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Review

A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges

by
Omnia Samy
1,
Shuwen Zeng
2,
Muhammad Danang Birowosuto
3,4 and
Amine El Moutaouakil
1,*
1
College of Engineering, United Arab University, P.O. Box 15551, Al Ain 15551, United Arab Emirates
2
XLIM Research Institute, UMR 7252 CNRS/University of Limoges, 123, Avenue Albert Thomas, 87060 Limoges CEDEX, France
3
CNRS International-Nanyang Technological University (NTU), Thales Research Alliance (CINTRA), Singapore 637553, Singapore
4
Department of Renewable Energy Engineering, Universitas Prasetiya Mulya, Kavling Edutown I.1, Jl. BSD Raya Utama, BSD City, Tangerang 15339, Indonesia
*
Author to whom correspondence should be addressed.
Crystals 2021, 11(4), 355; https://doi.org/10.3390/cryst11040355
Submission received: 24 February 2021 / Revised: 16 March 2021 / Accepted: 23 March 2021 / Published: 29 March 2021

Abstract

:
Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its outstanding properties that allowed its usage in different applications. Its band gap and its distinctive structure make it a promising material to substitute graphene and other semiconductor devices. It has different applications in electronics especially sensors like optical sensors, biosensors, electrochemical biosensors that play an important role in the detection of various diseases’ like cancer and Alzheimer. It has a wide range of energy applications in batteries, solar cells, microwave, and Terahertz applications. It is a promising material on a nanoscale level, with favorable characteristics in spintronics and magnetoresistance. In this review, we will discuss MoS2 properties, structure and synthesis techniques with a focus on its applications and future challenges.

1. Introduction

Molybdenum disulfide (MoS2) is an inorganic compound of the transition metal dichalcogenides (TMDs) series, that has one atom of Molybdenum and two atoms of Sulfur. Dichalcogenides are chemical compounds consisting of a transition metal, like Molybdenum, and a chalcogen (element of group 16 in the periodic table) like sulfur (S) [1]. The physical, chemical, and electronic properties of this compound grabbed the attention of many researchers and were found promising materials to substitute previously used semiconductor and/or graphene devices. As the world is moving towards miniaturization, researchers were searching for a material to substitute semiconductor devices that seemed to reach an end when entering the nanoscale era [2]. While semiconductors devices based on Silicon were facing quantum and tunneling effects on a nanoscale level, MoS2 showed favorable and promising electronic and quantum characteristics when going from bulk to two-dimensional (2D) structure [3].
MoS2 seems to solve many problems facing previous devices [4,5,6,7,8], it has a large band gap (~1.8 eV) which changes from an indirect gap to a direct one in thin structures. This would permit downscaling electronic devices, rather than graphene which nearly has a zero-band gap [9,10]. It does not have surface dangling bonds and has high mobility even with high-κ dielectric materials. It is ideal for thin-film transistors, and its fabrication is simple which means large production yield and low cost [11,12]. The covalent bonds between Molybdenum and Sulfur and the Van der Waals bonds between its layers make it optimal for gas sensing. One of the major problems with Silicon devices was that related to the metal-semiconductor interface [13]. MoS2 has less contact resistance and high performance. In other words, MoS2 has potency to be used in 1 nm gate transistors with excellent on/off switching characteristics and high efficiency [14].
Silicon transistors fabrication faced some problems on the bulk scale that were overcome by new structures such as multi-gate transistors, but when going down to the nanoscale, the fabrication process seems to reach an end. The metal interconnection lines between transistors have high density and are very narrow, which cause an increase in resistance and capacitance between interconnect lines and high delays. Tunneling problems are more obvious with thin gate oxides and when trying to substitute silicon dioxide with other high-κ dielectric materials, more serious problems like thermal instability, channel mobility degradation, incompatibility with the interface aroused. All these issues lead to performance degradation, and high cost with a small yield. The high lithography resolution needed for small half-pitch (HP) ~20 nm, is not easily achieved and needs high techniques and tools in lithography [15,16]. On the other side, MoS2 showed easier and simpler ways of synthesis and device fabrication [17]. It is easily prepared by spreading the molybdenum metal and sulfur and letting them self-propagate under a high temperature [18]. A MoS2 field effect transistor was fabricated in [19] by immersing it in an electrolyte, the device showed lower contact resistance and a better gate control.
MoS2 has a wide range of applications in different fields. Like Silicon and graphene, it has applications in biosensing, and optical sensors but the most important ones are those related to bio-applications like DNA, cancer, and Corona Virus detection [20,21,22,23]. While Silicon and graphene were still under study in their compatibility with human bodies, a study, in [24], showed that MoS2 may be very effective in curing cancer and Alzheimer’s disease. It also showed that the compound has no biological interaction which makes it safe for injection in human bodies. Another study in [25] proposed a biocompatible device made of MoS2 to restore some visual malfunctioning. The compound applications are not restricted to electronics, but it can serve as a lubricant [26] and is used in hydrogen evolution reactions. It is a suitable material for batteries’ electrodes [27]. Indeed, MoS2 properties and structure made it promising for several electronic, sensing, microwave, and terahertz applications.
Many research articles and reviews have been published on the properties, synthesis and applications of MoS2 material, but we lack a comprehensive comparison of the different MoS2 structures and their properties in terms of applications, especially between the bulk and monolayer MoS2. Besides, the use of MoS2 as a sensing material in the bio-medical, optoelectronic and IoT-related fields was not sufficiently highlighted in the literature. Newer applications such as in the terahertz technology, the hydrogen detection, hydrogen generation and oil/water separation remain among the less covered areas of studies for MoS2. In this review, we will first identify the different MoS2 structures and their synthesizing techniques in details, and we will compare all the structures in terms of their main optical, lattice and electrical properties and applications. Synthesis techniques will be extensively covered with their main pros and cons. Then we will provide a more detailed review on the wide range applications of MoS2 in electronics, medicine and other new fields of research such as the terahertz field and the hydrogen-related technologies. Finally, we will discuss and compare the different challenges facing the development of MoS2 applications in different fields of study, since they were not discussed in detail in previous studies that focused more on synthesizing techniques [27,28] or a specific kind of application [29,30,31].

2. Structure and Properties

MoS2 structures differ from 3D, 2D, one-dimensional (1D), or dot structures. Its characteristics and applications also change from one dimension to another, they can be semiconducting, metallic or superconducting. It exists in several layers and shapes. Its bulk (3D) structure can be tri-agonal (T), hexagonal (H), and Rhombohedral (R), where 2H MoS2 means 2-layer hexagonal shape MoS2. The three main structures are 1T, 2H and 3R, where the 1T phase coordinates in an octahedral structure, 2H and 3R in a trigonal prismatic structure [32,33] as shown in Figure 1. The lattice constants for each structure are shown in Table 1 [34]. The 1T structure is known to be metallic while the other two are semiconducting. The monolayer of hexagonal MoS2 is also semiconducting. Both 2H and 3R are used as dry lubricants. Due to the nonlinear optical properties of 3R phase it is used in nonlinear optical mass sensing in quantum measurements and biomedicine [35]. As an example, for gas sensors, the different phase materials of MoS2 can be interesting in obtaining high sensitivity and rapid desorption [36].
1H MoS2 is the most stable configuration and it is formed of one layer of Sulfur and one layer of Mo where S-Mo-S are attached through strong covalent bond like a sandwich, with a thickness of approximately 0.65 nm [28], The sandwiched S-Mo-S layers are attached through weak Wander Val forces [37]. The conductivity of nano MoS2 depends on the temperature and thickness of the flakes, where conductivity increases with the temperature increase and decreases with increasing the thickness till it reaches the bulk structure [38]. The binding energies and photoluminescence properties are summarized in Table 2 [39].
MoS2 exists in different 2D structure like nanosheets, and nanoribbons or 1D structures as nanowires and nanotubes, or 0D structure as quantum dots and nanoplatelets. The thickness of 2D nanoribbons was found to be of 1 to 3 layers of MoS2, while the thickness of 1D nanowires (NW) can have lengths from 14 to 30 nm and a width of 0.6 nm approximately [40]. The structure of 1D nanoplatelets and their properties were investigated in [41]. The nanoplatelets are 12–30 nm with one-unit cell width. They have very high catalytic activity for hydrodesulphurization. The quantum dots range from 2 to 10 nm in size. They have higher band gap than nanosheets, and stronger bonds between Mo atoms than monolayers. The change in band gap of MoS2 from one dimension to another, changes the photoluminescence characteristics and thus has different optical properties according to its dimension. Additionally, monolayers or other low dimension forms are also easy to be implemented in optical nanostructures to enhance the photoluminescence intensities and emission rates through light-matter interactions [42,43,44]. This is a strong motivation for MoS2 to be included in optical applications [29].

2.1. Optical Properties

The absorption coefficient and refractive index are the parameters that determine the response of a material when a certain wavelength passes through it. The absorption coefficient determines the distance the spectrum pass inside the material before being absorbed. A high absorption coefficient means high attenuation to the wave applied. Semiconductors have high absorption coefficients for short wavelengths (high energy and frequency spectrum) and low absorption coefficients for long wavelengths (they do not have enough energy to excite electrons from the valence band to the conduction band). MoS2 has a relatively large absorption coefficient for the wavelengths from 400 nm to 500 nm with a sharp decay at 500 nm [45]. The key factor behind the wide use of MoS2 in optoelectronics is its tunable bandgap that changes with size and structure; Different bandgaps mean tunable photoresponsivity (R), specific detectivity, and response time [46], and thus, a wide range of applications. The MoS2 multilayers and monolayers have a high refractive index of more than 2, where it can be used in coating. Since the photoluminescence (PL) spectra are affected by the band gap, doping, and structure of the material, MoS2 has different PL activity. It has a peak exciton (A) in a single layer MoS2. The PL properties of monolayer MoS2 are enhanced by adding H2O2 solution [47], where it acts as a strong oxidizer without changing the crystalline structure of MoS2. TMDs are known for their low PL quantum yield (QY) which is the ratio of the number of emitted photons to the number of generated electron-hole pairs and they are between 0.01 to 6%. The work in [48] was able to raise the QY of MoS2 to 95% using a chemical treatment of an organic superacid. The observed lifetime of MoS2 carriers were nearly 10.8 ns, which opens the way to be used in high-performance lasers and solar cells.

2.2. Mechanical Properties

A monolayer MoS2 has high strength, less than that of graphene and good elasticity similar to that of graphene oxide, with Young’s modulus of 0.33 ± 0.07 TPa [28]. A single layer of MoS2 has more flexibility than bulk structures, where its Young’s modulus is 0.24 TPa. Unlike other semiconductors, the flexibility of MoS2 prevents the deformation and band gap shifts that may happen to its crystalline structure when subjected to strain. However, the mechanical strain is used to alter MoS2 electronic characteristics and transform them from semiconductors to metals. It transforms the direct band gap of MoS2 monolayers to an indirect one and high strain values can cause structure deformation and transform MoS2 to metal [49].

