2-8 and 4-4 modes, and between 4-4 and 8-2 modes were as large as a theoretical value of 4 (a factor of 2 from C and another factor of 2 from N). According to the measured maximum attainable output voltage, the effective threshold voltage was estimated to be 50 mV. Thus, VOUTIOUT curves in different modes were verified. Unfortunately, further measurement was not possible because all three fabricated dies were broken by accident.

6. Comparison with Previous Work

Table 2 compares this study with previous work [13,14,15]. In these previous studies, f was used as a control circuit parameter to adjust the CP operation to MPPT. When one has room to decrease f, such a design needs larger C than that of the CP, which is designed with an optimum f for the minimum circuit area. As a result, the CP needs to prepare more area than the minimum. In this work, f was fixed at 10 MHz regardless of VOC. Therefore, the ratio of the size of CTS to C, whose optimum value was a function of f [18], was designed to be a single value. Thus, the two-stage unit can be commonly used for any configuration mode. Additional switches to change the connection state from serial to parallel or vice versa can be simple and implemented in the CTS region with a small area overhead. As a result, the output power density could be reduced in this study.

7. Summary

One-dimensional maximum power tracking was proposed to achieve both increased extracted power to the load and squeezed circuit area at the same time. A key finding in this paper is that MPPT at the output of CP was realized with the C–N product, i.e., CP area, constant even at different open-circuit voltages of TEG. In calibration mode, VOC was measured with ADC while CP was disabled to determine an optimum CP configuration at the current VOC. In the following user mode, CP was run with the updated reconfigured mode. By repeating this procedure periodically, CP can always stay under the MPPT condition. In the future, it will be verified whether the proposed MPPT method is applicable to other DC energy transducers such as photovoltaic and microbial fuel cells.

Author Contributions

Conceptualization, T.T.; methodology, K.N. and T.T.; software, K.N.; validation, K.N. and T.T.; formal analysis, K.N. and T.T.; investigation, K.N. and T.T.; writing—original draft preparation, K.N.; writing—review and editing, T.T.; funding acquisition, T.T. All authors have read and agreed to the published version of the manuscript.

Funding

This research was partially funded by Zeon Corp.