2.3. Electronic Properties

In this section, we are going to discuss the density of states and the band structure of MoS2. Multilayer MoS2 are known to have an indirect band gap of 1.2 eV, which increase with the decrease in the number of layers until we have a direct band gap of 1.8 eV in monolayer MoS2 [50]. Although the MoS2 bandgap value is good, it is still far from 1.12 eV direct bandgap of Silicon [39]. The mechanical strain affects the band gap of MoS2 and changes it from direct to indirect band gap and transfers the material from a semiconducting material to a metallic one. The 4d and 3p orbitals in Mo and S respectively, determines the properties of MoS2. The projected density of states (PDOS) of bulk and monolayer MoS2 are nearly the same, but there are some peaks in PDOS in case of monolayer MoS2 [51]. A monolayer MoS2 changes to an n-type semiconductor when doped with chromium, copper, and scandium (Sc) and to a p-type when doped with Nickel or Zinc [52]. Doping with Titanium (Ti) transfers MoS2 to a p-type or n-type semiconductor according to the levels and sites of doping. At low doping levels of Ti below 2.04%, MoS2 behaves as a p-type. In case of interstitial doping of Titanium (Ti) at 3.57% doping levels, the covalent bond between MoS2 and Ti are strong which increases the surface dipole moment that induces a reduction in electron affinity of 0.49 eV, where it behaves as an n-type. At high doping levels of 7.69%, the Fermi level shifts towards the conduction band and merge into the conduction band, where the surface dipole moment declines and the electron affinity rises, pinning Fermi level over the conduction band. In this case, MoS2 changes to a ferromagnetic half-metal with spin polarization equals to 1, that is promising for spintronics. On the other side the substitutional doping of Ti did not show any change in electronic properties for the three doping concentrations (2.04%, 3.57%, 7.69%).

2.4. Magnetic Properties (Spintronics)

While moving towards the nanoscale era and the evolution of spintronics, the study of electron spin of a promising structure like MoS2 became a must. TMDs are known to be non-magnetic, and if we managed to add magnetism to them, they can be used as tunable semiconductors [53]. A study in [54] studied the magnetic behavior and characteristics of multilayer MoS2 specifically. The study showed that MoS2 has a long spin diffusion length of 235 nm and that an in-plane spin polarization can suppress the electron spin-relaxation. The work in [52] showed that MoS2 attains semi-metallic ferromagnetic properties when doped with Sc and a unity spin polarization value, which is favorable in spintronics.

3. Synthesis

There are different techniques used to obtain material layers Figure 2, and each one of them results in different quantities, shapes, and sizes. Mainly the approaches used in synthesizing TMDs nanostructures, are the top-down approach and the bottom-up approach [55,56]. The first approach depends on etching crystal planes from a substrate that has the crystals laid over it, while in the second approach, the crystals are stacked over the substrate. Exfoliation is one of the top-bottom techniques for obtaining MoS2 layers. The weak Van der Waal forces between layers of TMDs paved the way in front of different exfoliation synthesizing techniques [57]. Mechanical exfoliation is done using a sticky tape which is rubbed out and shifted on a substrate having MoS2 flakes over it. The method gives low yield and is good for lab use. Exfoliation can also be done in the liquid phase by adding a chemical compound and stirring, bubbling, or grinding. This method is simple and cheap but has low quality. The low yield in liquid exfoliation was avoided using carbon aerogel composites in [58]. The synthesizing is fast and completed in 30 minutes. It also avoids pyrophoric materials that are typically used in liquid exfoliation and increases the electrical conductivity and porosity of MoS2. Sonication is one of the techniques that showed simple synthesis when used with liquid exfoliation [59,60]. It disposes of the use of hazardous materials used in liquid exfoliation. It is based on ultrasonic waves emitted from a probe in shape of bubbles that peels MoS2 layers when they burst. The challenge in using sonication assisted techniques is that it produces relatively small area MoS2 nanosheets that limits its use in practical applications. Generally Top down techniques are said to have low controllability, and scalability and high cost [55]. The yield is increased to >90% when using ultrasound sonication with supercritical carbon in [61] with an intercalating solvent N-methyl-2-pyrrolidone (NMP). The method is fast, simple and scalable. Sputtering is used to prepare layers of MoS2 to be used as lubricants, the layers have a low friction coefficient, but these frictional properties can be changed under humidity, especially for thin films of MoS2.
Physical layer deposition (PVD) is one of the bottom-up techniques that includes ion implantation like molecular beam epitaxy (MBE) [62]. The method can be applied only to thin layers of MoS2 and the resulting grain sizes are variable [63]. Chemical vapor deposition (CVD) is applied to thin and thick layers, where Mo is laid over a substrate and Sulfur vapor passes over it. This method has good quality, but low yield. The atomic layer deposition (ALD) method is used to fabricate thick and thin films. The method is considered efficient and the layers have fewer impurities that can be used in different applications, including electronics and sensors. MoS2 layers can be synthesized with the help of chemical solutions, using hydrothermal and solvothermal reactions wherein both cases Mo and S react in an aqueous solution above the boiling point and in a nonaqueous solution at high temperature, respectively. The size and shape of the layers can be controlled where we can get powder and thin films of MoS2 by this method. It is considered cheap and scalable [64].
In [65], MoS2 is synthesized using a liquid organic precursor on an insulating substrate using CVD. The used method is more reproducible and is used to obtain larger areas of MoS2 layers than those obtained with methods using powder Molybdenum oxide and sulfur powder. Another method in [66] used thermal evaporation and ALD, where it used metalloporphyrin as a promoter layer. The method allowed to manipulate the carrier density and conductivity of MoS2 according to the thickness of the metalloporphyrin layer used. It is used to produce MoS2 nanosheets on a large scale. In [18], MoS2 is synthesized using self-propagating, under high temperature, where Mo nanopowders and elementary Sulfur are used. The mixture is put into cylinders and then under pressure. The main resulting structure is 2H MoS2, but there are other phases like rhombohedral MoS¬2 and Mo2S3. Thermal sulfidation is another method like CVD that uses Sulfur gas as a precursor. It uses a Mo [67] or Mo-oxide [68] film deposited on a substrate, where evaporated sulfur passes over it under certain temperature. The method is known to reduce the effect of gas flows that occurs in CVD, and results in self-aligned patterns of MoS2. The sulfidation of two different oxides of Mo: MoO3, and MoO2 discussed in [68], showed more stable MoS2 monolayer films, produced from MoO2. The films were integrated with bottom-gate transistors and they showed on/off ratio of 103–104 and electron mobility of 10−4 cm2/V·s. The PL spectrum of the synthesized monolayers has an exciton peak at 1.89 eV.
Another approach to avoid the drawbacks of exfoliation and intercalation or liquid exfoliation like low electrical performance (low mobility of 0.3-0.4 square centimeters per volt per second and low on/off ratios ~10–100) is using electrochemical intercalation [69]. The method involves quaternary ammonium molecules into 2D crystals, with mild sonication and exfoliation techniques. The technique gives high performance MoS2 nanosheets with 10 square centimeters per volt per second mobility, and on/off ratios of 106. Table 3 summarizes some synthesis techniques that are already known until now.

4. Applications

MoS2 optical, electrical, and chemical properties allowed this metal dichalcogenide to have a wide range of applications in different fields. Its electronic properties allowed it to enter the nanoelectronics and sensor application field and in turn the medical field. These special electronic properties, together with its biocompatibility, open up the way to further medical and curing applications. The photoluminescence and chemical properties broadened its application field. MoS2 applications are countless, and, in this review, we are trying to introduce the newest and the most important ones.

4.1. Electronics Applications

In this part, we will discuss electronic, optoelectronic, and sensing applications. MoS2 monolayers achieved good device characteristics at 5 nm channel length FET [70]. It has on/off ratio of 106 and a subthreshold swing of ~65 mV/decade, but with low on current of ~700 μA/μm. In [71], a 2D MoS2 field effect transistor (FET) was developed to be used in operational amplifiers (OPA) in analogue circuits, the device has good performance with an open-loop gain of 36 dB at low frequency and high uniformity. The idea that MoS2 can be integrated with flexible substrate materials like Kapton opens the way to be used in analogue circuits more than other bulk semiconductors. The device has acceptable bandwidth and gain (the gain roll-off after 5 kHz), compared to other Silicon devices. A heterostructure of MoS2 and amorphous Silicon was developed to be used as a photodetector in [72]. The proposed photodetector has a fast response and simple fabrication so it is ideal to be used in bioimaging like x-ray imaging devices. In [73], a high-quality photodetector, including MoS2 is proposed using CVD and PVD techniques. The photodetector is suitable for UV applications. It has high photocurrent gain of 1.6 and a specified detectivity of 4.32 × 108 Jones. It has external quantum efficiency (EQE), which is the amount of extracted free charge carriers converting to photo flux- of ~1.0 × 1010 at 365 nm. According to the thickness of the MoS2 layer used, the PL and Ramen spectra peaks are shifted. MoS2 has a role in photodetectors in the field of robotics, where an efficient nanoscale photodetector of a monolayer MoS2 was proposed in [74]. The detector consumes a low amount of energy (from 1 to 1000 nanojoules) with a small fingerprint of (~1 μm × 5 μm).
A Sulfur treatment with Alcohol is performed to enhance the contact resistance of MoS2 FETs of gate lengths (500 to 80 nm) to be 1.3 kΩ [75]. An enhancement in the on/off switching characteristics and subthreshold swing (SS) of MoS2 FET using Ag is presented in [76], where the device has SS ~4.5 mm/decade with less leakage and steep on/off characteristics. MoS2 monolayer is used in nonvolatile memory applications [77], with high charge storage capacity.
A low power MoS2 RF thin film transistor (TFT) was proposed in [78] that can be used in IoT systems like amplifiers and mixers. It can work at relatively high strain ~3%. The on/off ratio MoS2 FETs exceeds 108 [79]. The band gap structure of TMDs can be engineered using strain, or dielectric screening [80]. Another low power analogue memory in [81] can be integrated with computing devices to enhance their efficiency. Finding a low contact resistance in TMDs based devices is still a challenge, due to the Fermi level pinning that occurs in metal/2D TMD interface, but in [82] a MoS2/MoO3 tunnel field effect (TFET) was introduced, making use of oxygen vacancies in the metal oxide that aligns with the valance band of MoS2 and assure a good contact with MoS2. Nanoscrolls (NSs) of MoS2 is obtained in [83] using one drop of ethanol. The NSs are said to have 10 times higher mobility than monolayer MoS2 and with a 100% yield.
A neuromorphic image sensor based on MoS2-organic heterostructure similar to human vision system in [84], showed simple design and better image in case of noisy inputs Figure 3. The idea of the image sensor lies in the quasi-linear time-dependent photocurrent generation and prolonged photocurrent decay, by the trapping effect of MoS2 stack.

4.2. Medical Applications

MoS2 has a role in diseases’ detection and curing, making use of its PL, chemical properties, and biocompatibility. Molybdenum disulfide/graphene oxide (MoS2/GO) with doxorubicin (a chemotherapeutic agent) was found to cure lung cancer [85], the nanocomposite showed good results in vitro, and in vivo and was experimented on mice lungs Figure 4. MoS2/GO was compared with other complexes (doxorubicin (DOX), Lysine (Lys)-MoS2) and it showed best results with GO and DOX. Mo is known to form a linkage with DOX and though serves as a drug delivery. In [20], a biosensor microfluidic device was proposed that detect an avian Coronavirus using 2D MoS2. In [86], a MoS2/ graphene oxide (RGO) Field Effect Transistor Sensor to detect Hydrogen Peroxide (H2O2) is proposed. H2O2 is a biomarker for many diseases like cancer, and Alzheimer’s disease, Figure 5. In [23], MoS2 nanosheets are used to detect Prostate antigens and in [21], MoS2 flakes were used as biomarkers for breast cancer based on the PL properties of MoS2. Using a bottom-up synthesizing technique and defect engineering in [87], the photodynamic property of MoS2 quantum dots (QD) was able of killing cancer cells with high efficiency.
MoS2 has a wide range of applications in microfluidic devices and immunosensors, making use of its chemical and photoluminescence properties [88]. MoS2 nanosheets were used with microfluidics electrode for detecting Salmonella typhimurium (S.typhimurium) [89] the proposed device has fast detection and high sensitivity and can be used for other food related pathogens like E.coli, Cholera. Depending on the dye-quenching properties of MoS2, its nanosheets were used with microfluidic devices to detect single-stranded DNA (ssDNA), where MoS2 showed high fluorescence quenching within few minutes, besides it behaves differently towards ssDNA and double-stranded DNA (dsDNA) where it did not affect the dye of dsDNA [22]. This opens the way for various DNA and diseases’ detection, especially cancer. Many diseases like diabetes, digestive disorders and cancer cause a change in the amino acid chain. Amino acids are the building blocks of proteins. The detecting of amino acids is more complex than DNA, since they have 20 bases rather than four in case of DNA and changing their sequence gives different kinds of proteins. Nanopores were recently used in detecting DNA and amino acids, where the amino acid is forced to pass through a nanopore, then the ionic current and the residence time is measured. Each amino acid or DNA has a different ionic current and residence time; however, they are very similar in case of amino acids which make them hard to differentiate. Machine learning techniques are then used to detect the sequence of the amino acids. Biomolecules are easily stuck to MoS2 so they can be easily detected. They also have better signal to noise ratio. The MoS2 nanopore with machine learning is used to detect various kinds of amino acids, with high accuracy up to 99.6% and in a very short time (several ps) [90].
An interesting research in [91] used nanohole-enriched MoS2 (NR-MoS2) nanosheets to destroy bacteria and biofilms. The cure is based on the electron transport between NR-MoS2 and the bacteria, where NR-MoS2 is a nanosheet of MoS2 defects and holes. The results were excellent in vivo and vitro and MoS2 showed high biocompatibility. The idea behind antimicrobial nanomaterials is that they act as anti-bacterial but without the generation of resistance that happens in typical antibiotics.

4.3. Sensing Applications

The sensing applications of MoS2 are related, where we can’t separate the use of optical, medical, and electronic applications in sensing, but this section summarizes most of the sensing applications reported in the literature. Figure 6 divides the sensing applications into four main categories: biosensing, gas sensing, refractive index sensing, and photo-sensing (photodetectors)) [92]. Each application includes different types of sensors, for example, biosensing includes electrochemical sensors, FET based sensors, optical and surface plasmon resonance (SPR) sensors. Both gas sensors [93,94,95,96] and photodetectors [72,73,74] are FET-based sensors. Electrochemical sensing is being studied recently for ultrasensitive sensing, and MoS2 shows sensitive electrochemical detection properties when combined with other materials where a notable change in the electrochemical impedance occurs. This technique was used in [89] to detect food pathogens.
Based on the fluorescence and quenching properties of MoS2, it can be used in biosensing to detect DNA, cancer biomarkers, and different amino acids [21,23,97]. FET-based sensors are also used for biomolecular sensing like DNA, antigens, proteins, biotin, and pH values [97]. Optical sensors are mainly based on the PL characteristics and fluorescence quenching and recovery properties of MoS2. It can be used in detecting DNA, H2O2, and ion sensors.
The SPR biosensors, optical and refractive index biosensors are all related. SPR sensors are based on an optical technique that urges the emission of electromagnetic waves (plasmons). The propagation of plasmons over the material surface is very sensitive to any refractive index change on the surface, and though can detect thin films on the surface [98]. MoS2 is used with other materials in a SPR sensor to enhance sensitivity to 101.42 °/RIU [99]. It shows a polarization-dependent optical absorption that can be integrated in waveguides to sense refractive index [100]. Table 4 gives a summary of the sensing applications along with the MoS2 property that enables such sensing.

4.4. Miscellaneous Applications

MoS2 has terahertz and microwave applications [105,106] where a tunable terahertz wave reflector made of MoS2, SiO2, gold was proposed in [107]. The proposed structure enhances the design of beam manipulation devices and can be used in THz radiation control [108] as an alternative to complex antenna structures [109,110,111,112,113,114]. A terahertz modulator based on MoS2 on Silicon was presented in [115], with higher modulation efficiency when compared to graphene-based devices.
It is used in hydrogen detection [116] and generation [117] (hydrogen evolution reactions HER). Hydrogen production is one of the demanded industries due to its low toxicity and its use in many important fields like the fuel industry [118] and essential chemical processes. MoS2 represents a cheap electrochemical hydrogen generation method [119], and it is said to substitute platinum-based catalysts in hydrogen generation processes. The strategy used was based on synthesizing edge-terminated MoS2 nanosheets with wide interlayer spacing under microwave heating technique. The work presents a new catalyst design concept. It also has a role in Oxygen evolution reactions (OER) and CO2 reduction where it reduces it to CO [120].
MoS2 has a role in recent environmental issues like adsorption of Organic Contaminants [121], and oil-water separation [122]. In water separation, MoS2 nanosheets were used to develop a sponge for oil-water separation. MoS2 has a strong hydrophobicity property that it absorbs other organic solvents with high selectivity. Table 5. provides a comprehensive list of the reported MoS2 applications with the field of interest.

5. Challenges

Molybdenum disulfide material is still under study, although it has favorable chemical, photonic, and electronic characteristics, there are still more to be done regarding its way of preparation and compatibility with other materials, as summarized in Figure 7.
Although MoS2 showed acceptable electronic characteristics, it has less mobility (30–60 cm2/Vs) and higher band gap (1.8 eV) than Silicon (~1000 cm2/Vs and 1.1eV) [129,130,131]. MoS2 FETs have some issues with mobility, electro-statistics and strain below 6.6 nm gate lengths [132], which means we cannot achieve the required sub 10 nm International Technology Road Map (ITRS). We are still facing challenges in synthesizing techniques for the production of different 2D structures that are hard to separate. Moreover, the stability of MoS2 against moisture, humidity, and other environmental conditions needs more study [133].
The researchers in [134] studied the effect of impurities and atomic vacancies of Mo and S in MoS2 structure. The absence of Mo or S and especially Mo vacancy leads to gap states that result in a noticeable current at low voltage biasing. Atomic vacancies affect the electron and hole transport of MoS2.
MoS2 layers like other 2D materials are prone to laser damage when used as optical modulators [135]. The fast response of these materials transfers a remarkable portion of light into heat that can result in complete damage or burn to the material. Additionally, MoS2 structure has some defects that cause performance degradation and low reliability when used in device applications. As an example, MoS2 layers fabricated through CVD have many dangling bonds and high reactivity. The grain boundaries and point defects were studied in [136], while those studies are references to control MoS2 defects and other TMDs using defect engineering methods.
More studies are needed for the lattice mismatch that occurs between monolayers. The mismatch cause band gap moiré and affect spectroscopy of MoS2 bilayer [137].
Although MoS2 has mechanical flexibility and strength that facilitates its strain engineering, the material exhibits nonuniform strain distribution. This happens because of the large number of atoms involved under strain which needs further study [138,139]. The non-equilibrium in MoS2 structure is related to the temperature and the heating rate applied during synthesizing [140], which calls for new synthesizing methods.
Although MoS2 is said to have good biocompatibility, bio absorbability, cancer killing, and anti-bacterial effect, a very important research published in Nature in 2018 states a highly toxic effect of MoS2 nanosheets [141]. MoS2 were investigated to induce cytotoxic effect and cell damage when interacting with tumor cells, while no effect in case of normal cells. The cytotoxic effect depends on the concentration and number of layers of MoS2 that can be manipulated in the future. The nano- and micro- MoS2 sheets showed a change in the metabolic profiles on the intestine of mice [142]. Also nano-MoS2 sheets showed greater intestine inflammation. Both changed the intestinal microbiota. Table 6 provides a summary of the reported challenges facing MoS2 in the literature, and their types.

6. Conclusions

In this review, we highlighted the different MoS2 structures and their synthesizing techniques in detail, and we provided a comprehensive comparison between all the structures, in term of their main optical, lattice and electrical properties and applications. Synthesis techniques were also covered with their main advantages and inconveniences. A review of the wide range applications of MoS2 from electronics, medicine to new fields of research such as the terahertz field and the hydrogen-related technologies was made. We also discussed and compared the different challenges facing the development of MoS2 applications in different fields of study, since they were not discussed in detail in previous studies that focused more on synthesizing techniques or specific kinds of applications.
MoS2 is a promising material with a wide range of applications. Its outstanding properties and band gap characteristics allowed its use in biosensing, electronics, optoelectronics, and energy applications. It has good biocompatibility and bio absorbability that allowed its use in several diseases’ curing like cancer, Alzheimer, and Coronavirus. Its photoluminescence properties helped in DNA detection. It is believed that MoS2 can substitute Silicon semiconductor devices. On the other hand, there are some challenges facing MoS2 that needs to be studied, like managing its impurities, lattice imperfections, and finding the best way of synthesizing that guarantees the largest yield, the cheapest cost, and the highest quality without changing its chemical and physical properties.
In a summary, this review provides an understanding of the major challenges facing the development of MoS2-based solutions, especially in the untapped new fields of applications. The integration of MoS2 with other 2D nanomaterials, such as graphene, in hybrid structures can provide a tradeoff between the shortcomings of both materials and a better combination of their main advantages to overcome the existing challenges.

Author Contributions

Conceptualization, O.S. and A.E.M.; methodology, O.S. and A.E.M.; writing—original draft preparation, O.S. and A.E.M.; writing—review and editing, M.D.B., S.Z., and A.E.M.; supervision, A.E.M. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by United Arab Emirates University UPAR project, grant number 31N393.