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

Not applicable.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. Zanella, A.; Bui, N.; Castellani, A.; Vangelista, L.; Zorzi, M. Internet of Things for Smart Cities. IEEE Internet Things J. 2014, 1, 22–32. [Google Scholar] [CrossRef]
  2. Al-Fuqaha, A.; Guizani, M.; Mohammadi, M.; Aledhari, M.; Ayyash, M. Internet of Things: A Survey on Enabling Technologies, Protocols, and Applications. IEEE Commun. Surv. Tutorials 2015, 17, 2347–2376. [Google Scholar] [CrossRef]
  3. Mitcheson, P.D.; Yeatman, E.M.; Rao, G.K.; Holmes, A.S.; Green, T.C. Energy Harvesting from Human and Machine Motion for Wireless Electronic Devices. Proc. IEEE 2008, 96, 1457–1486. [Google Scholar] [CrossRef] [Green Version]
  4. Sudevalayam, S.; Kulkarni, P. Energy Harvesting Sensor Nodes: Survey and Implications. IEEE Commun. Surv. Tutorials 2010, 13, 443–461. [Google Scholar] [CrossRef] [Green Version]
  5. Huesgen, T.; Woias, P.; Kockmann, N. Design and fabrication of MEMS thermoelectric generators with high temperature efficiency. Sens. Actuators A Phys. 2008, 145, 423–429. [Google Scholar] [CrossRef]
  6. Date Sheet of TGP-651, Micropelt. Available online: http://www.micropelt.com/ (accessed on 15 February 2023).
  7. Du, Y.; Xu, J.; Paul, B.; Eklund, P. Flexible thermoelectric materials and devices. Appl. Mater. Today 2018, 12, 366–388. [Google Scholar] [CrossRef]
  8. Garofalo, E.; Bevione, M.; Cecchini, L.; Mattiussi, F.; Chiolerio, A. Waste heat to power: Technologies, current applications, and future potential. Energy Technol. 2020, 8, 2000413. [Google Scholar] [CrossRef]
  9. Nozariasbmarz, A.; Collins, H.; Dsouza, K.; Polash, M.H.; Hosseini, M.; Hyland, M.; Liu, J.; Malhotra, A.; Ortiz, F.M.; Mohaddes, F.; et al. Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems. Appl. Energy 2020, 258, 114069. [Google Scholar] [CrossRef]
  10. Dickson, J.F. On-Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Multiplier Technique. IEEE J. Solid-State Circuits 1976, 11, 374–378. [Google Scholar] [CrossRef]
  11. Koketsu, K.; Tanzawa, T. A Design of Cold Start Charge Pump for Flexible Thermoelectric Generator with High Output Impedance. In Proceedings of the 2020 27th IEEE International Conference on Electronics, Circuits and Systems, Glasgow, UK, 23–25 November 2020. [Google Scholar] [CrossRef]
  12. Koketsu, K.; Tanzawa, T. Design of a charge pump circuit and system with input impedance modulation for a flexible-type thermoelectric generator with high-output impedance. Electronics 2021, 10, 1212. [Google Scholar] [CrossRef]
  13. Xiaosen, L.; Sanchez-Sinencio, E. A 0.45-to-3V reconfigurable charge-pump energy harvester with two-dimensional MPPT for Internet of Things. In Proceedings of the 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of Technical Papers, San Francisco, CA, USA, 22–26 February 2015; pp. 1–3. [Google Scholar]
  14. Carreon-Bautista, S.; Huang, L.; Sanchez-Sinencio, E. An autonomous energy harvesting power management unit with digital regulation for IoT applications. IEEE J. Solid-State Circuits 2016, 51, 1457–1474. [Google Scholar] [CrossRef]
  15. Yoon, S.; Carreon-Bautista, S.; Sánchez-Sinencio, E. An Area Efficient Thermal Energy Harvester with Reconfigurable Capacitor Charge Pump for IoT Applications. IEEE Trans. Circuits Syst.—II Express Briefs 2018, 65, 1974–1978. [Google Scholar] [CrossRef] [Green Version]
  16. Umezawa, A.; Atsumi, S.; Kuriyama, M.; Banba, H.; Imamiya, K.; Naruke, K.; Yamada, S.; Obi, E.; Oshikiri, M.; Suzuki, T.; et al. A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure. IEEE J. Solid-State Circuits 1992, 27, 1540–1546. [Google Scholar] [CrossRef]
  17. Gariboldi, R.; Pulvirenti, F. A 70 mΩ Intelligent High Side Switch with Full Diagnostics. IEEE J. Solid-State Circuits 1996, 31, 915–923. [Google Scholar] [CrossRef]
  18. Levacq, D.; Liber, C.; Dessard, V.; Flandre, D. Composite ULP diode fabrication, modelling and applications in multi-Vth FD SOI CMOS technology. Solid-State Electron. 2004, 48, 1017–1025. [Google Scholar] [CrossRef]