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

Not applicable.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. He, Z.; Que, W. Molybdenum Disulfide Nanomaterials: Structures, Properties, Synthesis and Recent Progress on Hydrogen Evolution Reaction. Appl. Mater. Today 2016, 3, 23–56. [Google Scholar] [CrossRef]
  2. Hersam, M.C. Emerging Device Applications for Two-Dimensional Nanomaterial Heterostructures. In Proceedings of the 2015 73rd Annual Device Research Conference (DRC), Columbus, OH, USA, 21–24 June 2015; IEEE: Columbus, OH, USA, 2015; p. 209. [Google Scholar]
  3. Zhao, G.-Y.; Deng, H.; Tyree, N.; Guy, M.; Lisfi, A.; Peng, Q.; Yan, J.-A.; Wang, C.; Lan, Y. Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers. Appl. Sci. 2019, 9, 678. [Google Scholar] [CrossRef] [Green Version]
  4. Del Alamo, J.A. Nanometre-Scale Electronics with III-V Compound Semiconductors. Nature 2011, 479, 317–323. [Google Scholar] [CrossRef] [PubMed]
  5. Geim, A.K.; Grigorieva, I.V. Van Der Waals Heterostructures. Nature 2013, 499, 419–425. [Google Scholar] [CrossRef]
  6. Current, M.I. Process and Metrology Challenges for Nano-Scale Electronics. In Proceedings of the 2016 IEEE Workshop on Microelectronics and Electron Devices (WMED), Boise, ID, USA, 15 April 2016; IEEE: Boise, ID, USA, 2016; pp. 1–5. [Google Scholar]
  7. Butler, S.Z.; Hollen, S.M.; Cao, L.; Cui, Y.; Gupta, J.A.; Gutiérrez, H.R.; Heinz, T.F.; Hong, S.S.; Huang, J.; Ismach, A.F.; et al. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene. ACS Nano 2013, 7, 2898–2926. [Google Scholar] [CrossRef]
  8. Bhat, N. Tunable Steep Slope MoS2 Transistor. In Proceedings of the 2018 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, 15–17 August 2018; IEEE: Kuala Lumpur, 2018; p. C1. [Google Scholar]
  9. Novoselov, K. Beyond the Wonder Material. Phys. World 2009, 22, 27–30. [Google Scholar] [CrossRef]
  10. Moutaouakil, A.E.; Kang, H.-C.; Handa, H.; Fukidome, H.; Suemitsu, T.; Sano, E.; Suemitsu, M.; Otsuji, T. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device. Jpn. J. Appl. Phys. 2011, 50, 070113. [Google Scholar] [CrossRef] [Green Version]
  11. Yoo, G.; Lee, S.; Yoo, B.; Han, C.; Kim, S.; Oh, M.S. Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes. IEEE Electron Device Lett. 2015, 36, 1215–1218. [Google Scholar] [CrossRef]
  12. Das, S. 2D Materials for Ubiquitous Electronics. In Proceedings of the 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, Japan, 13–16 March 2018; IEEE: Kobe, Japan, 2018; pp. 19–20. [Google Scholar]
  13. Hiraki, A. Recent Developments on Metal-Silicon Interfaces. Appl. Surf. Sci. 1992, 56–58, 370–381. [Google Scholar] [CrossRef]
  14. Desai, S.B.; Madhvapathy, S.R.; Sachid, A.B.; Llinas, J.P.; Wang, Q.; Ahn, G.H.; Pitner, G.; Kim, M.J.; Bokor, J.; Hu, C.; et al. MoS2 Transistors with 1-Nanometer Gate Lengths. Science 2016, 354, 99–102. [Google Scholar] [CrossRef] [Green Version]
  15. Hoefflinger, B. Nanolithography. In NANO-CHIPS 2030: On-Chip AI for an Efficient Data-Driven World; Murmann, B., Hoefflinger, B., Eds.; The Frontiers Collection; Springer International Publishing: Stanford, CA, USA, 2020; pp. 41–45. ISBN 978-3-030-18338-7. [Google Scholar]
  16. International Roadmap for Devices and Systems (IRDS™) 2020 Edition-IEEE IRDS™. Available online: https://irds.ieee.org/editions/2020 (accessed on 10 March 2021).
  17. Iwai, H.; Kakushima, K.; Wong, H. Challenges for future semiconductor manufacturing. Int. J. High Speed Electron. Syst. 2006, 43–81. [Google Scholar] [CrossRef] [Green Version]
  18. Irtegov, Y.; An, V.; Azhgikhin, M. Study of Nanostructured Metal Sulfides Produced by Self-Propagating High-Temperature Synthesis. In Proceedings of the 2012 7th International Forum on Strategic Technology (IFOST), Tomsk, Russia, 18–21 September 2012; IEEE: Tomsk, Russia, 2012; pp. 1–4. [Google Scholar]
  19. Sha, J.; Xu, W.; Yuan, Z.; Xu, B.; Chen, Y. Fabrication of Liquid-Gated Molybdenum Disulfide Field-Effect Transistor. In Proceedings of the 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), Los Angeles, CA, USA, 9–12 April 2017; IEEE: Los Angeles, CA, USA, 2017; pp. 788–791. [Google Scholar]
  20. Weng, X.; Neethirajan, S. Immunosensor Based on Antibody-Functionalized MoS2 for Rapid Detection of Avian Coronavirus on Cotton Thread. IEEE Sens. J. 2018, 18, 4358–4363. [Google Scholar] [CrossRef]
  21. Catalán-Gómez, S.; Briones, M.; Cortijo-Campos, S.; García-Mendiola, T.; de Andrés, A.; Garg, S.; Kung, P.; Lorenzo, E.; Pau, J.L.; Redondo-Cubero, A. Breast Cancer Biomarker Detection through the Photoluminescence of Epitaxial Monolayer MoS2 Flakes. Sci. Rep. 2020, 10, 16039. [Google Scholar] [CrossRef]
  22. Liu, Y.; Zhang, J.; Shen, Y.; Yan, J.; Hou, Z.; Mao, C. MoS2 quantum dots featured fluorescent biosensor for multiple detection of cancer. RSC Adv. 2017, 7, 54638–54643. [Google Scholar] [CrossRef] [Green Version]
  23. Kong, R.-M.; Ding, L.; Wang, Z.; You, J.; Qu, F. A Novel Aptamer-Functionalized MoS2 Nanosheet Fluorescent Biosensor for Sensitive Detection of Prostate Specific Antigen. Anal. Bioanal. Chem. 2015, 407, 369–377. [Google Scholar] [CrossRef]
  24. Sobanska, Z.; Zapor, L.; Szparaga, M.; Stepnik, M. Biological Effects of Molybdenum Compounds in Nanosized Forms under in Vitro and in Vivo Conditions. Int. J. Occup. Med. Environ. Health 2020, 33, 1–19. [Google Scholar] [CrossRef]
  25. Hossain, R.F.; Deaguero, I.G.; Boland, T.; Kaul, A.B. Biocompatible, Large-Format, Inkjet Printed Heterostructure MoS2-Graphene Photodetectors on Conformable Substrates. NPJ 2D Mater. Appl. 2017, 1, 28. [Google Scholar] [CrossRef] [Green Version]
  26. Liu, L.; Liu, Z.; Huang, P.; Wu, Z.; Jiang, S. Protein-Induced Ultrathin Molybdenum Disulfide (MoS2) Flakes for a Water-Based Lubricating System. RSC Adv. 2016, 6, 113315–113321. [Google Scholar] [CrossRef]
  27. Gupta, D.; Chauhan, V.; Kumar, R. A Comprehensive Review on Synthesis and Applications of Molybdenum Disulfide (MoS2) Material: Past and Recent Developments. Inorg. Chem. Commun. 2020, 121, 108200. [Google Scholar] [CrossRef]
  28. Li, X.; Zhu, H. Two-Dimensional MoS2: Properties, Preparation, and Applications. J. Mater. 2015, 1, 33–44. [Google Scholar] [CrossRef] [Green Version]
  29. Yadav, V.; Roy, S.; Singh, P.; Khan, Z.; Jaiswal, A. 2D MoS2-Based Nanomaterials for Therapeutic, Bioimaging, and Biosensing Applications. Small 2019, 15, 1803706. [Google Scholar] [CrossRef] [Green Version]
  30. Chodankar, N.R.; Nanjundan, A.K.; Losic, D.; Dubal, D.P.; Baek, J.-B. Graphene and Molybdenum Disulphide Hybrids for Energy Applications: An Update. Mater. Today Adv. 2020, 6, 100053. [Google Scholar] [CrossRef]
  31. Winer, W.O. Molybdenum Disulfide as a Lubricant: A Review of the Fundamental Knowledge. Wear 1967, 10, 422–452. [Google Scholar] [CrossRef] [Green Version]
  32. Jiao, Y.; Hafez, A.M.; Cao, D.; Mukhopadhyay, A.; Ma, Y.; Zhu, H. Metallic MoS2 for High Performance Energy Storage and Energy Conversion. Small 2018, 14, 1800640. [Google Scholar] [CrossRef]
  33. Toh, R.J.; Sofer, Z.; Luxa, J.; Sedmidubský, D.; Pumera, M. 3R Phase of MoS2 and WS2 Outperforms the Corresponding 2H Phase for Hydrogen Evolution. Chem. Commun. 2017, 53, 3054–3057. [Google Scholar] [CrossRef] [Green Version]
  34. Krishnan, U.; Kaur, M.; Singh, K.; Kumar, M.; Kumar, A. A Synoptic Review of MoS2: Synthesis to Applications. Superlattices Microstruct. 2019, 128, 274–297. [Google Scholar] [CrossRef]
  35. Manzeli, S.; Dumcenco, D.; Migliato Marega, G.; Kis, A. Self-Sensing, Tunable Monolayer MoS2 Nanoelectromechanical Resonators. Nat. Commun. 2019, 10, 4831. [Google Scholar] [CrossRef] [Green Version]
  36. Cao, J.; Zhou, J.; Chen, J.; Wang, W.; Zhang, Y.; Liu, X. Effects of Phase Selection on Gas-Sensing Performance of MoS2 and WS2 Substrates. ACS Omega 2020, 5, 28823–28830. [Google Scholar] [CrossRef]
  37. Dai, Z.; Jin, W.; Grady, M.; Sadowski, J.T.; Dadap, J.I.; Osgood, R.M.; Pohl, K. Surface Structure of Bulk 2H-MoS2(0001) and Exfoliated Suspended Monolayer MoS2: A Selected Area Low Energy Electron Diffraction Study. Surf. Sci. 2017, 660, 16–21. [Google Scholar] [CrossRef] [Green Version]
  38. Siao, M.D.; Shen, W.C.; Chen, R.S.; Chang, Z.W.; Shih, M.C.; Chiu, Y.P.; Cheng, C.-M. Two-Dimensional Electronic Transport and Surface Electron Accumulation in MoS2. Nat. Commun. 2018, 9, 1442. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  39. Venkata Subbaiah, Y.P.; Saji, K.J.; Tiwari, A. Atomically Thin MoS2: A Versatile Nongraphene 2D Material. Adv. Funct. Mater. 2016, 26, 2046–2069. [Google Scholar] [CrossRef]
  40. Seivane, L.F.; Barron, H.; Botti, S.; Lopes Marques, M.A.; Rubio, Á.; López-Lozano, X. Atomic and Electronic Properties of Quasi-One-Dimensional MoS2 Nanowires. J. Mater. Res. 2013, 28, 240–249. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  41. Elizondo-Villarreal, N.; Velázquez-Castillo, R.; Galván, D.H.; Camacho, A.; José Yacamán, M. Structure and Catalytic Properties of Molybdenum Sulfide Nanoplatelets. Appl. Catal. A Gen. 2007, 328, 88–97. [Google Scholar] [CrossRef]
  42. Saleem, U.; Permatasari, F.A.; Iskandar, F.; Ogi, T.; Okuyama, K.; Darma, Y.; Zhao, M.; Loh, K.P.; Rusydi, A.; Coquet, P.; et al. Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates. Adv. Opt. Mater. 2017, 5, 1700176. [Google Scholar] [CrossRef]
  43. Tahersima, M.H.; Birowosuto, M.D.; Ma, Z.; Coley, W.C.; Valentin, M.D.; Naghibi Alvillar, S.; Lu, I.-H.; Zhou, Y.; Sarpkaya, I.; Martinez, A.; et al. Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs Dimer Nanoscale Antennae. ACS Photonics 2017, 4, 1713–1721. [Google Scholar] [CrossRef]
  44. Hou, S.; Tobing, L.Y.M.; Wang, X.; Xie, Z.; Yu, J.; Zhou, J.; Zhang, D.; Dang, C.; Coquet, P.; Tay, B.K.; et al. Manipulating Coherent Light–Matter Interaction: Continuous Transition between Strong Coupling and Weak Coupling in MoS2 Monolayer Coupled with Plasmonic Nanocavities. Adv. Opt. Mater. 2019, 7, 1900857. [Google Scholar] [CrossRef] [Green Version]
  45. Halim, S.N.M.; Zuikafly, S.N.F.; Taib, M.F.M.; Ahmad, F. First Principles Study on Electronic and Optical Properties of Graphene/MoS2 for Optoelectronic Application. In Proceedings of the 2020 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, 28–29 July 2020; IEEE: Kuala Lumpur, Malaysia, 2020; pp. 29–32. [Google Scholar]
  46. Nalwa, H.S. A Review of Molybdenum Disulfide (MoS2) Based Photodetectors: From Ultra-Broadband, Self-Powered to Flexible Devices. RSC Adv. 2020, 10, 30529–30602. [Google Scholar] [CrossRef]
  47. Cheng, Y.; Wang, J.-Z.; Wei, X.-X.; Guo, D.; Wu, B.; Yu, L.-W.; Wang, X.-R.; Shi, Y. Tuning Photoluminescence Performance of Monolayer MoS2 via H2O2 Aqueous Solution. Chin. Phys. Lett. 2015, 32, 117801. [Google Scholar] [CrossRef]
  48. Amani, M.; Lien, D.-H.; Kiriya, D.; Xiao, J.; Azcatl, A.; Noh, J.; Madhvapathy, S.R.; Addou, R.; Kc, S.; Dubey, M.; et al. Near-Unity Photoluminescence Quantum Yield in MoS2. Science 2015, 350, 1065–1068. [Google Scholar] [CrossRef] [Green Version]
  49. Ghorbani-Asl, M.; Zibouche, N.; Wahiduzzaman, M.; Oliveira, A.F.; Kuc, A.; Heine, T. Electromechanics in MoS2 and WS2: Nanotubes vs. Monolayers. Sci. Rep. 2013, 3, 2961. [Google Scholar] [CrossRef] [Green Version]
  50. Johari, P.; Shenoy, V.B. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains. ACS Nano 2012, 6, 5449–5456. [Google Scholar] [CrossRef]
  51. Kadantsev, E.S.; Hawrylak, P. Electronic Structure of a Single MoS2 Monolayer. Solid State Commun. 2012, 152, 909–913. [Google Scholar] [CrossRef]
  52. Tsai, Y.-C.; Li, Y. Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide. IEEE Trans. Electron Devices 2018, 65, 733–738. [Google Scholar] [CrossRef]
  53. Guguchia, Z.; Kerelsky, A.; Edelberg, D.; Banerjee, S.; von Rohr, F.; Scullion, D.; Augustin, M.; Scully, M.; Rhodes, D.A.; Shermadini, Z.; et al. Magnetism in Semiconducting Molybdenum Dichalcogenides. Sci. Adv. 2018, 4, eaat3672. [Google Scholar] [CrossRef] [Green Version]
  54. Liang, S. Electrical Spin Injection and Detection in Molybdenum Disulfide Multilayer Channel. Nat. Commun. 2019, 8, 9. [Google Scholar] [CrossRef] [Green Version]
  55. Coogan, Á.; Gun’ko, Y.K. Solution-Based “Bottom-up” Synthesis of Group VI Transition Metal Dichalcogenides and Their Applications. Mater. Adv. 2021, 2, 146–164. [Google Scholar] [CrossRef]
  56. Sun, J.; Li, X.; Guo, W.; Zhao, M.; Fan, X.; Dong, Y.; Xu, C.; Deng, J.; Fu, Y. Synthesis Methods of Two-Dimensional MoS2: A Brief Review. Crystals 2017, 7, 198. [Google Scholar] [CrossRef]
  57. Li, M.-Y.; Chen, C.-H.; Shi, Y.; Li, L.-J. Heterostructures Based on Two-Dimensional Layered Materials and Their Potential Applications. Mater. Today 2016, 19, 322–335. [Google Scholar] [CrossRef] [Green Version]
  58. Crane, M.J.; Lim, M.B.; Zhou, X.; Pauzauskie, P.J. Rapid Synthesis of Transition Metal Dichalcogenide–Carbon Aerogel Composites for Supercapacitor Electrodes. Microsyst. Nanoeng. 2017, 3, 17032. [Google Scholar] [CrossRef]
  59. Vignesh; Kaushik, S.; Tiwari, U.K.; Kant Choubey, R.; Singh, K.; Sinha, R.K. Study of Sonication Assisted Synthesis of Molybdenum Disulfide (MoS2) Nanosheets. Mater. Today: Proc. 2020, 21, 1969–1975. [Google Scholar] [CrossRef]
  60. Han, J.T.; Jang, J.I.; Kim, H.; Hwang, J.Y.; Yoo, H.K.; Woo, J.S.; Choi, S.; Kim, H.Y.; Jeong, H.J.; Jeong, S.Y.; et al. Extremely Efficient Liquid Exfoliation and Dispersion of Layered Materials by Unusual Acoustic Cavitation. Sci. Rep. 2015, 4, 5133. [Google Scholar] [CrossRef] [PubMed]
  61. Tan, X.; Kang, W.; Liu, J.; Zhang, C. Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent. Nanoscale Res. Lett. 2019, 14, 317. [Google Scholar] [CrossRef] [PubMed]
  62. Vishwanath, S.; Liu, X.; Rouvimov, S.; Mende, P.C.; Azcatl, A.; McDonnell, S.; Wallace, R.M.; Feenstra, R.M.; Furdyna, J.K.; Jena, D.; et al. Comprehensive Structural and Optical Characterization of MBE Grown MoSe2 on Graphite, CaF 2 and Graphene. 2D Mater. 2015, 2, 024007. [Google Scholar] [CrossRef]
  63. Aliofkhazraei, M.; Ali, N. PVD Technology in Fabrication of Micro- and Nanostructured Coatings. In Comprehensive Materials Processing; Elsevier: Amesterdam, The Netherlands, 2014; pp. 49–84. ISBN 978-0-08-096533-8. [Google Scholar]
  64. Wang, F. Hydrothermal Synthesis of Flower-like Molybdenum Disulfide Microspheres and Their Application in Electrochemical Supercapacitors. RSC Adv. 2018, 1–10. [Google Scholar] [CrossRef] [Green Version]
  65. Choi, S.H.; Stephen, B.; Park, J.-H.; Lee, J.S.; Kim, S.M.; Yang, W.; Kim, K.K. Water-Assisted Synthesis of Molybdenum Disulfide Film with Single Organic Liquid Precursor. Sci. Rep. 2017, 7, 1983. [Google Scholar] [CrossRef] [Green Version]
  66. Kim, S.J.; Kang, M.-A.; Kim, S.H.; Lee, Y.; Song, W.; Myung, S.; Lee, S.S.; Lim, J.; An, K.-S. Large-Scale Growth and Simultaneous Doping of Molybdenum Disulfide Nanosheets. Sci. Rep. 2016, 6, 24054. [Google Scholar] [CrossRef] [Green Version]
  67. Lee, Y.; Lee, J.; Bark, H.; Oh, I.-K.; Ryu, G.H.; Lee, Z.; Kim, H.; Cho, J.H.; Ahn, J.-H.; Lee, C. Synthesis of Wafer-Scale Uniform Molybdenum Disulfide Films with Control over the Layer Number Using a Gas Phase Sulfur Precursor. Nanoscale 2014, 6, 2821. [Google Scholar] [CrossRef] [Green Version]
  68. Kim, H.; Park, T.; Leem, M.; Lee, H.; Ahn, W.; Lee, E.; Kim, H. Sulfidation Characteristics of Amorphous Nonstoichiometric Mo-Oxides for MoS2 Synthesis. Appl. Surf. Sci. 2021, 535, 147684. [Google Scholar] [CrossRef]
  69. Lin, Z.; Liu, Y.; Halim, U.; Ding, M.; Liu, Y.; Wang, Y.; Jia, C.; Chen, P.; Duan, X.; Wang, C.; et al. Solution-Processable 2D Semiconductors for High-Performance Large-Area Electronics. Nature 2018, 562, 254–258. [Google Scholar] [CrossRef]
  70. Mishra, V.; Smith, S.; Ganapathi, K.; Salahuddin, S. Dependence of Intrinsic Performance of Transition Metal Dichalcogenide Transistors on Materials and Number of Layers at the 5 Nm Channel-Length Limit. In Proceedings of the 2013 IEEE International Electron Devices Meeting, Washington, DC, USA, 9–11 December 2013; IEEE: Washington, DC, USA, 2013; pp. 5.6.1–5.6.4. [Google Scholar]
  71. Polyushkin, D.K.; Wachter, S.; Mennel, L.; Paur, M.; Paliy, M.; Iannaccone, G.; Fiori, G.; Neumaier, D.; Canto, B.; Mueller, T. Analogue Two-Dimensional Semiconductor Electronics. Nat. Electron. 2020, 3, 486–491. [Google Scholar] [CrossRef]
  72. Esmaeili-Rad, M.R.; Salahuddin, S. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector. Sci. Rep. 2013, 3, 6. [Google Scholar] [CrossRef] [Green Version]
  73. Basyooni, M.A.; Zaki, S.E.; Shaban, M.; Eker, Y.R.; Yilmaz, M. Efficient MoWO3/VO2/MoS2/Si UV Schottky Photodetectors; MoS2 Optimization and Monoclinic VO2 Surface Modifications. Sci. Rep. 2020, 10, 15926. [Google Scholar] [CrossRef]
  74. Jayachandran, D.; Oberoi, A.; Sebastian, A.; Choudhury, T.H.; Shankar, B.; Redwing, J.M.; Das, S. A Low-Power Biomimetic Collision Detector Based on an in-Memory Molybdenum Disulfide Photodetector. Nat. Electron. 2020, 3, 646–655. [Google Scholar] [CrossRef]
  75. Sanjay, S.; Sahoo, K.; Bhat, N. Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS₂ FETs. IEEE Trans. Electron Devices 2020, 67, 3711–3715. [Google Scholar] [CrossRef]
  76. Hua, Q.; Gao, G.; Jiang, C.; Yu, J.; Sun, J.; Zhang, T.; Gao, B.; Cheng, W.; Liang, R.; Qian, H.; et al. Atomic Threshold-Switching Enabled MoS2 Transistors towards Ultralow-Power Electronics. Nat. Commun. 2020, 11, 6207. [Google Scholar] [CrossRef] [PubMed]
  77. Chang, K.-P.; Wang, J.-C.; Chen, C.-H.; Li, L.-J.; Lai, C.-S. Monolayer MoS2 for Nonvolatile Memory Applications. In Proceedings of the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 25–28 October 2016; IEEE: Hangzhou, China, 2016; pp. 489–491. [Google Scholar]
  78. Yogeesh, M.; Chang, H.-Y.; Li, W.; Rahimi, S.; Rai, A.; Sanne, A.; Ghosh, R.; Banerjee, S.K.; Akinwande, D. Towards Wafer Scale Monolayer MoS2 Based Flexible Low-Power RF Electronics for IoT Systems. In Proceedings of the 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19–22 June 2016; IEEE: Newark, DE, USA, 2016; pp. 1–2. [Google Scholar]
  79. Wei, W.; Dai, Y.; Niu, C.; Huang, B. Controlling the Electronic Structures and Properties of In-Plane Transition-Metal Dichalcogenides Quantum Wells. Sci. Rep. 2015, 5, 17578. [Google Scholar] [CrossRef] [Green Version]
  80. Terrones, H.; López-Urías, F.; Terrones, M. Novel Hetero-Layered Materials with Tunable Direct Band Gaps by Sandwiching Different Metal Disulfides and Diselenides. Sci. Rep. 2013, 3, 1549. [Google Scholar] [CrossRef]
  81. Gupta, S.; Kumar, P.; Paul, T.; van Schaik, A.; Ghosh, A.; Thakur, C.S. Low Power, CMOS-MoS2 Memtransistor Based Neuromorphic Hybrid Architecture for Wake-Up Systems. Sci. Rep. 2019, 9, 15604. [Google Scholar] [CrossRef]
  82. Santosh, K.C.; Longo, R.C.; Addou, R.; Wallace, R.M.; Cho, K. Electronic Properties of MoS2/MoOx Interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts. Sci. Rep. 2016, 6, 33562. [Google Scholar] [CrossRef] [Green Version]