  19. Lian, W.X.; Yong, J.K.; Chong, G.; Churchill, K.K.P.; Ramiah, H.; Chen, Y.; Mak, P.-I.; Martins, R.P. A Reconfigurable Hybrid RF Front-End Rectifier for Dynamic PCE Enhancement of Ambient RF Energy Harvesting Systems. Electronics 2023, 12, 175. [Google Scholar] [CrossRef]
  20. Tanzawa, T.; Tanaka, Y.; Tanaka, T.; Nakamura, H.; Oodaira, H.; Sakui, K.; Momodomi, M.; Shiratake, S.; Nakano, H.; Oowaki, Y.; et al. A quick boosting charge pump circuit for high density and low voltage flash memories. In Proceedings of the 1994 IEEE Symposium on VLSI Circuits, San Diego, CA, USA, 9–11 June 1994; pp. 65–66. [Google Scholar]
  21. Tanzawa, T.; Tanaka, T.; Takeuchi, K.; Nakamura, H. Circuit Techniques for a 1.8-V-Only NAND Flash Memory. IEEE J. Solid-State Circuits 2002, 37, 84–89. [Google Scholar] [CrossRef]
  22. Tanzawa, T. Design of DC-DC Switched-Capacitor Voltage Multiplier driven by DC Energy Transducer. In Proceedings of the IEEE International Conference on Electronics, Circuits and Systems, Marseille, France, 7–10 December 2014; pp. 327–330. [Google Scholar]
  23. Suemori, K.; Hoshino, S.; Kamata, T. Flexible and lightweight thermoelectric generators composed of carbon nanotube–polystyrene composites printed on film substrate. Appl. Phys. Lett. 2013, 103, 153902. [Google Scholar] [CrossRef]
  24. Tanzawa, T. A Switch-Resistance-Aware Dickson Charge Pump Model for Optimizing Clock Frequency. IEEE Trans. Circuits Syst. II Express Briefs 2011, 58, 336–340. [Google Scholar] [CrossRef]
  25. Nono, K.; Tanzawa, T. A Design of Adaptive Charge Pumps with Minimum Circuit Area for Thermoelectric Energy Harvesting under Temperature Variations. IEICE General Conference, C-12-27, March 2021. Available online: http://hdl.handle.net/10297/00027950 (accessed on 15 February 2023).
  26. Nono, K.; Tanzawa, T. A Design of Charge Pump System with Maximum Power Point Tracking for Low Cost Thermoelectric Energy Harvesting, IEICE Society Conference, C-12-3, September 2021. Available online: http://hdl.handle.net/10297/00028355 (accessed on 15 February 2023).
Figure 1. Circuit diagram of CP with TEG as a power source and sensor IC as a load.
Figure 1. Circuit diagram of CP with TEG as a power source and sensor IC as a load.
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Figure 2. Charge transfer switches (CTSs) with local gate boosters (a), four-phase clock (b), CMOS latch or cross-coupled CSTs (c), and ULPD (d).
Figure 2. Charge transfer switches (CTSs) with local gate boosters (a), four-phase clock (b), CMOS latch or cross-coupled CSTs (c), and ULPD (d).
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Figure 3. Reconfigurable CP with variable topology of CTSs; CMOS latch CTS in a low input power range (a) and a hybrid CTS n a high input power range (b).
Figure 3. Reconfigurable CP with variable topology of CTSs; CMOS latch CTS in a low input power range (a) and a hybrid CTS n a high input power range (b).
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Figure 4. (a) Two-stage unit; (b) symbols of the two-stage unit.
Figure 4. (a) Two-stage unit; (b) symbols of the two-stage unit.
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Figure 5. (a) Reconfigurable CP with two two-stage units; (b) operation of the CP with two two-stage units connected in series; (c) operation of the CP with two two-stage units connected in parallel.
Figure 5. (a) Reconfigurable CP with two two-stage units; (b) operation of the CP with two two-stage units connected in series; (c) operation of the CP with two two-stage units connected in parallel.
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Figure 6. Clock frequency vs. output current at VPP of 3.0V. (a) absolute value; (b) arbitrary unit.
Figure 6. Clock frequency vs. output current at VPP of 3.0V. (a) absolute value; (b) arbitrary unit.
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Figure 7. Contour plots of POUT in case of VOC of 0.5 V (a), 0.7 V (b), 1.0 V (c), 1.5 V (d), and 2.0 V (e). “x” in each figure indicates the maximum power point.
Figure 7. Contour plots of POUT in case of VOC of 0.5 V (a), 0.7 V (b), 1.0 V (c), 1.5 V (d), and 2.0 V (e). “x” in each figure indicates the maximum power point.
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Figure 8. Relationship between COPT and NOPT for TEG with RS = 600 Ω and VOC = 0.5–2.0 V.