  83. Cui, X.; Kong, Z.; Gao, E.; Huang, D.; Hao, Y.; Shen, H.; Di, C.; Xu, Z.; Zheng, J.; Zhu, D. Rolling up Transition Metal Dichalcogenide Nanoscrolls via One Drop of Ethanol. Nat. Commun. 2018, 9, 1301. [Google Scholar] [CrossRef] [Green Version]
  84. Choi, C.; Leem, J.; Kim, M.S.; Taqieddin, A.; Cho, C.; Cho, K.W.; Lee, G.J.; Seung, H.; Bae, H.J.; Song, Y.M.; et al. Curved Neuromorphic Image Sensor Array Using a MoS2-Organic Heterostructure Inspired by the Human Visual Recognition System. Nat. Commun. 2020, 11, 5934. [Google Scholar] [CrossRef]
  85. Liu, Y.; Peng, J.; Wang, S.; Xu, M.; Gao, M.; Xia, T.; Weng, J.; Xu, A.; Liu, S. Molybdenum Disulfide/Graphene Oxide Nanocomposites Show Favorable Lung Targeting and Enhanced Drug Loading/Tumor-Killing Efficacy with Improved Biocompatibility. NPG Asia Mater. 2018, 10, e458. [Google Scholar] [CrossRef] [Green Version]
  86. Zheng, C.; Jin, X.; Li, Y.; Mei, J.; Sun, Y.; Xiao, M.; Zhang, H.; Zhang, Z.; Zhang, G.-J. Sensitive Molybdenum Disulfide Based Field Effect Transistor Sensor for Real-Time Monitoring of Hydrogen Peroxide. Sci. Rep. 2019, 9, 759. [Google Scholar] [CrossRef]
  87. Ding, X.; Peng, F.; Zhou, J.; Gong, W.; Slaven, G.; Loh, K.P.; Lim, C.T.; Leong, D.T. Defect Engineered Bioactive Transition Metals Dichalcogenides Quantum Dots. Nat. Commun. 2019, 10, 41. [Google Scholar] [CrossRef]
  88. Faramarzi, V.; Ahmadi, V.; Fotouhi, B.; Abasifard, M. A Potential Sensing Mechanism for DNA Nucleobases by Optical Properties of GO and MoS2 Nanopores. Sci. Rep. 2019, 9, 6230. [Google Scholar] [CrossRef] [Green Version]
  89. Singh, C.; Ali, M.A.; Kumar, V.; Ahmad, R.; Sumana, G. Functionalized MoS2 Nanosheets Assembled Microfluidic Immunosensor for Highly Sensitive Detection of Food Pathogen. Sens. Actuators B Chem. 2018, 259, 1090–1098. [Google Scholar] [CrossRef]
  90. Barati Farimani, A.; Heiranian, M.; Aluru, N.R. Identification of Amino Acids with Sensitive Nanoporous MoS2: Towards Machine Learning-Based Prediction. NPJ 2D Mater. Appl. 2018, 2, 14. [Google Scholar] [CrossRef]
  91. Shi, T.; Hou, X.; Guo, S.; Zhang, L.; Wei, C.; Peng, T.; Hu, X. Nanohole-Boosted Electron Transport between Nanomaterials and Bacteria as a Concept for Nano–Bio Interactions. Nat. Commun. 2021, 12, 493. [Google Scholar] [CrossRef]
  92. Zhang, W.; Zhang, P.; Su, Z.; Wei, G. Synthesis and Sensor Applications of MoS2 -Based Nanocomposites. Nanoscale 2015, 7, 18364–18378. [Google Scholar] [CrossRef]
  93. Concept for Two-Dimensional TMDs as Functional Layer for Gas Sensing Applications|VDE Conference Publication|IEEE Xplore. Available online: https://ieeexplore.ieee.org/document/9257305 (accessed on 14 March 2021).
  94. Scalable Growth of High-Quality MoS2 Film by Magnetron Sputtering: Application for NO2 Gas Sensing|IEEE Conference Publication|IEEE Xplore. Available online: https://ieeexplore.ieee.org/document/9033716 (accessed on 14 March 2021).
  95. Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing|IEEE Conference Publication|IEEE Xplore. Available online: https://ieeexplore.ieee.org/document/8937927 (accessed on 14 March 2021).
  96. Multilayer CVD-Graphene and MoS₂ Ethanol Sensing and Characterization Using Kretschmann-Based SPR|IEEE Journals & Magazine|IEEE Xplore. Available online: https://ieeexplore.ieee.org/document/9187269 (accessed on 14 March 2021).
  97. Huang, Y.; Shi, Y.; Yang, H.Y.; Ai, Y. A Novel Single-Layered MoS2 Nanosheet Based Microfluidic Biosensor for Ultrasensitive Detection of DNA. Nanoscale 2015, 7, 2245–2249. [Google Scholar] [CrossRef]
  98. Surface Plasmon Resonance (SPR) for Sensors and Biosensors-ScienceDirect. Available online: https://www.sciencedirect.com/science/article/pii/B9780323497787000060 (accessed on 13 March 2021).
  99. Rahman, M.M.; Rahman, M.S.; Rikta, K.A.; Rana, M.M.; Anower, M.S.; Paul, A.K. Promising SPR Biosensors Applying 2D Materials with α-SnSe Allotrope for Sensing Applications. In Proceedings of the 2020 IEEE Region 10 Symposium (TENSYMP); IEEE: Dhaka, Bangladesh, 2020; pp. 1197–1200. [Google Scholar]
  100. Tan, Y.; He, R.; Cheng, C.; Wang, D.; Chen, Y.; Chen, F. Polarization-Dependent Optical Absorption of MoS2 for Refractive Index Sensing. Sci Rep 2015, 4, 7523. [Google Scholar] [CrossRef] [Green Version]
  101. Mukherjee, B.; Kaushik, N.; Tripathi, R.P.N.; Joseph, A.M.; Mohapatra, P.K.; Dhar, S.; Singh, B.P.; Kumar, G.V.P.; Simsek, E.; Lodha, S. Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling. Sci. Rep. 2017, 7, 41175. [Google Scholar] [CrossRef]
  102. Chen, C.H.; Chang, X.; Wu, C.S. A novel shaped-controlled fabrication of nanopore and its applications in quantum electronics. Sci. Rep. 2019, 9, 18663. [Google Scholar] [CrossRef]
  103. Pham, T.; Li, G.; Bekyarova, E.; Itkis, M.E.; Mulchandani, A. MoS2-Based Optoelectronic Gas Sensor with Sub-Parts-per-Billion Limit of NO2 Gas Detection. ACS Nano 2019, 13, 3196–3205. [Google Scholar] [CrossRef]
  104. Kinnamon, D.; Ghanta, R.; Lin, K.-C.; Muthukumar, S.; Prasad, S. Portable Biosensor for Monitoring Cortisol in Low-Volume Perspired Human Sweat. Sci. Rep. 2017, 7, 13312. [Google Scholar] [CrossRef] [Green Version]
  105. Hwang, J.C.M. Novel Materials and Devices for Millimeter-Wave and THz Applications. In Proceedings of the 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, Nanjing, China, 18–20 September 2012; IEEE: Nanjing, China, 2012; p. 1. [Google Scholar]
  106. Jung, Y.H.; Seo, J.-H.; Zhang, H.; Lee, J.; Cho, S.J.; Chang, T.-H.; Ma, Z. Radio-Frequency Flexible and Stretchable Electronics: The Need, Challenges and Opportunities. In Proceedings of the Micro- and Nanotechnology Sensors, Systems, and Applications IX, SPIE Defense + Security, International Society for Optics and Photonics. Anaheim, CA, USA, 18 May 2017; Volume 10194, p. 101941C. [Google Scholar] [CrossRef]
  107. Dejband, E.; Karami, H.; Hosseini, M.; Torkaman, P. Switchable Abnormal THz Wave Reflector Based on Molybdenum Disulfide (MoS2). In Proceedings of the 2018 Fifth International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT), Tehran, Iran, 18–20 December 2018; IEEE: Tehran, Iran, 2018; pp. 58–61. [Google Scholar]
  108. Hijazi, A.; Moutaouakil, A.E. Graphene and MoS2 Structures for THz Applications. In Proceedings of the 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1–6 September 2019; IEEE: Paris, France, 2019; pp. 1–2. [Google Scholar]
  109. Moutaouakil, A.E.; Komori, T.; Horiike, K.; Suemitsu, T.; Otsuji, T. Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. 2010, E93.C, 1286–1289. [Google Scholar] [CrossRef]
  110. Moutaouakil, A.E. Two-Dimensional Electronic Materials for Terahertz Applications: Linking the Physical Properties with Engineering Expertise. In Proceedings of the 2018 6th International Renewable and Sustainable Energy Conference (IRSEC), Rabat, Morocco, 5–8 December 2018; pp. 1–4. [Google Scholar]
  111. Moutaouakil, A.E.; Suemitsu, T.; Otsuji, T.; Coquillat, D.; Knap, W. Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature. J. Nanosci. Nanotechnol. 2012, 12, 6737–6740. [Google Scholar] [CrossRef]
  112. Moutaouakil, A.E.; Suemitsu, T.; Otsuji, T.; Coquillat, D.; Knap, W. Room Temperature Terahertz Detection in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems. In Proceedings of the 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Rome, Italy, 5–10 September 2010; IEEE: Rome, Italy, 2010; pp. 1–2. [Google Scholar]
  113. Moutaouakil, A.E.; Watanabe, T.; Haibo, C.; Komori, T.; Nishimura, T.; Suemitsu, T.; Otsuji, T. Spectral Narrowing of Terahertz Emission from Super-Grating Dual-Gate Plasmon-Resonant High-Electron Mobility Transistors. J. Phys. Conf. Ser. 2009, 193, 012068. [Google Scholar] [CrossRef]
  114. El Moutaouakil, A.; Suemitsu, T.; Otsuji, T.; Videlier, H.; Boubanga-Tombet, S.-A.; Coquillat, D.; Knap, W. Device Loading Effect on Nonresonant Detection of Terahertz Radiation in Dual Grating Gate Plasmon-Resonant Structure Using InGaP/InGaAs/GaAs Material Systems. Phys. Status Solidi (C) 2011, 8, 346–348. [Google Scholar] [CrossRef]
  115. Cao, Y.; Gan, S.; Geng, Z.; Liu, J.; Yang, Y.; Bao, Q.; Chen, H. Optically Tuned Terahertz Modulator Based on Annealed Multilayer MoS2. Sci. Rep. 2016, 6, 22899. [Google Scholar] [CrossRef]
  116. Goel, N.; Bera, J.; Kumar, R.; Sahu, S.; Kumara, M. MoS2-PVP Nanocomposites Decorated ZnO Microsheets for Efficient Hydrogen Detection. IEEE Sens. J. 2021, 1. [Google Scholar] [CrossRef]
  117. Tran, P.D.; Tran, T.V.; Orio, M.; Torelli, S.; Truong, Q.D.; Nayuki, K.; Sasaki, Y.; Chiam, S.Y.; Yi, R.; Honma, I.; et al. Coordination Polymer Structure and Revisited Hydrogen Evolution Catalytic Mechanism for Amorphous Molybdenum Sulfide. Nat. Mater. 2016, 15, 640–646. [Google Scholar] [CrossRef] [PubMed]
  118. Balat, M. Potential Importance of Hydrogen as a Future Solution to Environmental and Transportation Problems. Int. J. Hydrog. Energy 2008, 33, 4013–4029. [Google Scholar] [CrossRef]
  119. Gao, M.-R.; Chan, M.K.Y.; Sun, Y. Edge-Terminated Molybdenum Disulfide with a 9.4-Å Interlayer Spacing for Electrochemical Hydrogen Production. Nat. Commun. 2015, 6, 7493. [Google Scholar] [CrossRef] [Green Version]
  120. Saha, D.; Kruse, P. Editors’ Choice—Review—Conductive Forms of MoS2 and Their Applications in Energy Storage and Conversion. J. Electrochem. Soc. 2020, 167, 126517. [Google Scholar] [CrossRef]
  121. Wang, Z.; Mi, B. Environmental Applications of 2D Molybdenum Disulfide (MoS2) Nanosheets. Environ. Sci. Technol. 2017, 51, 8229–8244. [Google Scholar] [CrossRef]
  122. Gao, X.; Wang, X.; Ouyang, X.; Wen, C. Flexible Superhydrophobic and Superoleophilic MoS2 Sponge for Highly Efficient Oil-Water Separation. Sci. Rep. 2016, 6, 27207. [Google Scholar] [CrossRef] [Green Version]
  123. Dey, M.; Dey, M.; Alam, S.; Das, N.K.; Matin, M.A.; Amin, N. Study of Molybdenum Sulphide as a Novel Buffer Layer for CZTS Solar Cells. In Proceedings of the 2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT), Dhaka, Bangladesh, 22–24 September 2016; IEEE: Dhaka, Bangladesh, 2016; pp. 1–4. [Google Scholar]
  124. Iqbal, M.Z.; Nabi, J.; Siddique, S.; Awan, H.T.A.; Haider, S.S.; Sulman, M. Role of Graphene and Transition Metal Dichalcogenides as Hole Transport Layer and Counter Electrode in Solar Cells. Int. J. Energy Res. 2020, 44, 1464–1487. [Google Scholar] [CrossRef]
  125. Capasso, A.; Del Rio Castillo, A.E.; Najafi, L.; Pellegrini, V.; Bonaccorso, F.; Matteocci, F.; Cina, L.; Di Carlo, A. Spray Deposition of Exfoliated MoS2 Flakes as Hole Transport Layer in Perovskite-Based Photovoltaics. In Proceedings of the 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, 27–30 July 2015; IEEE: Rome, Italy, 2015; pp. 1138–1141. [Google Scholar]
  126. Xu, H.; Xin, L.; Liu, L.; Pang, D.; Jiao, Y.; Cong, R.; Yu, W. Large Area MoS2/Si Heterojunction-Based Solar Cell through Sol-Gel Method. Mater. Lett. 2019, 238, 13–16. [Google Scholar] [CrossRef]
  127. Liang, M.; Ali, A.; Belaidi, A.; Hossain, M.I.; Ronan, O.; Downing, C.; Tabet, N.; Sanvito, S.; EI-Mellouhi, F.; Nicolosi, V. Improving Stability of Organometallic-Halide Perovskite Solar Cells Using Exfoliation Two-Dimensional Molybdenum Chalcogenides. NPJ 2D Mater. Appl. 2020, 4, 40. [Google Scholar] [CrossRef]
  128. Huang, Y.; Wang, Y.; Zhang, X.; Lai, F.; Sun, Y.; Li, Q.; Wang, H. N-Doped Carbon@nanoplate-Assembled MoS2 Hierarchical Microspheres as Anode Material for Lithium-Ion Batteries. Mater. Lett. 2019, 243, 84–87. [Google Scholar] [CrossRef]
  129. Bao, W.; Cai, X.; Kim, D.; Sridhara, K.; Fuhrer, M.S. High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects. Appl. Phys. Lett. 2013, 102, 042104. [Google Scholar] [CrossRef] [Green Version]
  130. Kramer, A.; Van de Put, M.L.; Hinkle, C.L.; Vandenberghe, W.G. Tellurium as a Successor of Silicon for Extremely Scaled Nanowires: A First-Principles Study. NPJ 2D Mater. Appl. 2020, 4, 10. [Google Scholar] [CrossRef]
  131. Manzeli, S.; Ovchinnikov, D.; Pasquier, D.; Yazyev, O.V.; Kis, A. 2D Transition Metal Dichalcogenides. Nat. Rev. Mater 2017, 2, 17033. [Google Scholar] [CrossRef]
  132. Cao, W.; Kang, J.; Sarkar, D.; Liu, W.; Banerjee, K. 2D Semiconductor FETs—Projections and Design for Sub-10 Nm VLSI. IEEE Trans. Electron Devices 2015, 62, 3459–3469. [Google Scholar] [CrossRef]
  133. Wang, H.; Li, C.; Fang, P.; Zhang, Z.; Zhang, J.Z. Synthesis, Properties, and Optoelectronic Applications of Two-Dimensional MoS2 and MoS2-Based Heterostructures. Chem. Soc. Rev. 2018, 47, 6101–6127. [Google Scholar] [CrossRef]
  134. Stroud, A.; Derosa, P.A.; Leuty, G.; Muratore, C.; Berry, R.; Muratory, C. Effects of Impurities and Lattice Imperfections on the Conductive Properties of MoS2. In Proceedings of the 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, 27–30 July 2015; IEEE: Rome, Italy, 2015; pp. 613–616. [Google Scholar]
  135. Yu, S.; Wu, X.; Wang, Y.; Guo, X.; Tong, L. 2D Materials for Optical Modulation: Challenges and Opportunities. Adv. Mater. 2017, 29, 1606128. [Google Scholar] [CrossRef]
  136. Chen, X.; Shinde, S.M.; Dhakal, K.P.; Lee, S.W.; Kim, H.; Lee, Z.; Ahn, J.-H. Degradation Behaviors and Mechanisms of MoS2 Crystals Relevant to Bioabsorbable Electronics. NPG Asia Mater. 2018, 10, 810–820. [Google Scholar] [CrossRef] [Green Version]
  137. Shree, S.; Paradisanos, I.; Marie, X.; Robert, C.; Urbaszek, B. Guide to Optical Spectroscopy of Layered Semiconductors. Nat. Rev. Phys. 2021, 3, 39–54. [Google Scholar] [CrossRef]
  138. Peng, Z.; Chen, X.; Fan, Y.; Srolovitz, D.J.; Lei, D. Strain Engineering of 2D Semiconductors and Graphene: From Strain Fields to Band-Structure Tuning and Photonic Applications. Light. Sci. Appl. 2020, 9, 190. [Google Scholar] [CrossRef]
  139. Fan, X.; Zheng, W.T.; Kuo, J.-L.; Singh, D.J. Structural Stability of Single-Layer MoS2 under Large Strain. J. Phys. Condens. Matter 2015, 27, 105401. [Google Scholar] [CrossRef]
  140. Kumar, P.; Horwath, J.P.; Foucher, A.C.; Price, C.C.; Acero, N.; Shenoy, V.B.; Stach, E.A.; Jariwala, D. Direct Visualization of Out-of-Equilibrium Structural Transformations in Atomically Thin Chalcogenides. NPJ 2D Mater. Appl. 2020, 4, 16. [Google Scholar] [CrossRef]
  141. Kaur, J.; Singh, M.; Dell‘Aversana, C.; Benedetti, R.; Giardina, P.; Rossi, M.; Valadan, M.; Vergara, A.; Cutarelli, A.; Montone, A.M.I.; et al. Biological Interactions of Biocompatible and Water-Dispersed MoS2 Nanosheets with Bacteria and Human Cells. Sci. Rep. 2018, 8, 16386. [Google Scholar] [CrossRef]
  142. Wu, B.; Chen, L.; Wu, X.; Hou, H.; Wang, Z.; Liu, S. Differential Influence of Molybdenum Disulfide at the Nanometer and Micron Scales in the Intestinal Metabolome and Microbiome of Mice. Environ. Sci. Nano 2019, 6, 1594–1606. [Google Scholar] [CrossRef]
Figure 1. Different coordination and stacking sequences of the three MoS2 structures 1T, 2H and 3R. Reproduced from [33]. Published by The Royal Society of Chemistry.
Figure 1. Different coordination and stacking sequences of the three MoS2 structures 1T, 2H and 3R. Reproduced from [33]. Published by The Royal Society of Chemistry.
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Figure 2. Different MoS2 synthesis techniques [27].
Figure 2. Different MoS2 synthesis techniques [27].
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Figure 3. Optical application of MoS2. Curved neuromorphic imaging device inspired by the human visual recognition system. (a) Human visual recognition system (b) Curved neuromorphic imaging device (c) Block diagram of conventional imaging system (d) Proposed Curved neuromorphic imaging system. Reproduced from [84]. Springer Nature 2020.
Figure 3. Optical application of MoS2. Curved neuromorphic imaging device inspired by the human visual recognition system. (a) Human visual recognition system (b) Curved neuromorphic imaging device (c) Block diagram of conventional imaging system (d) Proposed Curved neuromorphic imaging system. Reproduced from [84]. Springer Nature 2020.
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Figure 4. The effect of different complexes in killing cancer cells in mice lungs. Adapted from [85]. Springer Nature 2018.
Figure 4. The effect of different complexes in killing cancer cells in mice lungs. Adapted from [85]. Springer Nature 2018.
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Figure 5. MoS2/RGO FET for detecting H2O2, (a) Transfer characteristics for MoSs/RGO FET, Drain current versus gate voltage for MoS2/RGO and RGO FETs (b) Drain current versus source-drain voltage for MoS2/RGO, (c) The change in drain-source current for different concentrations of H2O2 (d) Negligible current change for different interferents (PBS, 1 mM AA, 1 mM UA, 1 mM Glu, 1 mM GLY, 1 mM NE, 1 mM L-GA) and a noticeable change for H2O2. Adapted from [86]. Springer Nature 2019.
Figure 5. MoS2/RGO FET for detecting H2O2, (a) Transfer characteristics for MoSs/RGO FET, Drain current versus gate voltage for MoS2/RGO and RGO FETs (b) Drain current versus source-drain voltage for MoS2/RGO, (c) The change in drain-source current for different concentrations of H2O2 (d) Negligible current change for different interferents (PBS, 1 mM AA, 1 mM UA, 1 mM Glu, 1 mM GLY, 1 mM NE, 1 mM L-GA) and a noticeable change for H2O2. Adapted from [86]. Springer Nature 2019.
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Figure 6. Illustrative diagram of different sensing applications of MoS2. Enhanced plasmonic resonance array [101], DNA sensing using MoS2 nanopores [88,102], photodetector for biomedical imaging [72], refractive index sensing [100], gas sensing FET [103], Electrochemical biosensor for measuring cortisol in human sweat [104].
Figure 6. Illustrative diagram of different sensing applications of MoS2. Enhanced plasmonic resonance array [101], DNA sensing using MoS2 nanopores [88,102], photodetector for biomedical imaging [72], refractive index sensing [100], gas sensing FET [103], Electrochemical biosensor for measuring cortisol in human sweat [104].
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Figure 7. Illustrative diagram of challenges facing MoS2.
Figure 7. Illustrative diagram of challenges facing MoS2.
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Table 1. Comparison between different MoS2 structures.
Table 1. Comparison between different MoS2 structures.
1T2H3R
Structure CoordinationOctahedralTrigonal PrismaticTrigonal Prismatic
Lattice parametersa = 5.60 A, c = 5.99 A
and an edge sharing octahedral [34]
a = 3.15 A, c = 12.30 A [34]a = 3.17 Å, c = 18.38 A [34]
propertyparamagnetic and metallicSemiconducting
Electrical conductivity105 times higher than 2H phaseLow (~0.1 S/m)
Absorption peaks No peaks at 604 nm and 667 nmShowed peaks at 604 nm and 667 nm
Common applicationsIntercalation in chemistryDry lubricantsDry lubricants and non-linear optical devices
Table 2. Comparison between Bulk and monolayer MoS2.
Table 2. Comparison between Bulk and monolayer MoS2.
BulkMonolayer
BandgapIndirect (~1.2 eV)Direct (1.8 eV)
Binding energy0.1 eV1.1 eV
Photoluminescence intensitiesbetween 10−5 and 10−6104 times higher than that of bulk, up to and up to 4 × 10−3
Table 3. Summary of synthesis techniques.
Table 3. Summary of synthesis techniques.