Figure 8. Relationship between COPT and NOPT for TEG with RS = 600 Ω and VOC = 0.5–2.0 V.
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Figure 9. (a) Reconfigurable CP, (b) single-array 16-stage mode, (c) two-array eight-stage mode, (d) four array four-stage mode, (e) eight-array two-stage mode.
Figure 9. (a) Reconfigurable CP, (b) single-array 16-stage mode, (c) two-array eight-stage mode, (d) four array four-stage mode, (e) eight-array two-stage mode.
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Figure 10. POUT (a), VS (b), PS (c), ηCP (d), and ηCP_MPPT (e) as a function of VOC in different modes.
Figure 10. POUT (a), VS (b), PS (c), ηCP (d), and ηCP_MPPT (e) as a function of VOC in different modes.
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Figure 11. POUT (a), ηCP (b), ηTEG (c), and ηCP_MPPT (d) as a function of VOC in MPPT and a fixed 1-16 modes.
Figure 11. POUT (a), ηCP (b), ηTEG (c), and ηCP_MPPT (d) as a function of VOC in MPPT and a fixed 1-16 modes.
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Figure 12. CP system (a), VPP waveform in ramping-up, calibration, and user modes (b).
Figure 12. CP system (a), VPP waveform in ramping-up, calibration, and user modes (b).
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Figure 13. Input voltage VOC (a), VPP, VOC, and calibration signal (b), 16 capacitor voltages in TM1 (c), and 16 capacitor voltages in TM2 (d).
Figure 13. Input voltage VOC (a), VPP, VOC, and calibration signal (b), 16 capacitor voltages in TM1 (c), and 16 capacitor voltages in TM2 (d).
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Figure 14. Die photo.
Figure 14. Die photo.
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Figure 15. Measured VOUTIOUT at VS of 0.6 V in four CP modes.
Figure 15. Measured VOUTIOUT at VS of 0.6 V in four CP modes.
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Table 1. Definition of circuit parameters.
Table 1. Definition of circuit parameters.
ParameterDefinitionDefault Value
TEGVOCOpen-circuit voltage as a function of temperature gradient0.5, 0.7, 1.0, 1.5, 2.0 V
RSOutput resistance600 Ω
CPCStage capacitanceTBD
NNumber of stage capacitorsTBD
fClock frequency10 MHz
VPPTarget output voltage 3.0 V
VTEffective thermal voltage of charge transfer switches (CTS)26 mV
ISATSaturation current of CTS40 nA
αTRatio of top plate capacitance to C0.05
αBRatio of bottom plate capacitance to C0.1
Table 2. Comparison with previous work.
Table 2. Comparison with previous work.
Liu, 2015 [13]Bautista, 2016 [14]Yoon, 2018 [15]This Work
Technology [nm]18018013065
Energy transducerTEG/PV (*1)TEG/PV/MFC (*1)TEGTEG
Operation range of VS [V]1.28~3.00.25~1.10.27~1.00.34~1.2
(VOC = 0.5~2.0 V)
Target output voltage
VPP_TGT [V]
3.31.81.03.0
MPPTProcedureTwo steps in orderTwo steps in parallelTwo steps in orderSingle step
Parameters to be measuredΔVPP, i.e., IPPVS~VMPPTVPP~VPP_TGT(1) VS~VMPPT,
(2) VPP~VPP_TGT
VOC
Parameters to be updated(1) N, (2) ffN(1) Combination of C, N,
(2) f
Combination of C, N
Parameter to be maximizedPOUTPINPINPOUT
Area [mm2]1.032.820.8350.302 (*2)
Maximum power efficiency of CP η C P _ M A X [%]79 (TEG)
89 (PV)
576467
Maximum output power POUT_MAX [mW]0.041.620.401.11
POUT_MAX/Area [mW/mm2]0.040.570.483.66 (*2)
(*1) PV: photovoltaic, MFC: microbial fuel cell; (*2) ADC to measure VOC is not included.
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Nono, K.; Tanzawa, T. One-Dimensional Maximum Power Point Tracking Design of Switched-Capacitor Charge Pumps for Thermoelectric Energy Harvesting. Electronics 2023, 12, 1203. https://doi.org/10.3390/electronics12051203

AMA Style

Nono K, Tanzawa T. One-Dimensional Maximum Power Point Tracking Design of Switched-Capacitor Charge Pumps for Thermoelectric Energy Harvesting. Electronics. 2023; 12(5):1203. https://doi.org/10.3390/electronics12051203

Chicago/Turabian Style

Nono, Koichi, and Toru Tanzawa. 2023. "One-Dimensional Maximum Power Point Tracking Design of Switched-Capacitor Charge Pumps for Thermoelectric Energy Harvesting" Electronics 12, no. 5: 1203. https://doi.org/10.3390/electronics12051203

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