TechniqueCharecteristics of the Obtained MoS2 SheetsPublisherYearReference
Using aerogelA rapid synthesis technique for TMDs- carbon aerogel composites to be used in supercapacitor. The preparation time is 30 min which is approximately 2% of typical aerogel techniques that take 24 hNature2017[58]
Liquid assisted SonicationStudied the PL, Raman analysis resulting from bath and probe sonication synthesis Elsevier2020[59]
Liquid exfoliation & ultrasonic cavitationObtain less defective and high concentration nanosheets in a short timeNature 2014[60]
Exfoliation of & Ultrasound Sonication in Supercritical Co2Exfoliation efficiency > 90%Springer2019[61]
Exfoliation & sonicationMobility = 10 cm2/V, on/off ratios = 106Nature2018[69]
ALD & thermal evaporationEnhanced electrical conductivityNature2016[66]
CVD & liquid precursorThe method uses water to remove impurities like carbon and sulphur. It ensures full coverage of MoS2 for the substrateNature2017[65]
ALD & thermal evaporationThe carrier density and conductivity of MoS2 are adjusted according to the thickness of the metalloporphyrin layer used.
Produce large scale MoS2 nanosheets
Nature2016[66]
Self propagation of Mo poweder and elementary SulfurResulted MoS2 nanosheets have thermal stability up to 400 °C.IEEE2013[18]
CVD with Sulfur as a precursor
(Sulfidation)
on/off current ratio of 105, a mobility of 0.12 cm2/V·s
(mean mobility value of 0.07 cm2 /V·s
Royal society of chemistry2014[67]
SulfidationThe on/off ratio of 103–104 and electron mobility of 10−4 cm2/V·sElsevier2020[68]
Intercalation & exfoliationTo be used in high-performance
thin-film transistors, on/off ratio of 106 and electron mobility of 10 cm2/V·s
Springer Nature2018[69]
Table 4. Summary of sensing applications.
Table 4. Summary of sensing applications.
CategeoryApplicationMoS2 PropertyReference
OptoelectronicsPhotosensing (photodetector)Electronic and optical properties[72]
Photosensing (photodetector)[73]
Photosensing (photodetector)[74]
Recognition systems and IoTImage sensorsOptical properties[84]
Medical
(bio-sensing)
Cancer sensingPL property[86]
Cancer sensingPL property[23]
Cancer sensingPL property[21]
DNA sensingMoS2 nanopores[88]
DNA sensingdye quenching property[97]
Amino acids sensingMoS2 nanopores[90]
Immunosensors Electrochemical and optical properties[89]
Table 5. Summary of MoS2 application.
Table 5. Summary of MoS2 application.
ApplicationCategeoryDescriptionPublisherYearReference
ElectronicsAnalogueDeveloping a 2D MoS2 field-effect transistors (FETs) to be used as operational amplifierNature2020[71]
ElectronicsCMOSEnhanced back gate MoS2 FETs using Sulfur treatment, gate length from 500 to 80 nm, contact resistance = 1.3 kΩIEEE2020[75]
Electronicsnonvolatile memoryNVMHystresses and capacitance of MoS2 NVM with 9nm and 15 nm blocking oxide layer of SiO2 is investigated. The device has largest hystresses window. And can store both electrons and holesIEEE2016[77]
ElectronicsPower electronicsUltra low power transistor of SS ~4.5 mm/decade and steep on/off characteristics Nature2020[76]
ElectronicsoptoelectronicsDeveloping a highly-efficient and fast photodetector using amorphous silicon and MoS2Nature2013[72]
ElectronicsoptoelectronicsEfficient photodetector with photocurrent gain of 1.6, specific detectivity of 4.32 × 108 Jones and quantum efficiency ~1.0 × 1010 at 365 nmNature2020[73]
ElectronicsoptoelectronicsA nanoscale photodetector, energy efficient (consumes from 1 to 1000 nanojoules), and has a small fingerprint of (~1 μm × 5 μm).Nature2020[74]
ElectronicsImage sensorsA MoS2-organic heterostructure image sensor similar to human vision system using simple design. The output has less noise and without redundant input dataNature2020[84]
MedicalCancer cureUsing MoS2/GO nanocomposites to cure lung cancer in miceNature2018[85]
MedicalCancer cureUsing defect engineering (Sulfur defects) in MoS2 quantum dots to kill cancer cells. The Sulfur defects increased oxidation strees and was able to inhibit cancer growth cellsNature2019[87]
MedicalCancer detecctionA real-time MoS2 FET sensor to detect H2O2 in biological cellsNature2019[86]
MedicalCancer detecctionMoS2 nanosheet fluorescent
biosensor for detecting prostate antigen. A 20 μg/mL of MoS2 nanosheets quenched up to 97% of the dye
Springer2014[23]
MedicalCancer detecctionDetecting breast cancer based on PL property of MoS2. A redshift of 16 nm takes place for miRNA21c (a cancer biomarker)Nature2020[21]
MedicalDNA detectionSensing DNA nucleobases using MoS2 nanopores. Molar absorption of MoS2 nanopore of 0.65 nm thick, and lengths 2 nm, 3 nm, 5 nm.Nature2019[88]
MedicalDNA detectionDetecting DNA based on dye quenching property of MoS2. The device has linear
range (0 to 50 nM), and a detection limit = 500 pM
Royal Scociety of chemistry2015[97]
MedicalAmino acid detectionUsing MoS2 nanopores and machine learning to detect ionic current and residence time of 20 different amino acids with accuracy range 72.45% to 99.6%Nature2018[90]
MedicalMicrofluidic immunosensorUse of MoS2 nanosheets on microfluidic electrodes to detect Salmonella typhimurium (S.typhimurium)
sensitivity = 1.79 kΩ/(CFU/mL.cm2)
detection limit = 1.56 CFU/mL
detection range = 10–107 CFU/mL.
Elsevier2017[89]
MedicalAntibacterial materialsUsing nanohole enriched MoS2 to destroy bacteria. MoS2 concentration used is 4 μg/mL. It has affinity response with biofilms of 14.71 nM, 1.3-fold > 11.44 nM obtained for pristine
MoS2
Verified in vitro and viro
Nature2021[91]
EnergySolar cellsUsing MoS2 as a buffer in solar cells to enhance efficiency and stabilityIEEE2016[123]
EnergySolar cellsUsing MoS2 as a hole transport layer in solar cells a peak at 404 cm−1, at 200 °C, and
two more peaks at at 380 and 404 cm−1, at 300 °C,
Wiley2019[124]
EnergySolar cellsMoS2 as a transport layer in perovskite solar cells
PCE (η) = 3.9% compared to other cells of
(η = 3.1%). High stability for 800-hour shelf life
(ΔPCE/PCE = −17%) when compared to other cells of (ΔPCE/PCE = −45%).
IEEE2015[125]
EnergySolar cellsUsing MoS2/Si heterojunction in solar cells to enhance conversion efficiency from 1.1% to 4.6%.Elsevier2018[126]
EnergySolar cellsEnhancing organometallic-halide perovskite solar using MoS2 as a buffer Cells (PCE) = 14.9%, and maintaing 93.1% of its PCE after 1 hourNature2020[127]
Energylithium-ion batteriesUsing MoS2 as as anode material for lithium-ion batteries.It has capacity of 1103.6 mAh/g and maintains a reversible capacity of 786.4 mAh/g after 50 cycles at 0.1 A/gElsevier2019[128]
THz applicationsTHz wave reflectorSwitchable THz wave reflector made of MoS2, SiO2, and gold layers.
reflection phase ranges from 0 to 2π linear phase shift according to the geometric dimension
IEEE2018[107]
THz applicationsTHz modulatorTerahertz modulator of multilayer-MoS2 on Silicon (MOS). Moudulation efficiency of annealed MOS is higher that that of graphene over Silicon and graphene metamaterialsNature2016[115]
OtherHydrogen detectionMoS2-PVP (Polyvinyl pyridine) nanocomposite with ZnO to detect hydrogen. A 5 mg/mL sensor has 8 times better ensing than pristine ZnOIEEE2021[116]
Other Hydrogen generation coordination polymer based on [Mo3S13]2−
clusters from amorphous MoS2 to be used in hydrogen evolution reactions.
Nature 2016[117]
OtherHydrogen generationA edge-terminated and interlayer-expanded MoS2 catalyst fabricated using a microwave heating strategy. The proposed structure has the highest hydrogen evolution activity and best stabilityNature2015[118]
OtherOil separation from waterMoS2 Sponge to absorb oil from water. Simple fabrication and easy scaling up. Nature2016[122]
Table 6. Summary of challenges facing MoS2.
Table 6. Summary of challenges facing MoS2.
ChallengeDescriptionPublisherYearReference
PropertiesEffect of lattice imperfections and atomic vacancies on density of states and electron-hole transportIEEE2015[134]
PropertiesDegradation behavior of MoS2 crystalsNPG Asia Materials2018[136]
Propertiesstructural transformations in MoS2 thin layers under high temperature Nature2020[140]
ElectronicsSub 10 nm FETs challenges and Strain effectsIEEE2015[132]
OptoelectronicsOptical modulation challenges and laser damageAdvanced Materials2017[135]
Optoelectronicsoptical spectroscopy for MoS2 layers, the absorption and emission behavior and how to tune themNature2021[137]
OptoelectronicsStrain engineering to develop optical properties and using it in photonics applicationsNature2020[138]
OptoelectronicsFailure mechanisms of monolayer MoS2 under large strainJournal of physics2015[139]
Biomedical (biocompatibility)Cytotoxic effect of MoS2 when used to cure cancer cellsNature2018[141]
Biomedical (biocompatibility)Effect of nano-MoS2 on mice intestine where it caused intestinal inflation and changes in the metabolism and the microbiotaRoyal Society of chemistry2019[142]
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Samy, O.; Zeng, S.; Birowosuto, M.D.; El Moutaouakil, A. A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges. Crystals 2021, 11, 355. https://doi.org/10.3390/cryst11040355

AMA Style

Samy O, Zeng S, Birowosuto MD, El Moutaouakil A. A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges. Crystals. 2021; 11(4):355. https://doi.org/10.3390/cryst11040355

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Samy, Omnia, Shuwen Zeng, Muhammad Danang Birowosuto, and Amine El Moutaouakil. 2021. "A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges" Crystals 11, no. 4: 355. https://doi.org/10.3390/cryst11040355

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